MT29F1G08ABAEAWP-IT:E vs K9F2808UOC-PCB0 对比
详细并排对比 MT29F1G08ABAEAWP-IT:E 出自 Micron Technology 和 K9F2808UOC-PCB0 出自 Samsung Electronics。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | MT29F1G08ABAEAWP-IT:E | K9F2808UOC-PCB0 |
|---|---|---|
| 品牌 | Micron Technology | Samsung Electronics |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 不推荐新设计 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $1.60 | $1.68 |
| 存储容量 | 1 Gbit (128 MB) | — |
| 存储组织 | 128M x 8 | 16M x 8 bit |
| 接口 | Parallel | — |
| 电源电压 | 3.3 V | — |
| Access Time | 25 ns | — |
| Page Size | 2048 bytes + 64 bytes spare | 528 bytes (512 main + 16 spare) |
| Block Size | 128 KB | 16 pages (16 KiB + 256 spare bytes) |
| Program Time | 200 us (typical) | — |
| Erase Time | 2 ms (typical) | — |
| Endurance | 100K program/erase cycles | — |
| Data Retention | 10 years | — |
| 工作温度 | -40C to +85C | Commercial / Industrial (C, I grade) |
| 封装 | TSOP-48 | — |
| 安装类型 | Surface Mount | — |
| RoHS 状态 | Compliant | — |
| 存储器类型 | — | NAND Flash (SLC, Small-Page) |
| Memory Density | — | 128 Mbit (16M x 8) |
| Operating Voltage (VCC) | — | 2.7 V to 3.6 V |
| Read Access Time | — | 50 ns |
| Package Options | — | 48-TSOP I, 48-WSOP1, 63-TBGA |
| I/O Bus Width | — | x8 |
| Command Set | — | Standard NAND (00h/01h/10h/30h/60h/D0h/50h) |
| Status Output | — | R/B# open-drain ready/busy |
| Technology Node | — | Samsung 2nd-generation SLC NAND |
| Cell Type | — | Single-Level Cell (SLC) |
| Programming Model | — | Page program, block erase |
| Lead-Free / RoHS | — | [DATA_NEEDED: RoHS status from Samsung datasheet] |