NT5AD512M16C4-JRU vs MT40A512M16TD-062E AUT:R 对比

详细并排对比 NT5AD512M16C4-JRU 出自 Nanya Technology 和 MT40A512M16TD-062E AUT:R 出自 Micron Technology。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Nanya Technology
NT5AD512M16C4-JRU NT5AD512M16C4-JRU - DDR4 8Gb 512Mx16 Industrial SDRAM | Nanya

NT5AD512M16C4-JRU - DDR4 8Gb 512Mx16 Industrial SDRAM | Nanya

NT5AD512M16C4-JRU ✓ 量产中
Micron Technology
MT40A512M16TD-062E AUT:R MT40A512M16TD-062E AUT:R - 8Gbit DDR4 SDRAM | Micron

MT40A512M16TD-062E AUT:R - 8Gbit DDR4 SDRAM | Micron

MT40A512M16TD-062E AUT:R ✓ 量产中

规格对比

参数 NT5AD512M16C4-JRU MT40A512M16TD-062E AUT:R
品牌 Nanya Technology Micron Technology
分类 DRAM Memory ICs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $83.00 $3.90
存储器类型 DDR4 SDRAM DDR4 SDRAM
Density 8 Gbit —
存储组织 512M x 16 512M x 16
Clock Frequency 1600 MHz (3200 Mbps data rate) —
CAS Latency (CL) 22 at 1600 MHz —
Supply Voltage (VDD) 1.2 V —
封装 96-ball FBGA (PBGA96) 96-FBGA (7.5 x 13 mm)
工作温度 -40 C to +95 C (industrial grade) —
接口 CMOS, DDR4 Parallel
Auto Self-Refresh Yes —
Built-in Temperature Sensor Yes —
Auto Precharge Yes —
Asynchronous Reset Yes —
Data Mask (DM) Yes —
Write Leveling Yes —
Dynamic On-Chip Termination (ODT) Yes —
ZQ Calibration Yes —
CRC Function Yes —
安装类型 Surface Mount Surface Mount
RoHS 状态 Green Product (per Nanya product page) —
存储容量 — 8 Gbit
Clock Frequency / Data Rate — 1.6 GHz
Access Time — 19 ns
电源电压 — 1.2 V
Automotive Qualification — AEC-Q100 (AUT grade)
Packaging Suffix — -R (Tape & Reel)
Speed Grade — -062E
Technology Family — DDR4 SDRAM (SDR/DDR family)
工作温度范围 — [DATA_NEEDED: operating temperature range]
Refresh Rate — [DATA_NEEDED: refresh interval spec]

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