MT40A256M16GE-075E:B vs K4A4G165WD-BCPB 对比
详细并排对比 MT40A256M16GE-075E:B 出自 Micron Technology 和 K4A4G165WD-BCPB 出自 Samsung Electronics。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Micron Technology
MT40A256M16GE-075E:B - 4Gb DDR4 SDRAM 2666 MT/s | Micron
MT40A256M16GE-075E:B ✓ 量产中
规格对比
| 参数 | MT40A256M16GE-075E:B | K4A4G165WD-BCPB |
|---|---|---|
| 品牌 | Micron Technology | Samsung Electronics |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $3.95 | $3.10 |
| 存储器类型 | DDR4 SDRAM | DDR4 SDRAM |
| 存储容量 | 4 Gbit | — |
| 存储组织 | 256M x 16 | 256M x 16 |
| Memory Interface | Parallel | — |
| Clock Frequency | 1.33 GHz | — |
| 数据速率 | 2666 MT/s (DDR4-2666) | 2133 MT/s |
| VDD / VDDQ | 1.2 V +/-60 mV | — |
| VPP | 2.5 V, -125 mV/+250 mV | — |
| Internal Banks | 16 | — |
| Refresh | 64 ms / 8192-cycle; 32 ms / 8192-cycle at 95C | Self-refresh supported (TCSR per DDR4 standard features) |
| I/O Type | 1.2 V pseudo open-drain | — |
| VREFDQ | On-die, internal, adjustable generation | — |
| Special Features | Temperature controlled refresh (TCR) | — |
| 封装 | 96-FBGA (9 x 14 mm) | FBGA-96 |
| 安装类型 | Surface Mount | Surface Mount |
| 工作温度 | [DATA_NEEDED: operating temperature range for standard grade] | [DATA_NEEDED: operating temperature range] |
| Access Time | [DATA_NEEDED: CAS latency / access time] | — |
| Density | — | 4 Gbit |
| Core Voltage | — | 1.2 V |
| Die Generation | — | D-die |
| Bank Architecture | — | 4 bank groups x 4 banks |
| CAS 延迟 | — | [DATA_NEEDED: CAS Latency at 2133 speed bin] |
| Burst Length | — | 8 (BL8, fixed/chop) |
| 接口 | — | DDR4 (synchronous, source-synchronous strobe) |
| Pb-Free | — | Yes (per Samsung part-numbering suffix) |
| RoHS 状态 | — | Compliant (lead-free suffix) |