MT29F1G08ABAEAWP-IT:E vs MX30LF1G18AC-TI-T 对比

详细并排对比 MT29F1G08ABAEAWP-IT:E 出自 Micron Technology 和 MX30LF1G18AC-TI-T 出自 Macronix。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Micron Technology
MT29F1G08ABAEAWP-IT:E MT29F1G08ABAEAWP-IT:E - 1Gbit SLC NAND Flash | Micron

MT29F1G08ABAEAWP-IT:E - 1Gbit SLC NAND Flash | Micron

MT29F1G08ABAEAWP-IT:E ✓ 量产中
Macronix
MX30LF1G18AC-TI-T MX30LF1G18AC-TI-T - 1Gbit 3V SLC NAND Flash, TSOP-48 | Macronix

MX30LF1G18AC-TI-T - 1Gbit 3V SLC NAND Flash, TSOP-48 | Macronix

MX30LF1G18AC-TI-T ✓ 量产中

规格对比

参数 MT29F1G08ABAEAWP-IT:E MX30LF1G18AC-TI-T
品牌 Micron Technology Macronix
分类 Memory ICs Memory ICs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $1.60 $2.34
存储容量 1 Gbit (128 MB) —
存储组织 128M x 8 128M x 8 bit
接口 Parallel Asynchronous Parallel
电源电压 3.3 V —
Access Time 25 ns 20 ns
Page Size 2048 bytes + 64 bytes spare 1 K + 64 bytes (data + spare)
Block Size 128 KB —
Program Time 200 us (typical) —
Erase Time 2 ms (typical) —
Endurance 100K program/erase cycles [DATA_NEEDED: P/E cycle endurance spec]
Data Retention 10 years —
工作温度 -40C to +85C -40C to +85C (industrial)
封装 TSOP-48 48-pin TSOP-I (Type I)
安装类型 Surface Mount Surface Mount
RoHS 状态 Compliant —
存储器类型 — Non-volatile NAND Flash (SLC)
Density — 1 Gbit (128 M x 8)
VCC Supply — 2.7 V to 3.6 V
ECC Requirement — 4-bit ECC per 512 bytes
Block Protection — Hardware PT pin, active high at power-on, internal weak pull-down
ONFI Compliance — ONFI 1.0
Compliance — RoHS compliant

数据手册与资源

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