MT40A256M16GE-075E:B vs K4AAG165WM-BCWE 对比
详细并排对比 MT40A256M16GE-075E:B 出自 Micron Technology 和 K4AAG165WM-BCWE 出自 Samsung Electronics。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Micron Technology
MT40A256M16GE-075E:B - 4Gb DDR4 SDRAM 2666 MT/s | Micron
MT40A256M16GE-075E:B ✓ 量产中
规格对比
| 参数 | MT40A256M16GE-075E:B | K4AAG165WM-BCWE |
|---|---|---|
| 品牌 | Micron Technology | Samsung Electronics |
| 分类 | Memory ICs | DRAM |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $3.95 | $54.65 |
| 存储器类型 | DDR4 SDRAM | DDR4 SDRAM |
| 存储容量 | 4 Gbit | — |
| 存储组织 | 256M x 16 | 256M x 16 (1G x 16) |
| Memory Interface | Parallel | — |
| Clock Frequency | 1.33 GHz | — |
| 数据速率 | 2666 MT/s (DDR4-2666) | 3200 Mbps |
| VDD / VDDQ | 1.2 V +/-60 mV | — |
| VPP | 2.5 V, -125 mV/+250 mV | — |
| Internal Banks | 16 | — |
| Refresh | 64 ms / 8192-cycle; 32 ms / 8192-cycle at 95C | — |
| I/O Type | 1.2 V pseudo open-drain | — |
| VREFDQ | On-die, internal, adjustable generation | — |
| Special Features | Temperature controlled refresh (TCR) | — |
| 封装 | 96-FBGA (9 x 14 mm) | 78-ball FBGA |
| 安装类型 | Surface Mount | Surface Mount |
| 工作温度 | [DATA_NEEDED: operating temperature range for standard grade] | [DATA_NEEDED: temperature range for WM-BCWE] |
| Access Time | [DATA_NEEDED: CAS latency / access time] | — |
| Density | — | 16 Gbit |
| 接口 | — | Parallel (DDR4) |
| Supply Voltage VDD | — | 1.2 V |
| Supply Voltage VDDQ | — | 1.2 V |
| Access Time (Clock Cycle Time) | — | [DATA_NEEDED: tCK for BCWE bin] |
| CAS 延迟 | — | [DATA_NEEDED: CL at 3200 Mbps] |
| Bank Groups | — | 4 (x16 configuration) |
| Burst Length | — | 8 |
| Die Revision | — | W (WM suffix) |
| RoHS 状态 | — | Compliant |
| Operating Frequency | — | 1600 MHz (DDR, 3200 Mbps) |