MT40A512M16TD-062E AUT:R vs NT5AD512M16C4-JRU 对比

详细并排对比 MT40A512M16TD-062E AUT:R 出自 Micron Technology 和 NT5AD512M16C4-JRU 出自 Nanya Technology。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Micron Technology
MT40A512M16TD-062E AUT:R MT40A512M16TD-062E AUT:R - 8Gbit DDR4 SDRAM | Micron

MT40A512M16TD-062E AUT:R - 8Gbit DDR4 SDRAM | Micron

MT40A512M16TD-062E AUT:R ✓ 量产中
Nanya Technology
NT5AD512M16C4-JRU NT5AD512M16C4-JRU - DDR4 8Gb 512Mx16 Industrial SDRAM | Nanya

NT5AD512M16C4-JRU - DDR4 8Gb 512Mx16 Industrial SDRAM | Nanya

NT5AD512M16C4-JRU ✓ 量产中

规格对比

参数 MT40A512M16TD-062E AUT:R NT5AD512M16C4-JRU
品牌 Micron Technology Nanya Technology
分类 Memory ICs DRAM
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $3.90 $83.00
存储器类型 DDR4 SDRAM DDR4 SDRAM
存储容量 8 Gbit —
存储组织 512M x 16 512M x 16
接口 Parallel CMOS, DDR4
Clock Frequency / Data Rate 1.6 GHz —
Access Time 19 ns —
电源电压 1.2 V —
封装 96-FBGA (7.5 x 13 mm) 96-ball FBGA (PBGA96)
安装类型 Surface Mount Surface Mount
Automotive Qualification AEC-Q100 (AUT grade) —
Packaging Suffix -R (Tape & Reel) —
Speed Grade -062E —
Technology Family DDR4 SDRAM (SDR/DDR family) —
工作温度范围 [DATA_NEEDED: operating temperature range] —
Refresh Rate [DATA_NEEDED: refresh interval spec] —
Density — 8 Gbit
Clock Frequency — 1600 MHz (3200 Mbps data rate)
CAS Latency (CL) — 22 at 1600 MHz
Supply Voltage (VDD) — 1.2 V
工作温度 — -40 C to +95 C (industrial grade)
Auto Self-Refresh — Yes
Built-in Temperature Sensor — Yes
Auto Precharge — Yes
Asynchronous Reset — Yes
Data Mask (DM) — Yes
Write Leveling — Yes
Dynamic On-Chip Termination (ODT) — Yes
ZQ Calibration — Yes
CRC Function — Yes
RoHS 状态 — Green Product (per Nanya product page)

数据手册与资源

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