MT53E128M32D2DS-053 vs MT53D512M32D2DS-053 WT:D 对比
详细并排对比 MT53E128M32D2DS-053 出自 Micron Technology 和 MT53D512M32D2DS-053 WT:D 出自 Micron Technology。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Micron Technology
MT53D512M32D2DS-053 WT:D - 16Gb LPDDR4 SDRAM | Micron
MT53D512M32D2DS-053 WT:D ✓ 量产中规格对比
| 参数 | MT53E128M32D2DS-053 | MT53D512M32D2DS-053 WT:D |
|---|---|---|
| 品牌 | Micron Technology | Micron Technology |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $3.55 | $6.05 |
| 存储器类型 | Mobile LPDDR4 / LPDDR4X SDRAM (unified) | SDRAM - Mobile LPDDR4 |
| Density | 4 Gbit | — |
| 存储组织 | 128M x 32 | 512M x 32 |
| 数据速率 | 1.866 GHz (1866 Mbps/pin) | — |
| Speed Grade | -053 | -053 |
| 封装 | 200-ball WFBGA (10 x 14.5 mm) | 200-WFBGA (10 mm x 14.5 mm) |
| VDDQ (LPDDR4X mode) | 0.6 V | — |
| VDDQ (LPDDR4 mode) | 1.10 V | — |
| VDD | [DATA_NEEDED: VDD supply voltage] | — |
| Configuration | DDP (double-die package) | — |
| 安装类型 | Surface Mount | Surface Mount |
| Automotive Variant | MT53E128M32D2DS-053 AUT:A / AAT:A / AIT:A available | — |
| RoHS 状态 | Compliant | RoHS Compliant (per DigiKey listing) |
| 工作温度 | [DATA_NEEDED: operating temperature range] | -40C to +85C |
| Refresh | [DATA_NEEDED: refresh mode 8x/16x] | Auto refresh and self refresh |
| Access Type | Synchronous, bank-group burst | — |
| MSL 等级 | [DATA_NEEDED: moisture sensitivity level] | — |
| 存储容量 | — | 16 Gbit (2 GB) |
| Clock Frequency / Data Rate | — | 1.866 GHz (1866 MT/s) |
| Die Configuration | — | DDP (Double Die Package) |
| 特性 | — | Auto self-refresh, built-in temperature sensor, auto precharge, write leveling, ZQ calibration, asynchronous reset, data mask |
| 数据总线宽度 | — | 32 bit |
| Memory Interface | — | Parallel, LPDDR4 |
| Self-Refresh | — | Auto self-refresh with temperature-compensated refresh |
| 电源电压 | — | [DATA_NEEDED: VDD/VDDQ supply voltage] |