MT53E1G32D2FW-046 AUT:B vs MT53D1024M32D4DT-046 AUT:D 对比
详细并排对比 MT53E1G32D2FW-046 AUT:B 出自 Micron Technology 和 MT53D1024M32D4DT-046 AUT:D 出自 Micron Technology。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Micron Technology
MT53E1G32D2FW-046 AUT:B - 32Gbit LPDDR4X DRAM | Micron
MT53E1G32D2FW-046 AUT:B ✓ 量产中Micron Technology
MT53D1024M32D4DT-046 AUT:D - 32Gbit LPDDR4 DRAM | Micron
MT53D1024M32D4DT-046 AUT:D ✓ 量产中规格对比
| 参数 | MT53E1G32D2FW-046 AUT:B | MT53D1024M32D4DT-046 AUT:D |
|---|---|---|
| 品牌 | Micron Technology | Micron Technology |
| 分类 | Memory ICs | Mobile LPDDR4 |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $273.51 | $29.75 |
| 存储器类型 | SDRAM - Mobile LPDDR4X | Mobile LPDDR4/LPDDR4X SDRAM |
| 存储容量 | 32 Gbit (4 GB) | — |
| 存储组织 | x32 Parallel | 1 Gbit x 32 |
| Clock Frequency | 2.133 GHz | [DATA_NEEDED: clock frequency] |
| Access Time / Clock Cycle | 3.5 ns | — |
| 接口 | Parallel | LPDDR4/LPDDR4X unified (per 200b datasheet) |
| 封装 | 200-TFBGA (10 mm x 14.5 mm) | 200-WFBGA |
| 工作温度 | -40C to +125C | -40 C to +125 C |
| Temperature Grade | Automotive (AUT) | — |
| Self-Refresh | Auto self-refresh | — |
| Built-in Temperature Sensor | Yes | — |
| Auto Precharge | Yes | — |
| Write Leveling | Yes | — |
| ZQ Calibration | Yes | — |
| 安装类型 | Surface Mount | Surface Mount |
| VDDQ Supply Voltage | [DATA_NEEDED: VDDQ supply voltage] | — |
| VDD Supply Voltage | [DATA_NEEDED: VDD supply voltage] | — |
| MSL 等级 | [DATA_NEEDED: moisture sensitivity level] | — |
| RoHS 状态 | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS status] |
| AEC-Q100 Qualification | [DATA_NEEDED: AEC-Q100 qualification] | — |
| Density | — | 32 Gbit |
| 数据速率 | — | [DATA_NEEDED: data rate MT/s] |
| VDDQ Voltage (LPDDR4) | — | 1.10 V |
| VDDQ Voltage (LPDDR4X) | — | 0.60 V |
| Package Size | — | [DATA_NEEDED: package dimensions mm] |
| Automotive Grade | — | Yes (AUT:D suffix, automotive flow) |
| Speed Grade | — | -046 |
| Die Configuration | — | [DATA_NEEDED: SDP/DDP/QDP configuration] |