M29F200FT55N3F2 vs M29F200FB55N3F2 对比

详细并排对比 M29F200FT55N3F2 出自 Micron Technology 和 M29F200FB55N3F2 出自 Micron Technology。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Micron Technology
M29F200FT55N3F2 M29F200FT55N3F2 - 2Mbit 55ns 5V NOR Flash | Micron

M29F200FT55N3F2 - 2Mbit 55ns 5V NOR Flash | Micron

M29F200FT55N3F2 ✓ 量产中
Micron Technology
M29F200FB55N3F2 M29F200FB55N3F2 - 2Mbit 5V NOR Flash 55ns 48-TSOP | Micron

M29F200FB55N3F2 - 2Mbit 5V NOR Flash 55ns 48-TSOP | Micron

M29F200FB55N3F2 ✓ 量产中

规格对比

参数 M29F200FT55N3F2 M29F200FB55N3F2
品牌 Micron Technology Micron Technology
分类 Memory ICs Memory ICs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.00 $4.20
存储器类型 NOR Flash, Parallel Parallel NOR Flash
Density 2 Mbit (2097 kbits) 2 Mbit (2097 kbits)
存储组织 256K x 8-bit / 128K x 16-bit 256K x 8 bit / 128K x 16 bit
Supply Voltage (VCC) 5 V 5 V
Access Time 55 ns 55 ns
Number of Words 128 K 128 K (x16 mode)
Bits per Word 16 bits 16 bits
Boot Block Architecture Top Boot Block Bottom Boot Block (FB)
Program/Erase Embedded byte/word program algorithms —
工作温度 -40C to +125C -40C to +125C
封装 48-pin TSOP 48-TSOP I
安装类型 Surface Mount Surface Mount
接口 Parallel, BYTE pin selects 8/16-bit bus Parallel
Packaging Tape & Reel (TR suffix) Tape & Reel (TR)
RoHS 状态 [DATA_NEEDED: RoHS status] [DATA_NEEDED: RoHS compliance status]
MSL 等级 [DATA_NEEDED: moisture sensitivity level] —
Programming — Embedded byte/word program algorithm
Erase — Embedded block erase controller
Endurance — [DATA_NEEDED: program/erase cycles]

数据手册与资源

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