RTAX250S-1CG624V vs RTAX250SL-1CG624B 对比

详细并排对比 RTAX250S-1CG624V 出自 Microchip Technology 和 RTAX250SL-1CG624B 出自 Microchip Technology。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Microchip Technology
RTAX250S-1CG624V RTAX250S-1CG624V - 250k Gate Rad-Tolerant FPGA | Microchip

RTAX250S-1CG624V - 250k Gate Rad-Tolerant FPGA | Microchip

RTAX250S-1CG624V ✓ 量产中
Microchip Technology
RTAX250SL-1CG624B RTAX250SL-1CG624B - 250K-Gate Rad-Tolerant FPGA | Microchip

RTAX250SL-1CG624B - 250K-Gate Rad-Tolerant FPGA | Microchip

RTAX250SL-1CG624B ✓ 量产中

规格对比

参数 RTAX250S-1CG624V RTAX250SL-1CG624B
品牌 Microchip Technology Microchip Technology
分类 FPGA & CPLD FPGA & CPLD
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.00 $0.00
Equivalent System Gates 250,000 250000 gates
Configurable Logic Blocks (CLBs) 2816 —
Cell Organization 4224 cells —
Family RTAX-S Radiation-Tolerant FPGA RTAX-SL (RTAX-S/SL RadTolerant FPGAs)
Programmable Technology Antifuse (CMOS) —
Speed Grade -1 -1
Combinatorial CLB Delay (Max) 0.930 ns —
封装 624-terminal Ceramic Grid Array (CGA) 624-Pin CCGA (Ceramic Column Grid Array)
Package Code CG624 —
工作温度 -55C to +125C [DATA_NEEDED: Operating Temperature Range]
Qualification / Screening V grade (space screening) —
安装类型 Surface Mount Surface Mount
Configuration Live at power-up, single-chip —
Embedded Memory Embedded SRAM with FIFO control logic Embedded SRAM with built-in FIFO control logic
RoHS 状态 [DATA_NEEDED: RoHS status] [DATA_NEEDED: RoHS status]
Total Ionizing Dose (TID) [DATA_NEEDED: TID rating] —
Supply Voltage (Core) [DATA_NEEDED: core supply voltage] —
Logic Cells (CLBs) — 2816 CLBs
最大时钟频率 — 649 MHz
CLB Combinatorial Delay (Max) — 0.930 ns
Process Technology — 0.15 um
Core Supply Voltage — 1.5 V
Ordering Format — Box
Programming Technology — Antifuse (one-time programmable, live-at-power-up)
Maximum I/O Count — [DATA_NEEDED: I/O count for CG624 package]
Total Ionizing Dose (TID) Tolerance — [DATA_NEEDED: TID rating]

数据手册与资源

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