MRF5S9101MBR1 vs MRF5S9101MR1 对比
详细并排对比 MRF5S9101MBR1 出自 NXP Semiconductors 和 MRF5S9101MR1 出自 NXP Semiconductors。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | MRF5S9101MBR1 | MRF5S9101MR1 |
|---|---|---|
| 品牌 | NXP Semiconductors | NXP Semiconductors |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | Obsolete | Obsolete |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $45.00 | $49.95 |
| 晶体管类型 | LDMOS, N-Channel Enhancement-Mode Lateral MOSFET | LDMOS (N-Channel Enhancement-Mode Lateral MOSFET) |
| Frequency Range | 869 MHz to 960 MHz | 869 MHz to 960 MHz |
| Test Frequency | 960 MHz | 960 MHz |
| Output Power (Pout) | 100 W | — |
| Power Gain (Gps) | 17.5 dB (min, at 960 MHz, 26 V) | — |
| Test Drain Voltage (Vdd) | 26 V | — |
| Test Drain Current (Idq) | 700 mA | — |
| Drain-Source Voltage Rating (Vdss) | 68 V | — |
| Configuration | Single, Common Source | — |
| 封装 / 外壳 | TO-272 WB-4 (Case 1486-03, Style 1) | TO-270 WB-4 (Case 1486-03, Style 1) |
| Supplier Device Package | TO-272 WB-4 | TO-270 WB-4 |
| 安装类型 | Surface Mount | Chassis / Flange Mount (through-hole flange) |
| Maximum Power Dissipation | 427 W | — |
| 工作温度 | -40C to +150C (TJ) | [DATA_NEEDED: operating temperature range] |
| RoHS 状态 | [DATA_NEEDED: RoHS compliance status] | Compliant (lead-free N-suffix variants) |
| Lead-Free / Terminal Finish | Tin-Lead (per Partstack listing) | — |
| Technology | LDMOS (Laterally Diffused MOSFET) | RF Power Field Effect Transistor |
| Application Target | GSM / GSM EDGE Base Station Power Amplifiers | — |
| Test Voltage | — | 26 V |
| Test Current (Quiescent) | — | 700 mA |
| Power Output (POUT) | — | 100 W (CW) |
| Power Gain | — | 17.5 dB at 960 MHz |
| Drain-Source Voltage (Rated) | — | 68 V |
| Drain Current Rating | — | [DATA_NEEDED: maximum continuous drain current] |
| Lead Free Status | — | Replaced by MRF5S9101NR1/NBR1 (form/fit/function equivalent) |
| Storage Temperature | — | [DATA_NEEDED: storage temperature range] |
| Thermal Resistance Junction-to-Case | — | [DATA_NEEDED: RθJC value] |
| Application | — | GSM / GSM EDGE / N-CDMA base station final-stage PA |
| Manufacturer | — | NXP Semiconductors (formerly Freescale Semiconductor) |