MT41K128M16JT-125-ITK vs MT41K128M16JT-125:K 对比

详细并排对比 MT41K128M16JT-125-ITK 出自 Micron Technology 和 MT41K128M16JT-125:K 出自 Micron Technology。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Micron Technology
MT41K128M16JT-125-ITK MT41K128M16JT-125-ITK - 2Gb DDR3L SDRAM 1.35V | Micron

MT41K128M16JT-125-ITK - 2Gb DDR3L SDRAM 1.35V | Micron

MT41K128M16JT-125-ITK ✓ 量产中
Micron Technology
MT41K128M16JT-125:K MT41K128M16JT-125:K - 2Gb DDR3L SDRAM 1600MT/s | Micron Technology

MT41K128M16JT-125:K - 2Gb DDR3L SDRAM 1600MT/s | Micron Technology

MT41K128M16JT-125:K ✓ 量产中

规格对比

参数 MT41K128M16JT-125-ITK MT41K128M16JT-125:K
品牌 Micron Technology Micron Technology
分类 Memory ICs Memory ICs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $10.60 $9.75
存储器类型 DDR3L SDRAM DDR3L SDRAM
存储容量 2 Gbit —
Memory Organization 128M x 16 —
Memory Interface Parallel —
Clock Frequency 800 MHz (DDR3L-1600) 800 MHz (1600 MT/s data rate)
Access Time 13.75 ns —
电源电压 1.35 V (1.5 V DDR3-compatible mode supported) —
工作温度 -40C to +95C 0C to +95C
封装 96-FBGA (8x14 mm) 96-FBGA (8x14 mm)
安装类型 Surface Mount Surface Mount
Auto Self-Refresh Yes —
Auto Precharge Yes —
Asynchronous Reset Yes Supported
Data Mask Function Yes —
Dynamic On-Chip Termination (ODT) Yes —
ZQ Calibration Yes —
Write Leveling Yes Supported
RoHS 状态 Compliant Compliant
Memory Capacity — 2 Gbit
存储组织 — 128M x 16
接口 — Parallel
Access Time (Clock Cycle) — 13.75 ns
Supply Voltage (VDD) — 1.35 V (1.283 V to 1.45 V)
Prefetch Architecture — 8n-bit
Self Refresh — Auto self-refresh
Data Mask — Supported
On-Die Termination — Dynamic ODT supported

数据手册与资源

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