MT40A256M16GE-075E:B vs K3LK4L40DM-BGCT 对比

详细并排对比 MT40A256M16GE-075E:B 出自 Micron Technology 和 K3LK4L40DM-BGCT 出自 Samsung Electronics。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Micron Technology
MT40A256M16GE-075E:B MT40A256M16GE-075E:B - 4Gb DDR4 SDRAM 2666 MT/s | Micron

MT40A256M16GE-075E:B - 4Gb DDR4 SDRAM 2666 MT/s | Micron

MT40A256M16GE-075E:B ✓ 量产中
Samsung Electronics
K3LK4L40DM-BGCT K3LK4L40DM-BGCT - Samsung DRAM Memory IC | Samsung Electronics

K3LK4L40DM-BGCT - Samsung DRAM Memory IC | Samsung Electronics

K3LK4L40DM-BGCT ✓ 量产中

规格对比

参数 MT40A256M16GE-075E:B K3LK4L40DM-BGCT
品牌 Micron Technology Samsung Electronics
分类 Memory ICs DRAM
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $3.95 $40.50
存储器类型 DDR4 SDRAM DRAM (SDRAM component)
存储容量 4 Gbit —
存储组织 256M x 16 —
Memory Interface Parallel —
Clock Frequency 1.33 GHz —
数据速率 2666 MT/s (DDR4-2666) [DATA_NEEDED: Data Rate]
VDD / VDDQ 1.2 V +/-60 mV —
VPP 2.5 V, -125 mV/+250 mV —
Internal Banks 16 —
Refresh 64 ms / 8192-cycle; 32 ms / 8192-cycle at 95C —
I/O Type 1.2 V pseudo open-drain —
VREFDQ On-die, internal, adjustable generation —
Special Features Temperature controlled refresh (TCR) —
封装 96-FBGA (9 x 14 mm) —
安装类型 Surface Mount Surface Mount
工作温度 [DATA_NEEDED: operating temperature range for standard grade] [DATA_NEEDED: Operating Temperature Range]
Access Time [DATA_NEEDED: CAS latency / access time] —
Manufacturer — Samsung Electronics
Density — [DATA_NEEDED: Density]
Organization (x-width) — [DATA_NEEDED: Organization]
Supply Voltage Class — [DATA_NEEDED: Supply Voltage]
CAS 延迟 — [DATA_NEEDED: CAS Latency]
Package Type — BGA (per -BGC ordering-code suffix)
Package Ball Count — [DATA_NEEDED: Ball Count]
Refresh Rate — [DATA_NEEDED: Refresh Interval]
RoHS 状态 — [DATA_NEEDED: RoHS Status]
Lead Free — [DATA_NEEDED: Lead-Free Status]
MSL 等级 — [DATA_NEEDED: Moisture Sensitivity Level]
Packaging — Tape & Reel (per -T-style suffix convention) [DATA_NEEDED: confirmed packaging]

数据手册与资源

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