RTAX1000SL-CQ352PROTO vs RTAX1000SL-CQ352V 对比
详细并排对比 RTAX1000SL-CQ352PROTO 出自 Microchip Technology 和 RTAX1000SL-CQ352V 出自 Microchip Technology。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Microchip Technology
RTAX1000SL-CQ352PROTO - 1M-Gate Rad-Tolerant FPGA | Microchip
RTAX1000SL-CQ352PROTO ✓ 量产中Microchip Technology
RTAX1000SL-CQ352V - 1M-Gate Rad-Tolerant FPGA | Microchip
RTAX1000SL-CQ352V ✓ 量产中规格对比
| 参数 | RTAX1000SL-CQ352PROTO | RTAX1000SL-CQ352V |
|---|---|---|
| 品牌 | Microchip Technology | Microchip Technology |
| 分类 | FPGA & CPLD | FPGA & CPLD |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.00 | $0.00 |
| Family | RTAX-S/SL Radiation-Tolerant FPGAs | RTAX-SL (RTAX-S/SL Radiation-Tolerant FPGAs) |
| Equivalent System Gates | 1,000,000 | 1,000,000 |
| Logic Cells | 18144 | 18,144 |
| CLBs | 12096 | — |
| Core Supply Voltage | 1.5 V nominal (1.425 V to 1.575 V) | — |
| Process Technology | CMOS 0.15 um | 0.15 um CMOS |
| Configuration Technology | Antifuse (one-time programmable), live at power-up | — |
| 封装 | 352-terminal ceramic metal-sealed cofired CQFP (CQ352) | 352-pin Ceramic CQFP (CQ352V) |
| 工作温度 | -55C to +125C | [DATA_NEEDED: operating temperature range] |
| Embedded Memory | Embedded SRAM with built-in FIFO control logic | Embedded SRAM with built-in FIFO control logic |
| Clock Architecture | Segmentable clocks, chip-wide highway routing | — |
| Carry Chains | Yes (arithmetic carry support) | — |
| Application Space | Space-flight systems, radiation-tolerant | — |
| Build Variant | PROTO (prototyping/engineering build) | — |
| 安装类型 | Surface Mount | Surface Mount |
| RoHS 状态 | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS compliance status] |
| Max Toggle Frequency | [DATA_NEEDED: maximum frequency] | — |
| CLBs (Logic Modules) | — | 12,096 |
| Maximum Toggle Frequency | — | 581 MHz |
| Core Voltage | — | 1.5 V |
| Programming Technology | — | Antifuse (one-time programmable) |
| Radiation Tolerance | — | Radiation-tolerant, space-flight qualified family |
| Power-Up Behavior | — | Live at power-up (non-volatile) |
| Configuration Upset Immunity | — | No SEU in configuration memory (antifuse) |
| I/O Voltage | — | [DATA_NEEDED: I/O bank voltage range] |
| Total Ionizing Dose (TID) | — | [DATA_NEEDED: TID rating in krad (Si)] |
| MSL 等级 | — | [DATA_NEEDED: moisture sensitivity level] |
| Estimated Equivalent Gates per CLB | — | [DATA_NEEDED: gates-per-CLB ratio] |