M29W800FB70ZA3SE vs M29W800FT70ZA3SF 对比
详细并排对比 M29W800FB70ZA3SE 出自 Micron Technology 和 M29W800FT70ZA3SF 出自 Micron Technology。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Micron Technology
M29W800FB70ZA3SE - 8Mbit NOR Flash 70ns 48-TFBGA | Micron
M29W800FB70ZA3SE Obsolete规格对比
| 参数 | M29W800FB70ZA3SE | M29W800FT70ZA3SF |
|---|---|---|
| 品牌 | Micron Technology | Micron Technology |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | Obsolete | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $1.12 | $2.05 |
| 存储器类型 | NOR Flash, Parallel | NOR Flash |
| 存储容量 | 8 Mbit | — |
| 存储组织 | 1 M x 8 / 512 K x 16 | — |
| Access Time | 70 ns | 70 ns |
| 电源电压 | 3 V / 3.3 V (2.7 V to 3.6 V class) | 2.7 V to 3.6 V |
| Technology | SLC NOR | — |
| Boot Block Architecture | Bottom boot block (FB) | — |
| 接口 | Parallel, address/data bus | Parallel |
| 封装 | 48-TFBGA (6 x 8 mm) | 48-TFBGA (6 x 8 mm) |
| 安装类型 | Surface Mount | Surface Mount |
| Qualification | AEC-Q100 automotive | — |
| Packaging | Tray | — |
| 工作温度 | [DATA_NEEDED: operating temperature range] | -40C to +125C |
| Program/Erase Endurance | [DATA_NEEDED: endurance cycles] | — |
| Active Read Current | [DATA_NEEDED: ICC read] | [DATA_NEEDED: active read current] |
| Standby Current | [DATA_NEEDED: ICC standby] | [DATA_NEEDED: standby current] |
| Moisture Sensitivity Level | [DATA_NEEDED: MSL] | — |
| RoHS 状态 | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS status] |
| Density | — | 8 Mbit |
| Boot Block Configuration | — | Top boot block (FT) |
| Memory Organization | — | [DATA_NEEDED: memory organization x8/x16] |
| Program/Erase Cycles | — | [DATA_NEEDED: endurance cycles] |
| Data Retention | — | [DATA_NEEDED: data retention years] |
| Package Body Size | — | 6 x 8 mm |
| Ball Pitch | — | 0.80 mm |