MMG3012NT1 vs MMG3011NT1 对比

详细并排对比 MMG3012NT1 出自 NXP Semiconductors 和 MMG3011NT1 出自 NXP Semiconductors。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

NXP Semiconductors
MMG3012NT1 MMG3012NT1 - 6 GHz, 19 dB InGaP HBT GPA RF Amplifier | NXP

MMG3012NT1 - 6 GHz, 19 dB InGaP HBT GPA RF Amplifier | NXP

MMG3012NT1 ✓ 量产中
NXP Semiconductors
MMG3011NT1 MMG3011NT1 - 0-6 GHz, 15 dB Gain, 15 dBm InGaP HBT GPA | NXP

MMG3011NT1 - 0-6 GHz, 15 dB Gain, 15 dBm InGaP HBT GPA | NXP

MMG3011NT1 ✓ 量产中

规格对比

参数 MMG3012NT1 MMG3011NT1
品牌 NXP Semiconductors NXP Semiconductors
分类 RF Amplifiers RF Amplifiers
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $2.61 $1.88
Technology InGaP HBT (Heterojunction Bipolar Transistor) InGaP HBT (Heterojunction Bipolar Transistor)
功能 General Purpose RF Amplifier (GPA), Class A General-purpose amplifier (GPA)
Frequency Range 0 Hz to 6000 MHz (6 GHz) 0 Hz to 6000 MHz (0-6 GHz)
Small-Signal Gain 19 dB (typical, 900 MHz) 15 dB (typical)
Output P1dB 18.5 dBm (typical) —
Output IP3 (OIP3) [DATA_NEEDED: OIP3 value] —
Supply Voltage (VCC) [DATA_NEEDED: VCC range] —
电源电流 [DATA_NEEDED: ICC typical] —
Input Match Internally matched to 50 ohms —
Output Match Internally matched to 50 ohms —
Operating Case Temperature -40 °C to +85 °C —
Storage Temperature -65 °C to +150 °C —
封装 / 外壳 SOT-89-4 (TO-243AA), 4-pin surface mount —
安装类型 Surface Mount Surface Mount
RoHS 状态 Compliant [DATA_NEEDED: RoHS status not confirmed in retrieved snippets]
Lead-Free Yes [DATA_NEEDED: lead-free status not confirmed in retrieved snippets]
MSL 等级 [DATA_NEEDED: MSL rating] —
DC Blocking Required on RF input and output (DC-coupled pins) —
Manufacturer — NXP Semiconductors (formerly Freescale Semiconductor)
Output Power (P1dB) — 15 dBm (typical)
Operating Class — Class A
Input Matching — Internally matched to 50 ohms
Output Matching — Internally matched to 50 ohms
封装 — SOT-89-4
Number of Terminals — 4
Package Body Material — Plastic/Epoxy
Construction — Component

数据手册与资源

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