MT53E1G32D2FW-046 AUT:C vs MT53E1G32D2FW-046 AUT:B 对比
详细并排对比 MT53E1G32D2FW-046 AUT:C 出自 Micron Technology 和 MT53E1G32D2FW-046 AUT:B 出自 Micron Technology。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Micron Technology
MT53E1G32D2FW-046 AUT:C - 32Gb LPDDR4X SDRAM | Micron Automotive
MT53E1G32D2FW-046 AUT:C ObsoleteMicron Technology
MT53E1G32D2FW-046 AUT:B - 32Gbit LPDDR4X DRAM | Micron
MT53E1G32D2FW-046 AUT:B ✓ 量产中规格对比
| 参数 | MT53E1G32D2FW-046 AUT:C | MT53E1G32D2FW-046 AUT:B |
|---|---|---|
| 品牌 | Micron Technology | Micron Technology |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | Obsolete | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $21.50 | $273.51 |
| 存储器类型 | Volatile DRAM (LPDDR4X SDRAM) | SDRAM - Mobile LPDDR4X |
| 存储容量 | 32 Gbit (4 GB) | 32 Gbit (4 GB) |
| Memory Organization | 1G x 32 | — |
| 接口类型 | Parallel | — |
| 最大时钟频率 | 2.133 GHz | — |
| Access Time | 3.5 ns | — |
| 数据速率 | 4266 MT/s | — |
| Supply Voltage VDD | 1.1 V | — |
| Supply Voltage VDDQ | 0.6 V | — |
| 工作温度范围 | -40°C to +125°C (AEC-Q100 automotive) | — |
| 封装 | 200-TFBGA (10 x 14.5 mm) | 200-TFBGA (10 mm x 14.5 mm) |
| 安装类型 | Surface Mount | Surface Mount |
| AEC-Q100 Qualification | Qualified (Automotive Grade 2) | [DATA_NEEDED: AEC-Q100 qualification] |
| On-die Temperature Sensor | Yes | — |
| Auto Self-Refresh | Yes | — |
| ZQ Calibration | Yes | Yes |
| Write Leveling | Yes | Yes |
| Auto Precharge | Yes | Yes |
| Data Mask Function | Yes | — |
| Asynchronous Reset | Yes | — |
| RoHS 状态 | Compliant | [DATA_NEEDED: RoHS status] |
| 存储组织 | — | x32 Parallel |
| Clock Frequency | — | 2.133 GHz |
| Access Time / Clock Cycle | — | 3.5 ns |
| 接口 | — | Parallel |
| 工作温度 | — | -40C to +125C |
| Temperature Grade | — | Automotive (AUT) |
| Self-Refresh | — | Auto self-refresh |
| Built-in Temperature Sensor | — | Yes |
| VDDQ Supply Voltage | — | [DATA_NEEDED: VDDQ supply voltage] |
| VDD Supply Voltage | — | [DATA_NEEDED: VDD supply voltage] |
| MSL 等级 | — | [DATA_NEEDED: moisture sensitivity level] |