YZ48G16V-F9HPI-M vs MT40A512M16TB-062E:R 对比
详细并排对比 YZ48G16V-F9HPI-M 出自 Loongtion 和 MT40A512M16TB-062E:R 出自 Micron Technology。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Micron Technology
MT40A512M16TB-062E:R - 8Gb DDR4 SDRAM 3200MT/s | Micron
MT40A512M16TB-062E:R ✓ 量产中规格对比
| 参数 | YZ48G16V-F9HPI-M | MT40A512M16TB-062E:R |
|---|---|---|
| 品牌 | Loongtion | Micron Technology |
| 分类 | DRAM | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $8.60 | $60.00 |
| 存储器类型 | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gb | — |
| 存储组织 | 512M x 16 | — |
| 数据速率 | 3200 MT/s | 3200 MT/s |
| 封装 | FBGA96 | 96-FBGA (7.5x13 mm) |
| 工作温度范围 | -40°C to +85°C | — |
| 电源电压 | 1.2 V | — |
| 接口 | DDR4 | Parallel |
| 引脚数量 | 96 | — |
| 安装类型 | Surface Mount | — |
| RoHS 状态 | Compliant | Compliant |
| Industrial Grade | Yes | — |
| Compatible with | Samsung K4A8G165WC-BCWE, Micron MT40A512M16JY-07EAIT:B | — |
| 数据总线宽度 | 16 bits | 16 bits |
| Refresh | Auto-refresh | — |
| 存储容量 | — | 8 Gbit (512M x 16) |
| Clock Frequency | — | 1600 MHz |
| CAS 延迟 | — | 22 |
| Supply Voltage (VDD/VDDQ) | — | 1.2V ±60mV |
| VPP Voltage | — | 2.5V (-125mV, +250mV) |
| 工作温度 | — | 0°C to +95°C |
| Refresh Time | — | 8192 cycles (64ms at -40°C to 85°C, 32ms at >85°C to 95°C, 16ms at >95°C) |
| I/O Type | — | 1.2V pseudo open-drain |
| 特性 | — | Auto self-refresh, auto precharge, write leveling, CRC, dynamic on-chip termination, ZQ calibration |