W25M512JVEIQ vs MX25L51245GXDI-08G 对比

详细并排对比 W25M512JVEIQ 出自 Winbond 和 MX25L51245GXDI-08G 出自 Macronix。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Winbond
W25M512JVEIQ W25M512JVEIQ - 512Mbit SPI NOR Flash 104MHz | Winbond

W25M512JVEIQ - 512Mbit SPI NOR Flash 104MHz | Winbond

W25M512JVEIQ ✓ 量产中
Macronix
MX25L51245GXDI-08G MX25L51245GXDI-08G - 512Mbit SPI NOR Flash 166MHz | Macronix

MX25L51245GXDI-08G - 512Mbit SPI NOR Flash 166MHz | Macronix

MX25L51245GXDI-08G ✓ 量产中

规格对比

参数 W25M512JVEIQ MX25L51245GXDI-08G
品牌 Winbond Macronix
分类 Memory ICs EEPROM
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $3.64 $4.20
存储器类型 FLASH - NOR Memory IC (Multichip Package) FLASH - NOR Memory IC
存储容量 512 Mbit (64 MB) 512 Mbit (64 MByte)
存储组织 64M x 8 —
接口 SPI, Dual SPI, Quad SPI —
Max Clock Frequency 104 MHz 166 MHz
Operating Voltage 3V / 3.3V —
Access Time 7 ns 8 ns
Sector Size 4KB Uniform Sector —
封装 8-WSON (8mm x 6mm) with exposed pad —
安装类型 Surface Mount Surface Mount
工作温度 [DATA_NEEDED: Operating Temperature range] -40C to +85C
Program/Erase Endurance [DATA_NEEDED: Program/Erase cycles] —
Data Retention [DATA_NEEDED: Data retention] 20 years
Write Protect Hardware /WP pin —
Hold Pin /HOLD supported —
RoHS 状态 [DATA_NEEDED: RoHS status] —
MSL 等级 [DATA_NEEDED: Moisture Sensitivity Level] —
Memory Organization — 64M x 8
Technology — FLASH - NOR
Memory Interface — SPI - Quad I/O, QPI, DTR
电源电压 — 2.7 V to 3.6 V
Write Cycle Time - Word — 60 us
Write Cycle Time - Page — 750 us
Endurance — 100,000 cycles
封装 / 外壳 — 24-CSPBGA (6x8)
Supplier Device Package — 24-CSPBGA (6x8)
Memory Format — FLASH

数据手册与资源

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