MT41K256M16MTW-107IT vs IS43TR16256AL-107MBLI 对比

详细并排对比 MT41K256M16MTW-107IT 出自 Micron Technology 和 IS43TR16256AL-107MBLI 出自 ISSI, Integrated Silicon Solution Inc。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Micron Technology
MT41K256M16MTW-107IT MT41K256M16MTW-107IT - 4Gb DDR3L SDRAM 933MHz | Micron

MT41K256M16MTW-107IT - 4Gb DDR3L SDRAM 933MHz | Micron

MT41K256M16MTW-107IT ✓ 量产中
ISSI, Integrated Silicon Solution Inc
IS43TR16256AL-107MBLI IS43TR16256AL-107MBLI - 4Gb DDR3L SDRAM 256Mx16 | ISSI

IS43TR16256AL-107MBLI - 4Gb DDR3L SDRAM 256Mx16 | ISSI

IS43TR16256AL-107MBLI ✓ 量产中

规格对比

参数 MT41K256M16MTW-107IT IS43TR16256AL-107MBLI
品牌 Micron Technology ISSI, Integrated Silicon Solution Inc
分类 Memory ICs Memory ICs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $13.50 $2.00
存储器类型 DDR3L SDRAM DDR3L SDRAM
存储容量 4 Gbit (256M x 16) 4 Gbit
Clock Speed 933 MHz 933 MHz
数据总线宽度 16 bit —
电源电压 1.35 V 1.35V (backward compatible to 1.5V)
Row Cycle Time (tRC) 20 ns —
CAS 延迟 13 —
工作温度范围 -40°C to +95°C —
封装 96-FBGA (8x14 mm) —
安装类型 Surface Mount Surface Mount
接口 Parallel —
Access Time 0.195 ns 20 ns
RoHS 状态 Compliant Compliant
Lead-Free Yes —
Technology CMOS —
存储组织 — 256M x 16
数据速率 — 1866 Mbps
封装 / 外壳 — 96-TWBGA (9x13mm)
工作温度 — [DATA_NEEDED: operating temperature range]
Number of Banks — 8
Burst Length — 8 and 4
On-Die Termination — Yes
Memory Interface — Parallel

数据手册与资源

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