M29F800FB55N3F2 vs M29F800FB55N3E2 对比

详细并排对比 M29F800FB55N3F2 出自 Micron Technology 和 M29F800FB55N3E2 出自 Micron Technology。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Micron Technology
M29F800FB55N3F2 M29F800FB55N3F2 - 8Mbit 5V Parallel NOR Flash 55ns | Micron

M29F800FB55N3F2 - 8Mbit 5V Parallel NOR Flash 55ns | Micron

M29F800FB55N3F2 ✓ 量产中
Micron Technology
M29F800FB55N3E2 M29F800FB55N3E2 - 8Mb 5V 55ns NOR Flash TSOP-48 | Micron

M29F800FB55N3E2 - 8Mb 5V 55ns NOR Flash TSOP-48 | Micron

M29F800FB55N3E2 ✓ 量产中

规格对比

参数 M29F800FB55N3F2 M29F800FB55N3E2
品牌 Micron Technology Micron Technology
分类 Memory ICs EEPROM
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $2.47 $3.83
Memory Density 8389 kbits (8 Mbit) —
存储组织 1M x 8 / 512K x 16 Bottom boot (B suffix)
电源电压 5 V —
Access Time 55 ns 55 ns
接口类型 Parallel NOR —
Boot Block Architecture Bottom Boot Block —
Program/Erase Controller Embedded byte/word program algorithms —
工作温度 -40C to +125C Up to +125 C (Auto Grade 3 suffix)
Temperature Grade Automotive (AEC-Q100) —
Package Type 48-pin TSOP1 —
Package Shape Rectangular (JESD designation TSOP1) —
Terminal Count 48 —
JESD-609 Termination Code e3 (lead-free) —
安装类型 Surface Mount Surface Mount (SMD/SMT)
Packaging Tape & Reel (T/R) —
RoHS 状态 Compliant (lead-free terminations) Compliant (E suffix)
存储容量 — 8 Mbit (1 M x 8 / 512 K x 16)
存储器类型 — NOR Flash, SLC, Parallel
Supply Voltage Min — 4.5 V
Supply Voltage Max — 5.5 V
接口 — Parallel
数据总线宽度 — 8-bit or 16-bit (BYTE# selectable)
封装 — 48-pin TSOP Type I (N suffix)
Packing — Tray (blank suffix)
Programming Operations — READ, ERASE, PROGRAM via command set
Write Protection — Block protection with lockable boot block
Status Output — RB# (Ready/Busy)

数据手册与资源

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