MT53B128M32D1NP-062 vs MT53B128M32D1DS-053 AUT:A 对比

详细并排对比 MT53B128M32D1NP-062 出自 Micron Technology 和 MT53B128M32D1DS-053 AUT:A 出自 Micron Technology。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Micron Technology
MT53B128M32D1NP-062 MT53B128M32D1NP-062 - 4Gbit LPDDR4 SDRAM 1.6GHz | Micron

MT53B128M32D1NP-062 - 4Gbit LPDDR4 SDRAM 1.6GHz | Micron

MT53B128M32D1NP-062 ✓ 量产中
Micron Technology
MT53B128M32D1DS-053 AUT:A MT53B128M32D1DS-053 AUT:A - 4Gbit LPDDR4 1.866GHz | Micron

MT53B128M32D1DS-053 AUT:A - 4Gbit LPDDR4 1.866GHz | Micron

MT53B128M32D1DS-053 AUT:A ✓ 量产中

规格对比

参数 MT53B128M32D1NP-062 MT53B128M32D1DS-053 AUT:A
品牌 Micron Technology Micron Technology
分类 Memory ICs DRAM
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $6.05 $0.00
存储器类型 Mobile LPDDR4 SDRAM SDRAM - Mobile LPDDR4
Density 4 Gbit —
存储组织 128M x 32 —
Clock Frequency 1.6 GHz 1.866 GHz
Supply Voltage (VDD) 1.1 V —
封装 200-WFBGA (10 x 14.5 mm) 200-WFBGA (10 mm x 14.5 mm)
安装类型 Surface Mount Surface Mount
接口 JEDEC LPDDR4 Parallel
Speed Grade -062 -053 (1866 MHz)
Operating Temperature (AUT:A variant) -40C to +125C (TC) —
Operating Temperature (AAT:A variant) -40C to +105C (TC) —
Automotive Qualification (AUT:A variant) AEC-Q100 —
Packaging Tape & Reel (TR variants) —
RoHS 状态 [DATA_NEEDED: RoHS status] [DATA_NEEDED: RoHS status]
MSL 等级 [DATA_NEEDED: moisture sensitivity level] [DATA_NEEDED: moisture sensitivity level]
Data Rate Class [DATA_NEEDED: MT/s data rate] —
存储容量 — 4 Gbit
Memory Organization — 128M x 32
Access Time (Clock Cycle) — 3.5 ns
Supply Voltage (VDD/VDDQ) — 1.1 V
工作温度 — -40C to +125C
Grade — Automotive (AUT, AEC-Q100)
Memory Format — DRAM (volatile)
Feature — Ultra-low power consumption for enhanced battery life
Packaging Option — Tape & Reel (TR suffix variant)

数据手册与资源

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