MT53E128M32D2DS-053 vs MT53E256M32D2DS-053 WT:B 对比
详细并排对比 MT53E128M32D2DS-053 出自 Micron Technology 和 MT53E256M32D2DS-053 WT:B 出自 Micron Technology。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Micron Technology
MT53E256M32D2DS-053 - 8Gb LPDDR4 DRAM 1.866GHz | Micron
MT53E256M32D2DS-053 WT:B ✓ 量产中规格对比
| 参数 | MT53E128M32D2DS-053 | MT53E256M32D2DS-053 WT:B |
|---|---|---|
| 品牌 | Micron Technology | Micron Technology |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $3.55 | $21.90 |
| 存储器类型 | Mobile LPDDR4 / LPDDR4X SDRAM (unified) | LPDDR4 SDRAM (Mobile DRAM) |
| Density | 4 Gbit | 8 Gbit (256M x 32) |
| 存储组织 | 128M x 32 | 256M x 32 |
| 数据速率 | 1.866 GHz (1866 Mbps/pin) | 1866 Mbps/pin (1.866 GHz) |
| Speed Grade | -053 | — |
| 封装 | 200-ball WFBGA (10 x 14.5 mm) | 200-ball WFBGA, 10 x 14.5 mm |
| VDDQ (LPDDR4X mode) | 0.6 V | — |
| VDDQ (LPDDR4 mode) | 1.10 V | — |
| VDD | [DATA_NEEDED: VDD supply voltage] | — |
| Configuration | DDP (double-die package) | — |
| 安装类型 | Surface Mount | Surface Mount (BGA) |
| Automotive Variant | MT53E128M32D2DS-053 AUT:A / AAT:A / AIT:A available | — |
| RoHS 状态 | Compliant | Compliant (per JLCPCB/LCSC listing) |
| 工作温度 | [DATA_NEEDED: operating temperature range] | — |
| Refresh | [DATA_NEEDED: refresh mode 8x/16x] | — |
| Access Type | Synchronous, bank-group burst | — |
| MSL 等级 | [DATA_NEEDED: moisture sensitivity level] | [DATA_NEEDED: MSL level] |
| Supply Voltage (VDD2/VDDQ) | — | 1.1 V |
| Operating Temperature (WT grade) | — | -30C to +85C |
| Self-Refresh | — | Auto self-refresh with built-in temperature sensor |
| 特性 | — | Auto precharge, write leveling, ZQ calibration |
| Bus Width | — | 32-bit |
| Peak Bandwidth (per device) | — | approximately 7.46 GB/s (32-bit x 1866 Mbps) |
| Access Time / CAS Latency | — | [DATA_NEEDED: CL at 1866 Mbps] |
| Refresh Interval | — | [DATA_NEEDED: tREFI specification] |
| Package Height | — | [DATA_NEEDED: max package height] |