M29W160EB70N3F vs M29W160FB70N3E 对比

详细并排对比 M29W160EB70N3F 出自 Micron Technology 和 M29W160FB70N3E 出自 Micron Technology。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Micron Technology
M29W160EB70N3F M29W160EB70N3F - 16Mbit NOR Flash, 70ns, 48-TSOP | Micron

M29W160EB70N3F - 16Mbit NOR Flash, 70ns, 48-TSOP | Micron

M29W160EB70N3F ✓ 量产中
Micron Technology
M29W160FB70N3E M29W160FB70N3E - 16Mb 3V Parallel NOR Flash 70ns | Micron

M29W160FB70N3E - 16Mb 3V Parallel NOR Flash 70ns | Micron

M29W160FB70N3E ✓ 量产中

规格对比

参数 M29W160EB70N3F M29W160FB70N3E
品牌 Micron Technology Micron Technology
分类 Memory ICs Memory ICs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $1.01 $3.58
存储器类型 FLASH - NOR FLASH - NOR
存储容量 16 Mbit (2M x8 / 1M x16) 16 Mbit (2M x8 / 1M x16)
Access Time 70 ns 70 ns
接口 Parallel (Byte/Word-wide) Parallel
Supply Voltage (VCC) 2.7 V to 3.6 V 3.0 V to 3.6 V
Programming Time 10 us per byte/word (typical) —
Boot Block Position Bottom boot block —
Bus Configuration x8 / x16 selectable (BYTE# pin) x8 / x16 selectable (BYTE# pin)
封装 / 外壳 48-TSOP (0.724 in, 18.40 mm width) 48-TFSOP (0.724 in, 18.40 mm width)
安装类型 Surface Mount Surface Mount
Packaging Tape & Reel Tray
Qualification Automotive, AEC-Q100 —
Erase Architecture Block erase (boot block + main blocks) —
Common Flash Interface Yes (CFI compliant) —
Reset Input RESET# hardware reset pin —
工作温度 [DATA_NEEDED: operating temperature range] [DATA_NEEDED: operating temperature range]
MSL 等级 [DATA_NEEDED: moisture sensitivity level] —
Programming Voltage — Single supply (no separate VPP required)
Architecture — Boot block
Program/Erase Endurance — [DATA_NEEDED: program/erase cycles]
Data Retention — [DATA_NEEDED: data retention]
Status Output — Data polling / toggle bit
Block Protection — Yes (boot block protection)

数据手册与资源

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