M29W064FB70N3F vs M29W064FT70N3E 对比

详细并排对比 M29W064FB70N3F 出自 Micron Technology 和 M29W064FT70N3E 出自 Micron Technology。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Micron Technology
M29W064FB70N3F M29W064FB70N3F - 64Mb NOR Flash 70ns AEC-Q100 | Micron Technology

M29W064FB70N3F - 64Mb NOR Flash 70ns AEC-Q100 | Micron Technology

M29W064FB70N3F Obsolete
Micron Technology
M29W064FT70N3E M29W064FT70N3E - 64Mb 3V Parallel NOR Flash 70ns | Micron

M29W064FT70N3E - 64Mb 3V Parallel NOR Flash 70ns | Micron

M29W064FT70N3E ✓ 量产中

规格对比

参数 M29W064FB70N3F M29W064FT70N3E
品牌 Micron Technology Micron Technology
分类 Memory ICs Memory ICs
生命周期状态 Obsolete 有效
库存状态 有库存 有库存
单价(USD) $1.20 $0.00
存储器类型 NOR Flash, Parallel NOR Flash (Parallel)
Density 64 Mbit 64 Mbit
存储组织 8M x8 / 4M x16 8 Mb x8 or 4 Mb x16
电源电压 2.7 V to 3.6 V 2.7 V to 3.6 V
Access Time 70 ns 70 ns
接口 Parallel, x8/x16 selectable (BYTE#) Parallel, CFI compliant
Boot Block Configuration Bottom boot block (FB) —
工作温度 -40C to +125C -40C to +85C
Automotive Qualification AEC-Q100 qualified —
封装 48-TSOP 48-TSOP
安装类型 Surface Mount Surface Mount
Packaging Tape & Reel (TR suffix) —
Status Polling RY/BY# hardware pin + data polling —
Erase/Program Interface Command set (M29W family compatible) —
RoHS 状态 Compliant (F suffix) [DATA_NEEDED: RoHS compliance status]
Part Status Obsolete —
Boot Block Architecture — Top boot block (FT)
Programming Voltage — Single 3 V supply (no separate VPP required)
Erase/Program Method — Command-set page programming, block erase
Product Longevity Program — No
Program/Erase Cycles — [DATA_NEEDED: program/erase endurance cycles]
Active Read Current — [DATA_NEEDED: active read supply current]
Standby Current — [DATA_NEEDED: standby current]

数据手册与资源

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