M29F400FB55M3F2 vs M29F400FT55N3F2 对比

详细并排对比 M29F400FB55M3F2 出自 Micron Technology 和 M29F400FT55N3F2 出自 Micron Technology。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Micron Technology
M29F400FB55M3F2 M29F400FB55M3F2 - 4Mbit 5V NOR Flash 55ns | Micron

M29F400FB55M3F2 - 4Mbit 5V NOR Flash 55ns | Micron

M29F400FB55M3F2 ✓ 量产中
Micron Technology
M29F400FT55N3F2 M29F400FT55N3F2 - 4Mbit 5V Parallel NOR Flash 55ns | Micron

M29F400FT55N3F2 - 4Mbit 5V Parallel NOR Flash 55ns | Micron

M29F400FT55N3F2 ✓ 量产中

规格对比

参数 M29F400FB55M3F2 M29F400FT55N3F2
品牌 Micron Technology Micron Technology
分类 Memory ICs EEPROM
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $1.72 $1.51
存储器类型 NOR Flash, Parallel NOR Flash (SLC)
Density 4194 kbits (4 Mbit) —
存储组织 512K x 8 / 256K x 16 256K x 16
Access Time 55 ns 55 ns
Supply Voltage (VCC) 5 V —
Boot Block Position Bottom boot block —
工作温度 -40C to +125C [DATA_NEEDED: min operating temperature]
Grade Automotive (Auto Grade, 125C) —
Package Type 44-pin SO (SOP), wide body —
安装类型 Surface Mount Surface Mount
Programming Embedded byte/word program algorithm —
Erase Embedded program/erase controller, block erase —
Packaging Tape and Reel (TR) —
RoHS 状态 RoHS-compliant package (F2 suffix) —
Bus Width 8-bit or 16-bit (selectable) —
引脚数 44 —
存储容量 — 4 Mbit
接口 — Parallel
电源电压 — 5 V
Block Architecture — Top boot block
封装 — 44-SO (SOP-44)
Temperature Grade — Auto Grade 3, up to +125C (per Micron ordering code)
Compliance Suffix — F2 (RoHS-compliant, lead-free plating)
Programming Voltage — Single supply (no 12 V VPP required)
Technology — Floating-gate NOR cell, charge-pump program/erase
Max Standby Current — [DATA_NEEDED: standby current]
Program/Erase Endurance — [DATA_NEEDED: endurance cycles]

数据手册与资源

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