MT53E2G32D4DE-046 vs MT53E2G32D4DE-046 AUT:C 对比
详细并排对比 MT53E2G32D4DE-046 出自 Micron Technology 和 MT53E2G32D4DE-046 AUT:C 出自 Micron Technology。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Micron Technology
MT53E2G32D4DE-046 AUT:C - 64Gbit LPDDR4X DRAM | Micron
MT53E2G32D4DE-046 AUT:C ✓ 量产中规格对比
| 参数 | MT53E2G32D4DE-046 | MT53E2G32D4DE-046 AUT:C |
|---|---|---|
| 品牌 | Micron Technology | Micron Technology |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $57.89 | $31.50 |
| 存储器类型 | Mobile LPDDR4X SDRAM | SDRAM - Mobile LPDDR4X |
| 存储容量 | 64 Gbit (8 GB) | 64 Gbit |
| 存储组织 | 2G x 32 | 2G x 32 |
| Clock Frequency | 2133 MHz (2.133 GHz) | 2.133 GHz |
| Access Time (Cycle) | 3.5 ns | — |
| 数据速率 | 4266 MT/s max class (-046 speed bin per LPDDR4X interface) | — |
| Supply Voltage (VDD) | 1.06 V to 1.17 V | — |
| 接口 | Parallel | Parallel |
| Operating Current (Idd) | 168 mA | — |
| Standby Current | 2 mA | [DATA_NEEDED: standby current] |
| 封装 | 200-TFBGA (10 x 14.5 mm) | 200-TFBGA (10 x 14.5 mm) |
| 安装类型 | Surface Mount | Surface Mount |
| Operating Temperature (WT grade) | -25C to +85C | — |
| Operating Temperature (AUT grade) | -40C to +125C | — |
| Operating Temperature (AIT grade) | -40C to +95C | — |
| 特性 | Auto precharge, auto self-refresh, ZQ calibration, built-in temperature sensor, write leveling, data mask, asynchronous reset | — |
| RoHS 状态 | Compliant | Compliant |
| Access Time | — | 3.5 ns |
| Bus Width | — | 32 bit |
| Grade | — | Automotive (AUT) |
| Die Revision | — | C |
| Supply Voltage VDD | — | [DATA_NEEDED: VDD voltage] |
| Supply Voltage VDDQ | — | [DATA_NEEDED: VDDQ voltage] |
| 工作温度 | — | [DATA_NEEDED: operating temperature range] |
| Packaging | — | [DATA_NEEDED: tray/reel quantity] |