M29W400FT55N3E vs M29W800FT70N3E 对比
详细并排对比 M29W400FT55N3E 出自 Micron Technology 和 M29W800FT70N3E 出自 Micron Technology。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | M29W400FT55N3E | M29W800FT70N3E |
|---|---|---|
| 品牌 | Micron Technology | Micron Technology |
| 分类 | Memory ICs | Flash |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $2.80 | $2.05 |
| 存储器类型 | Flash - NOR Memory IC | NOR Flash (Parallel) |
| 存储容量 | 4 Mbit | — |
| 接口 | Parallel | Parallel, address/data bus |
| Access Time | 55 ns | 70 ns |
| Supply Voltage (VCC) | 2.7 V to 3.6 V (program, erase and read) | 2.7 V to 3.6 V |
| Sector Size | 16 KB, 8 KB, 32 KB, 64 KB (asymmetric boot-block) | — |
| Boot Block Position | Top (FT suffix) | — |
| 工作温度 | -40C to +125C | -40C to +125C |
| Temperature Grade | Automotive | — |
| 封装 | 48-TSOP I | 48-TSOP I (12 x 20 mm, 0.5 mm pitch) |
| Number of Terminals | 48 | — |
| Package Code / Shape | TSSOP / Rectangular | — |
| 安装类型 | Surface Mount | Surface Mount |
| 湿敏等级（MSL） | 3 (168 Hours) | — |
| Packaging | Tray | — |
| Peak Reflow Time | 30 s max | — |
| Companion Access-Time Grade | 55 ns and 70 ns versions available in family | — |
| Density | — | 8 Mbit |
| 存储组织 | — | 1M x 8 / 512K x 16 |
| Programming / Erase Supply | — | Single supply at VCC (2.7 V to 3.6 V) |
| Boot Block Location | — | Top boot block (FT variant) |
| Bus Width | — | 8-bit or 16-bit (BYTE pin selectable) |
| Standby Current | — | [DATA_NEEDED: standby current] |
| Program/Erase Endurance | — | [DATA_NEEDED: program/erase cycles] |
| Data Retention | — | [DATA_NEEDED: data retention] |
| Block Organization | — | [DATA_NEEDED: block size/organization] |
| RoHS 状态 | — | [DATA_NEEDED: RoHS status] |