MT41K128M16JT-125K-TR vs MT41K128M16JT-125:K 对比

详细并排对比 MT41K128M16JT-125K-TR 出自 Micron Technology 和 MT41K128M16JT-125:K 出自 Micron Technology。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Micron Technology
MT41K128M16JT-125K-TR MT41K128M16JT-125K-TR - DDR3L 2Gbit 800MHz DRAM | Micron

MT41K128M16JT-125K-TR - DDR3L 2Gbit 800MHz DRAM | Micron

MT41K128M16JT-125K-TR ✓ 量产中
Micron Technology
MT41K128M16JT-125:K MT41K128M16JT-125:K - 2Gb DDR3L SDRAM 1600MT/s | Micron Technology

MT41K128M16JT-125:K - 2Gb DDR3L SDRAM 1600MT/s | Micron Technology

MT41K128M16JT-125:K ✓ 量产中

规格对比

参数 MT41K128M16JT-125K-TR MT41K128M16JT-125:K
品牌 Micron Technology Micron Technology
分类 Memory ICs Memory ICs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $46.86 $9.75
存储器类型 DDR3L SDRAM DDR3L SDRAM
存储容量 2 Gbit —
存储组织 128M x 16 128M x 16
接口 Parallel Parallel
Clock Frequency 800 MHz 800 MHz (1600 MT/s data rate)
Access Time 13.75 ns —
Core Supply Voltage 1.35 V (1.5 V compatible) —
Prefetch Architecture 8n-bit 8n-bit
封装 96-FBGA (8 x 14 mm) 96-FBGA (8x14 mm)
安装类型 Surface Mount Surface Mount
Packaging Tape & Reel (TR) —
Technology CMOS DRAM —
Data Rate Class DDR3L-1600 (at 800 MHz clock) —
工作温度 [DATA_NEEDED: Operating Temperature Range] 0C to +95C
RoHS 状态 [DATA_NEEDED: RoHS Status] Compliant
On-Die Termination (ODT) [DATA_NEEDED: ODT availability] —
Refresh [DATA_NEEDED: Refresh specification] —
Memory Capacity — 2 Gbit
Access Time (Clock Cycle) — 13.75 ns
Supply Voltage (VDD) — 1.35 V (1.283 V to 1.45 V)
Self Refresh — Auto self-refresh
Write Leveling — Supported
Data Mask — Supported
On-Die Termination — Dynamic ODT supported
Asynchronous Reset — Supported

数据手册与资源

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