MT40A512M16LY-062E:E vs AS4C512M16D4B-62BCNTR 对比
详细并排对比 MT40A512M16LY-062E:E 出自 Micron Technology 和 AS4C512M16D4B-62BCNTR 出自 Alliance Memory。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Micron Technology
MT40A512M16LY-062E:E - 8Gb DDR4-3200 x16 SDRAM | Micron
MT40A512M16LY-062E:E ✓ 量产中Alliance Memory
AS4C512M16D4B-62BCNTR - 8Gb DDR4 SDRAM 512Mx16 | Alliance Memory
AS4C512M16D4B-62BCNTR ✓ 量产中规格对比
| 参数 | MT40A512M16LY-062E:E | AS4C512M16D4B-62BCNTR |
|---|---|---|
| 品牌 | Micron Technology | Alliance Memory |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $34.99 | $8.10 |
| 存储器类型 | SDRAM - DDR4 | DDR4 SDRAM |
| Density | 8 Gbit (512M x 16) | — |
| 存储组织 | x16 | 512M x 16 |
| Clock Frequency | 1600 MHz (DDR4-3200, -062E speed grade) | 1600 MHz |
| 数据速率 | 3200 MT/s | 3200 MT/s |
| Access Time (tRCD/tRP) | 19 ns (per DigiKey listing) | — |
| Voltage - Supply (VDD) | 1.2 V (typical), 1.14 V min / 1.26 V max | — |
| Voltage - VPP | 2.5 V (typical) | — |
| 接口 | Parallel (LVCMOS / SSTL) | Parallel |
| 封装 / 外壳 | 96-TFBGA (7.5 x 13.5 mm) | — |
| 安装类型 | Surface Mount | Surface Mount |
| 工作温度 | [DATA_NEEDED: exact operating temp range for -062E:E base part; IT:E variant is -40C to +95C per Micron] | 0°C to 95°C |
| Refresh Cycles | 65536 | — |
| On-Die Termination | Yes (ODT) | — |
| Write Leveling | Yes | — |
| ZQ Calibration | Yes | — |
| CRC Function | Yes (data channel) | — |
| Data Mask Function | Yes | — |
| Auto Precharge | Yes | — |
| Auto Self-Refresh | Yes (LPASR) | — |
| Asynchronous Reset | Yes | — |
| RoHS 状态 | Compliant | Compliant |
| 存储容量 | — | 8 Gbit (512M x 16) |
| CAS 延迟 | — | 19 ns |
| 电源电压 | — | 1.2 V (1.14V to 1.26V) |
| 封装 | — | 96-FBGA (7.5x13 mm) |
| JEDEC Standard | — | Compliant |
| Revision | — | Rev.B |
| Lead-Free | — | Yes |