NT5AD512M16C4-JRU vs MT40A512M16LY-062E AAT:E 对比
详细并排对比 NT5AD512M16C4-JRU 出自 Nanya Technology 和 MT40A512M16LY-062E AAT:E 出自 Micron Technology。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Nanya Technology
NT5AD512M16C4-JRU - DDR4 8Gb 512Mx16 Industrial SDRAM | Nanya
NT5AD512M16C4-JRU ✓ 量产中Micron Technology
MT40A512M16LY-062E AAT:E - 8Gbit DDR4 SDRAM 1.6GHz | Micron
MT40A512M16LY-062E AAT:E ✓ 量产中规格对比
| 参数 | NT5AD512M16C4-JRU | MT40A512M16LY-062E AAT:E |
|---|---|---|
| 品牌 | Nanya Technology | Micron Technology |
| 分类 | DRAM | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $83.00 | $9.20 |
| 存储器类型 | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gbit | — |
| 存储组织 | 512M x 16 | — |
| Clock Frequency | 1600 MHz (3200 Mbps data rate) | 1.6 GHz |
| CAS Latency (CL) | 22 at 1600 MHz | — |
| Supply Voltage (VDD) | 1.2 V | — |
| 封装 | 96-ball FBGA (PBGA96) | 96-FBGA (7.5 x 13.5 mm) |
| 工作温度 | -40 C to +95 C (industrial grade) | [DATA_NEEDED: operating temperature range] |
| 接口 | CMOS, DDR4 | Parallel |
| Auto Self-Refresh | Yes | — |
| Built-in Temperature Sensor | Yes | — |
| Auto Precharge | Yes | — |
| Asynchronous Reset | Yes | — |
| Data Mask (DM) | Yes | — |
| Write Leveling | Yes | — |
| Dynamic On-Chip Termination (ODT) | Yes | — |
| ZQ Calibration | Yes | — |
| CRC Function | Yes | — |
| 安装类型 | Surface Mount | Surface Mount |
| RoHS 状态 | Green Product (per Nanya product page) | Compliant |
| 存储容量 | — | 8 Gbit (1 GB) |
| Memory Organization | — | 512M x 16 |
| Access Time | — | 19 ns |
| 电源电压 | — | 1.2 V |
| Speed Grade | — | 062E |
| Package Height | — | [DATA_NEEDED: package max height] |
| MSL Rating | — | [DATA_NEEDED: moisture sensitivity level] |
| Ordering Code Suffix | — | AAT:E (temperature/package option per Micron code) |
| Moisture Packaging | — | [DATA_NEEDED: packing type for AAT:E suffix] |
| Data Rate Class | — | DDR4-3200 (062E speed bin) |