MPX2100D vs MPX2102DP 对比
详细并排对比 MPX2100D 出自 NXP Semiconductors 和 MPX2102DP 出自 NXP Semiconductors。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | MPX2100D | MPX2102DP |
|---|---|---|
| 品牌 | NXP Semiconductors | NXP Semiconductors |
| 分类 | Pressure Sensors | Pressure Sensors |
| 生命周期状态 | 有效 | 最后采购期 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $17.80 | $9.85 |
| Pressure Type | Differential | Differential (Dual Port) |
| Operating Pressure Range | 0 kPa to 100 kPa (0 to 14.5 psi) | 0 kPa to 100 kPa (0 PSI to 14.5 PSI) |
| Full-Scale Span (Typical) | 40 mV at 10 V excitation | — |
| Sensitivity (Nominal) | 0.4 mV/kPa | — |
| Supply Voltage (Recommended) | 10 V DC | — |
| Supply Voltage (Maximum) | 16 V DC | — |
| 输出类型 | Analog ratiometric Wheatstone bridge (millivolts) | Analog Wheatstone Bridge (ratiometric mV) |
| Pressure Port Configuration | Dual axial ports (differential) | — |
| 封装 | 4-SIP Unibody (UNIBODY4F), 2.54 mm pitch | — |
| Package Body Dimensions | 15.56 mm x 15.56 mm x 5.33 mm | — |
| 安装类型 | Through-hole SIP module | Through-Hole, Dual Vertical Port |
| 工作温度范围 | -40C to +125C [DATA_NEEDED: confirm exact range from datasheet] | -40 °C to +125 °C |
| On-Chip Temperature Compensation | Yes (factory laser-trimmed) | — |
| Technology | Silicon piezoresistive MEMS strain-gauge bridge | On-chip Temperature Compensated Silicon |
| RoHS 状态 | Compliant [DATA_NEEDED: confirm from NXP product page] | — |
| Diaphragm Material | Silicon [DATA_NEEDED: confirm] | — |
| Linearity | 0.1% to 0.3% typical [DATA_NEEDED: confirm] | [DATA_NEEDED: typical linearity %FS] |
| 传感器类型 | — | Piezoresistive Pressure Sensor |
| Full-Scale Output | — | 0 mV to 40 mV at 10 V excitation |
| Supply Voltage (Excitation) | — | 10 V typical (max specified separately) |
| Port Size | — | Male, 0.19" (4.93 mm) tube, Dual |
| Compensated Temperature Range | — | 0 °C to +85 °C |
| 封装 / 外壳 | — | 4-SIP Module (Unibody) |
| Termination Style | — | Through-Hole PCB |
| Sensitivity | — | [DATA_NEEDED: mV/V typical] |
| Series | — | MPX2102 |