M29W800FT70ZA3SE vs M29W160FB70N3E 对比

详细并排对比 M29W800FT70ZA3SE 出自 Micron Technology 和 M29W160FB70N3E 出自 Micron Technology。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Micron Technology
M29W800FT70ZA3SE M29W800FT70ZA3SE - 8Mbit 70ns NOR Flash | Micron | Embedded

M29W800FT70ZA3SE - 8Mbit 70ns NOR Flash | Micron | Embedded

M29W800FT70ZA3SE ✓ 量产中
Micron Technology
M29W160FB70N3E M29W160FB70N3E - 16Mb 3V Parallel NOR Flash 70ns | Micron

M29W160FB70N3E - 16Mb 3V Parallel NOR Flash 70ns | Micron

M29W160FB70N3E ✓ 量产中

规格对比

参数 M29W800FT70ZA3SE M29W160FB70N3E
品牌 Micron Technology Micron Technology
分类 EEPROM Memory ICs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $1.38 $3.58
存储器类型 NOR Flash (Parallel) FLASH - NOR
存储容量 8 Mbit 16 Mbit (2M x8 / 1M x16)
存储组织 512K x 16 —
Technology SLC —
Access Time 70 ns 70 ns
接口 Parallel Parallel
电源电压 2.7 V to 3.6 V —
工作温度 -40C to +125C [DATA_NEEDED: operating temperature range]
封装 48-TFBGA (6x8 mm) —
安装类型 Surface Mount Surface Mount
Programming Interface CFI command set —
Boot Block Architecture Top boot (FT = top boot block) —
Density 8 Mb —
FBGA Code [DATA_NEEDED: FBGA code] —
Chipset Validation N/A —
RoHS 状态 [DATA_NEEDED: RoHS status] —
Program/Erase Cycles [DATA_NEEDED: endurance] —
Supply Voltage (VCC) — 3.0 V to 3.6 V
Programming Voltage — Single supply (no separate VPP required)
Bus Configuration — x8 / x16 selectable (BYTE# pin)
Architecture — Boot block
封装 / 外壳 — 48-TFSOP (0.724 in, 18.40 mm width)
Packaging — Tray
Program/Erase Endurance — [DATA_NEEDED: program/erase cycles]
Data Retention — [DATA_NEEDED: data retention]
Status Output — Data polling / toggle bit
Block Protection — Yes (boot block protection)

数据手册与资源

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