MT53E512M32D2FW-046 AAT:D vs MT53E1G32D2FW-046 AUT:B 对比
详细并排对比 MT53E512M32D2FW-046 AAT:D 出自 Micron Technology 和 MT53E1G32D2FW-046 AUT:B 出自 Micron Technology。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Micron Technology
MT53E512M32D2FW-046 - 16Gb LPDDR4 SDRAM 2133MHz | Micron
MT53E512M32D2FW-046 AAT:D ✓ 量产中Micron Technology
MT53E1G32D2FW-046 AUT:B - 32Gbit LPDDR4X DRAM | Micron
MT53E1G32D2FW-046 AUT:B ✓ 量产中规格对比
| 参数 | MT53E512M32D2FW-046 AAT:D | MT53E1G32D2FW-046 AUT:B |
|---|---|---|
| 品牌 | Micron Technology | Micron Technology |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $13.75 | $273.51 |
| 存储器类型 | SDRAM - Mobile LPDDR4/LPDDR4X | SDRAM - Mobile LPDDR4X |
| 存储容量 | 16 Gbit | 32 Gbit (4 GB) |
| 存储组织 | 512M x 32 | x32 Parallel |
| 接口 | Parallel | Parallel |
| Clock Frequency | 2133 MHz (2.133 GHz) | 2.133 GHz |
| Cycle Time | 3.5 ns | — |
| Supply Voltage VDD | 1.1 V | — |
| Supply Voltage VDDQ (LPDDR4) | 1.1 V | — |
| Supply Voltage VDDQ (LPDDR4X) | 0.6 V | — |
| Core Voltage VDD2 | 1.8 V | — |
| 工作温度 | -40C to +105C (AAT:D grade) | -40C to +125C |
| 封装 | 200-TFBGA (10 mm x 14.5 mm) | 200-TFBGA (10 mm x 14.5 mm) |
| 安装类型 | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q100 (AUT:D variant verified; AAT:D automotive grade per Micron catalog) | — |
| Memory Configuration Speed Grade | -046 (2133) | — |
| RoHS 状态 | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS status] |
| MSL 等级 | [DATA_NEEDED: moisture sensitivity level] | [DATA_NEEDED: moisture sensitivity level] |
| Access Time / Clock Cycle | — | 3.5 ns |
| Temperature Grade | — | Automotive (AUT) |
| Self-Refresh | — | Auto self-refresh |
| Built-in Temperature Sensor | — | Yes |
| Auto Precharge | — | Yes |
| Write Leveling | — | Yes |
| ZQ Calibration | — | Yes |
| VDDQ Supply Voltage | — | [DATA_NEEDED: VDDQ supply voltage] |
| VDD Supply Voltage | — | [DATA_NEEDED: VDD supply voltage] |
| AEC-Q100 Qualification | — | [DATA_NEEDED: AEC-Q100 qualification] |