MT29F4G01ABBFD12-IT vs MT29F4G01ABBFD12-AUT:F 对比

详细并排对比 MT29F4G01ABBFD12-IT 出自 Micron Technology 和 MT29F4G01ABBFD12-AUT:F 出自 Micron Technology。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Micron Technology
MT29F4G01ABBFD12-IT MT29F4G01ABBFD12-IT - 4Gb 1.8V SPI NAND SLC Flash | Micron

MT29F4G01ABBFD12-IT - 4Gb 1.8V SPI NAND SLC Flash | Micron

MT29F4G01ABBFD12-IT ✓ 量产中
Micron Technology
MT29F4G01ABBFD12-AUT:F MT29F4G01ABBFD12-AUT:F - 4Gbit SLC SPI NAND Flash | Micron

MT29F4G01ABBFD12-AUT:F - 4Gbit SLC SPI NAND Flash | Micron

MT29F4G01ABBFD12-AUT:F ✓ 量产中

规格对比

参数 MT29F4G01ABBFD12-IT MT29F4G01ABBFD12-AUT:F
品牌 Micron Technology Micron Technology
分类 Memory ICs EEPROM
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $2.65 $1.58
存储器类型 FLASH - NAND (SLC), Non-Volatile FLASH - NAND (SLC) Memory IC
Density 4 Gbit (4G x 1) —
Memory Organization 4096 + 256 bytes per page (4352 bytes total) —
接口 SPI (x1, x2, x4 quad-I/O) SPI
Maximum SPI Clock 83 MHz —
Supply Voltage (VCC) 1.7 V to 1.95 V (1.8 V typical) —
封装 24-ball T-PBGA (6x8 mm) TBGA (63-ball, per Micron serial NAND family)
工作温度 -40 C to +85 C (Industrial) [DATA_NEEDED: temperature range]
Cell Technology Single-Level Cell (SLC) —
Page Size 4352 bytes (4096 data + 256 spare) [DATA_NEEDED: page size]
Block Size 256 KiB (typical, 64 pages per block) [DATA_NEEDED: block size]
On-die ECC Supported (host-assisted external ECC typical) —
安装类型 Surface Mount (BGA) Surface Mount
MSL 等级 3 (per JEDEC J-STD-020, [DATA_NEEDED: exact floor life]) [DATA_NEEDED: moisture sensitivity level]
RoHS 状态 Compliant Compliant (lead-free :F suffix)
存储容量 — 4 Gbit (512 MB)
Cell Type — SLC (Single-Level Cell)
Automotive Qualification — AUT grade, :F automotive suffix
电源电压 — [DATA_NEEDED: VCC range]
Max Clock Frequency — [DATA_NEEDED: SPI clock frequency]
On-Die ECC — Yes (ECD feature of serial NAND family)
Endurance — [DATA_NEEDED: program/erase cycles]

数据手册与资源

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