M29F200FT55M3F2 vs M29F200FB55M3E2 对比

详细并排对比 M29F200FT55M3F2 出自 Micron Technology 和 M29F200FB55M3E2 出自 Micron Technology。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Micron Technology
M29F200FT55M3F2 M29F200FT55M3F2 - 2Mbit 55ns 5V NOR Flash | Micron | Automotive

M29F200FT55M3F2 - 2Mbit 55ns 5V NOR Flash | Micron | Automotive

M29F200FT55M3F2 ✓ 量产中
Micron Technology
M29F200FB55M3E2 M29F200FB55M3E2 - 2Mbit 55ns NOR Flash 5V 44-SO | Micron

M29F200FB55M3E2 - 2Mbit 55ns NOR Flash 5V 44-SO | Micron

M29F200FB55M3E2 ✗ 停产

规格对比

参数 M29F200FT55M3F2 M29F200FB55M3E2
品牌 Micron Technology Micron Technology
分类 Memory ICs Memory ICs
生命周期状态 有效 停产
库存状态 有库存 有库存
单价(USD) $1.85 $0.00
存储器类型 Parallel NOR Flash Flash - NOR Memory IC
Density 2 Mbit (2097 kbits) 2097 kbits (2 Mbit)
存储组织 256K x 8 / 128K x 16 128K x 16 bits
Access Time 55 ns 55 ns
Supply Voltage (VCC) 5 V 5 V
Boot Block Architecture Top Boot Block Bottom Boot Block
Programming Interface Embedded program/erase controller, byte or word —
工作温度 -40C to +125C -40C to +125C
Automotive Qualification Yes —
封装 44-pin SO (TSOP) —
安装类型 Surface Mount Surface Mount
Packaging Tape & Reel (T/R) —
Number of Words (x16 mode) 128 K —
Bits per Word (x16 mode) 16 bits —
RoHS 状态 [DATA_NEEDED: RoHS status] [DATA_NEEDED: RoHS status]
Program/Erase Endurance [DATA_NEEDED: program/erase cycles] —
Number of Words — 128 k
Bits per Word — 16 bits
接口 — Parallel
Program / Erase Controller — Embedded byte/word program algorithms
Package Type — 44-SO (SOP44)
品牌 — Micron Technology Inc.
Programming Voltage — [DATA_NEEDED: program/erase supply voltage]
Sector Organization — [DATA_NEEDED: sector/erase block organization]
Endurance — [DATA_NEEDED: program/erase cycles]

数据手册与资源

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