2SC4617TL - 50V 150mA NPN BJT | ROHM | SOT-416
料号： 2SC4617TL ✓ 量产中| 数量 | 单价 | 小计 |
|---|---|---|
| 1 | $0.38 | $0.38 |
| 10 | $0.32 | $3.20 |
| 100 | $0.24 | $24.00 |
| 500 | $0.19 | $95.00 |
| 1,000 | $0.15 | $150.00 |
2SC4617TL 概述
A bipolar junction transistor (BJT) is a three-terminal semiconductor device consisting of two PN junctions (emitter-base and collector-base) that uses a small base current to control a much larger collector current. The NPN variant conducts when the base is pulled above the emitter, with electrons as the majority carriers. Small-signal BJTs sit in the signal-chain hierarchy below power transistors and above op-amps in discrete form, serving as the workhorse amplification and switching element in analog front-ends.
Key features of the 2SC4617TL include the low Cob value of 2.0pF (typical), which improves high-frequency response and reduces signal loss at RF; the 180MHz transition frequency supporting wideband amplifier designs; the compact SOT-416 (EMT3) footprint enabling high-density PCB placement; and a total power dissipation rating of 150mW in free air. Its complementary PNP partner is the 2SA1774.
The device uses a standard planar-epitaxial silicon NPN die. Its low Cob makes it especially suitable for applications requiring minimal capacitive loading, such as mixer and oscillator stages in RF receivers and high-impedance analog signal paths. The SOT-416 package offers an exposed lead-frame pad that aids thermal dissipation despite the small footprint.
Typical applications include general-purpose small-signal amplification, RF mixer/oscillator stages, audio preamplifier front-ends, DC-DC converter driver stages, switching circuits in industrial control, and portable/handheld consumer electronics. The 50V VCEO provides adequate headroom for 12V and 24V bus-driven signal chains.
When using the 2SC4617TL, observe the 150mW power dissipation limit and ensure the base bias network is sized for the target IC. For switching applications, choose base resistor values that provide sufficient overdrive (typically IB = IC/10) to guarantee saturation across temperature.
This page synthesizes distributor pricing, drop-in alternatives, and design notes for engineers sourcing the 2SC4617TL, complementing the manufacturer datasheet with practical selection guidance.
直接替换替代料： 2SC4617TL ——相同封装，引脚兼容。需要 PCB 改动的不同封装料号已排除。
快速对比工具——选择替代料号进行并排对比：
2SC4617TLR
✅ 直接替换📋 参考替代料（不在目录中）
2SC4617TLQ
✅ 直接替换📋 参考替代料（不在目录中）
2SC4617EBTLS
✅ 直接替换📋 参考替代料（不在目录中）
2SC4617G
✅ 直接替换📋 参考替代料（不在目录中）
DTC114EE
✅ 直接替换📋 参考替代料（不在目录中）
2SC4617TL 最大额定值与电气特性
| Manufacturer | ROHM Semiconductor |
| Part Number | 2SC4617TL |
| 晶体管类型 | NPN Bipolar Junction Transistor (BJT) |
| Polarity | NPN |
| Application | General Purpose Small Signal Amplifier |
| 集电极-发射极电压（Vceo） | 50 V |
| 集电极电流（Ic） | 150 mA |
| Power Dissipation (PD) | 150 mW |
| 过渡频率（ft） | 180 MHz |
| Collector-Base Capacitance (Cob) | 2.0 pF (typical) |
| 封装 / 外壳 | SOT-416 (EMT3) |
| 安装类型 | Surface Mount |
| 引脚数 | 3 |
| Complementary PNP Part | 2SA1774 |
| RoHS 状态 | Compliant |
2SC4617TL 引脚配置
| 引脚 1 | Base — Base control terminal (B) |
| 引脚 2 | Emitter — Emitter terminal (E) |
| 引脚 3 | Collector — Collector terminal (C) |
典型应用
2SC4617TL 适用于 6 应用s: RF Mixer/Oscillator Stage, Audio Preamplifier Front-End, DC-DC Converter Driver Stage, General-Purpose Switching Circuit, Portable Consumer Electronics, Test and Measurement Front-End.
RF Mixer/Oscillator Stage
The 2SC4617TL is well suited for RF mixer and local-oscillator stages in low-power wireless receivers operating up to VHF. Its 2.0pF typical collector-base capacitance (Cob) is the key advantage: lower Cob reduces signal loss across the LO port and improves conversion gain in passive and active mixer topologies. Combined with an fT of 180MHz, the transistor delivers useful gain above 100MHz while keeping noise figure low. In a typical superhet receiver, the 2SC4617TL can be biased at IC=5-10mA for optimum noise-versus-gain trade-off, with the emitter connected through a small RF choke or resistor network.
推荐
Audio Preamplifier Front-End
In audio preamplifier circuits, the 2SC4617TL provides a low-noise NPN gain stage with the headroom enabled by its 50V VCEO rating. The transistor is well-suited for microphone preamps, magnetic-cartridge phono stages, and line-level buffers where its 150mW power dissipation comfortably handles signal swings up to several volts. Its low Cob of 2.0pF reduces capacitive loading on high-impedance source signals, preserving high-frequency audio content. The complementary 2SA1774 enables push-pull or cascode topologies in higher-end audio designs.
推荐
DC-DC Converter Driver Stage
The 2SC4617TL serves as a compact driver transistor for low-power DC-DC converters such as boost, buck, and SEPIC topologies operating from 5V to 24V rails. Its 50V VCEO provides comfortable headroom for 24V industrial bus applications, and the 180MHz fT enables fast switching edges that minimize transition losses in the converter. The 150mA IC rating suits driver-stage service where it switches the primary power transistor rather than delivering full load current. The SOT-416 footprint keeps the driver section small in space-constrained power modules.
推荐
General-Purpose Switching Circuit
The 2SC4617TL is widely deployed as a general-purpose saturated switch in industrial control, instrumentation, and interface circuits. The transistor can switch loads up to 150mA with a forced beta of 10 (IB = IC/10) ensuring saturation across the -40C to +125C operating range. Typical uses include relay drivers (with appropriate current-limiting resistor), LED drivers, level shifters between 3.3V and 12V logic domains, and signal inversion. Its low Cob helps prevent false triggering in noise-sensitive switching applications.
推荐
Portable Consumer Electronics
In battery-powered portable electronics, the 2SC4617TL's small SOT-416 footprint and 150mW dissipation rating enable compact, energy-efficient signal conditioning. The transistor can implement low-current voltage references, microphone bias generators, and signal-level shifters in wireless earbuds, fitness bands, and remote controls. The 50V VCEO provides robustness against ESD transients and inductive kickback in headphone-jack detection circuits, while the 180MHz fT supports clean audio and short-range RF signal handling.
推荐
Test and Measurement Front-End
The 2SC4617TL fits well in test and measurement equipment front-ends such as oscilloscope input buffers, signal-generator output stages, and probe-compensation networks. Its low Cob of 2.0pF minimizes the capacitive loading on the signal under test, preserving waveform fidelity at high frequencies. The 50V VCEO accommodates signal swings up to +/-15V in instrumentation circuits, while the SOT-416 package enables dense multi-channel layouts in modular instruments. The complementary 2SA1774 supports differential buffer topologies in precision measurement chains.
推荐
推荐产品汇总
工程参考数据： 2SC4617TL ——对比、设计指导和合规信息。
选型指南
与替代料对比
| 参数 | 本产品 | 2SC4617TLR | 2SC4617TLQ | 2SC4617EBTLS | 2SC4617G | DTC114EE |
|---|---|---|---|---|---|---|
| Brand | ROHM Semiconductor | ROHM Semiconductor | ROHM Semiconductor | ROHM Semiconductor | onsemi | ROHM Semiconductor |
| Package | SOT-416 (EMT3) | SOT-416 (EMT3) | SOT-416 (EMT3) | SOT-416 (EMT3) | SC-75 | SOT-416 (EMT3) |
| VCEO (V) | 50 V | 50 V | 50 V | 50 V | 50 V | 50 V |
| Collector Current (mA) | 150 mA | 150 mA | 150 mA | 150 mA | 100 mA | 100 mA |
| Power Dissipation (mW) | 150 mW | 150 mW | 150 mW | 150 mW | 125 mW | 150 mW |
| Polarity | NPN | NPN | NPN | NPN | NPN | NPN (digital w/ R-base) |
关键差异点
- Lowest Cob in same-package alternatives （对比 Generic 2N3904-class transistors in SOT-23)
- Compact SOT-416 footprint vs larger SOT-23 （对比 2SC4617G in SC-75)
- High VCEO headroom for 24V industrial buses （对比 DTC114EE digital NPN)
设计说明
The 2SC4617TL is rated at 150mW power dissipation in free air on the ROHM-recommended test board. Estimated: at TA = 25C with theta_JA around 500 C/W (typical for SOT-416), a 1mA collector current at VCE = 30V still requires attention to board layout. For continuous operation above 100mW, use a copper-pour heatsink on the collector pad to keep junction temperature below 150C. Derate linearly above 25C ambient per the published dissipation curve.
The SOT-416 (EMT3) land pattern should follow ROHM's recommended footprint with the collector pad (pin 3) on a continuous copper pour to provide both thermal relief and ground-reference integrity. Place the base-bias resistors within 3mm of the base pin to minimize parasitic inductance, and route the emitter directly to a ground plane via for best high-frequency performance. Keep digital switching traces away from the base network to avoid injected noise.
Do not confuse the SOT-416 (EMT3) pinout with the SOT-23 pinout of similar-looking small-signal transistors. While some SOT-23 parts share pin-compatible functions, the 2SC4617TL uses Pin 1 = Base, Pin 2 = Emitter, Pin 3 = Collector (B-E-C). Driving the wrong pin as the base will damage the transistor. Always cross-check the ROHM datasheet pinout diagram against the PCB silkscreen before powering up. Also avoid exceeding VCEO = 50V even during transients - the absence of an avalanche rating means inductive kickback can permanently damage the junction.
合规信息
RoHS and REACH compliance per ROHM product page. Lead-free and halogen-free per the SOT-416 (EMT3) packaging specification. Not AEC-Q100 qualified - this is a commercial/industrial-grade small-signal BJT.
