M29F400FT55N3E2 vs M29F800FT55N3E2 对比
详细并排对比 M29F400FT55N3E2 出自 Micron Technology 和 M29F800FT55N3E2 出自 Micron Technology。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Micron Technology
M29F400FT55N3E2 - 4Mbit 5V Parallel NOR Flash, 55ns | Micron
M29F400FT55N3E2 ✓ 量产中
规格对比
| 参数 | M29F400FT55N3E2 | M29F800FT55N3E2 |
|---|---|---|
| 品牌 | Micron Technology | Micron Technology |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $4.15 | $4.98 |
| 存储器类型 | NOR Flash (Parallel) | NOR Flash |
| Density | 4 Mbit (512K x 8) | 8389 kbits |
| Access Time | 55 ns | 55 ns |
| 电源电压 | 5 V (single supply) | 5 V |
| 接口 | Parallel | Parallel |
| Boot Block Architecture | Top boot (FT variant) | Top Boot Block |
| 封装 | 44-SO (SOP-44) | 48-TSOP I |
| 安装类型 | Surface Mount | Surface Mount |
| Programming Supply | No 12 V VPP required (5.0 V programming) | — |
| Command Set | JEDEC standard compatible | — |
| 工作温度 | [DATA_NEEDED: Operating Temperature Range] | -40C to +125C |
| Program/Erase Endurance | [DATA_NEEDED: Program/Erase Cycles] | 100,000 cycles per block (typical for family) |
| Data Retention | [DATA_NEEDED: Data Retention] | >20 years (typical for family) |
| Active Read Current | [DATA_NEEDED: Active Current] | — |
| Standby Current | [DATA_NEEDED: Standby Current] | — |
| Block Protection | Hardware block protection | — |
| MSL 等级 | [DATA_NEEDED: Moisture Sensitivity Level] | — |
| RoHS 状态 | [DATA_NEEDED: RoHS Status] | Compliant (E suffix = lead-free/RoHS) |
| Memory Organization | — | 512K x 16 (8 Mbit) |
| Word/Byte Configuration | — | BYTE# pin selectable (16-bit / 8-bit) |
| Hardware Reset / Power-Down | — | RP# pin |
| Embedded Program/Erase Controller | — | Yes (byte/word program, block erase) |
| Ready/Busy Output | — | Yes |