AFT09S282NR3 - 80W 720-960MHz RF LDMOS Transistor | NXP
料号： AFT09S282NR3 ✓ 量产中| 数量 | 单价 | 小计 |
|---|---|---|
| 1 | $89.5 | $89.50 |
| 10 | $82.1 | $821.00 |
| 100 | $75.4 | $7,540.00 |
| 500 | $69.8 | $34,900.00 |
| 1,000 | $65.2 | $65,200.00 |
AFT09S282NR3 概述
An RF power LDMOS transistor is a laterally diffused metal-oxide-semiconductor power device optimized for high-frequency, high-power amplification. Within the broader taxonomy, it sits at LDMOS -> RF power MOSFET -> power transistor -> discrete semiconductor. LDMOS technology dominates cellular base station power amplification because it offers high gain, high efficiency, and excellent thermal performance compared to silicon bipolar or GaAs alternatives of similar cost.
The NXP Airfast AFT09S282NR3 family key features include integrated electrostatic discharge (ESD) protection, an internal input matching network that simplifies board-level design, broadband response across the 720-960 MHz cellular bands, and a high gain-flatness profile. The thermally efficient OM-780-2 ceramic package with a flanged or non-flanged lead offers theta_JC values consistent with extended duty-cycle operation.
Architecturally, this is an N-channel enhancement-mode lateral MOSFET. The lateral structure and thick metal field plates reduce on-state losses and improve ruggedness into mismatched loads (VSWR tolerance), enabling reliable operation in Doherty amplifier configurations used at the final stage of macro-cell base stations.
Typical applications for the AFT09S282NR3 include single-ended or Doherty power amplifiers in 4G LTE and multi-carrier GSM/EDGE base stations operating in the 900 MHz cellular band (GSM900, cellular 850/900, LTE Band 5/8). Designers also use it for digital video broadcast transmitters and industrial RF heating sources at sub-GHz frequencies.
When designing with this part, pay particular attention to thermal management. At full 80 W CW RF output in a Doherty configuration the device dissipates considerable heat; use a copper-molybdenum or copper-tungsten heatsink with proper thermal interface material to keep the junction within the safe operating envelope.
This page synthesizes distributor pricing, same-family drop-in alternatives, and Doherty amplifier design notes not found in the manufacturer datasheet - a starting point for engineers evaluating NXP's AFT09S282N family.
直接替换替代料： AFT09S282NR3 ——相同封装，引脚兼容。需要 PCB 改动的不同封装料号已排除。
快速对比工具——选择替代料号进行并排对比：
AFT09S282NR3-REEL
✅ 直接替换📋 参考替代料（不在目录中）
AFT09MP055NR1
✅ 直接替换📋 参考替代料（不在目录中）
AFT09S282NR3 最大额定值与电气特性
| Manufacturer | NXP Semiconductors |
| Product Family | Airfast RF Power LDMOS |
| 晶体管类型 | N-Channel Enhancement-Mode Lateral MOSFET |
| Frequency Range | 720 MHz to 960 MHz |
| Output Power (Avg.) | 80 W |
| Drain-Source Voltage (VDSs) | 70 V |
| Operating Drain Voltage | 28 V (nominal) |
| Power Gain | 20 dB at 960 MHz |
| Gate Bias Current (typical) | 1.4 A |
| Test Frequency | 960 MHz |
| 封装 | OM-780-2 (NI-780S-style ceramic) |
| 引脚数量 | 3 |
| 安装类型 | Surface Mount |
| Technology | LDMOS |
AFT09S282NR3 引脚配置
| 引脚 1 | Gate — Gate bias input |
| 引脚 2 | Drain / Flange — Drain output and thermal mounting flange (exposed pad) |
| 引脚 3 | Source — Source / ground return |
安全工作区 (DC, derived from VDSs limit)
典型应用
AFT09S282NR3 适用于 7 应用s: GSM/LTE 900 MHz Macro Base Station Final-Stage PA, Multi-Carrier GSM/EDGE Power Amplifier, Digital Video Broadcasting (DVB-T/H) Transmitter, Doherty Main/Peaking Amplifier (Two-Way), Industrial RF Heating / Plasma Generator, Public Safety / Private LTE (Band 8) Repeater, LDMOS Evaluation/Reference Design Platform.
GSM/LTE 900 MHz Macro Base Station Final-Stage PA
The AFT09S282NR3 delivers 80 W average output across 720-960 MHz from a 28 V rail, making it a primary candidate for the final stage of 900 MHz GSM and LTE Band 5/8 macro-cell base station power amplifiers. Designers typically deploy it in single-ended or two-way Doherty configurations to maximize efficiency in multi-carrier W-CDMA signals, where the 20 dB gain simplifies driver-stage requirements and the wideband response accommodates multi-operator band allocations within the same PA module.
推荐
Multi-Carrier GSM/EDGE Power Amplifier
For multi-carrier GSM and EDGE PA applications, the AFT09S282NR3's 80 W average rating with 28 V operation provides the headroom to combine several carriers through a single final device while staying within thermal limits. The OM-780-2 ceramic package with its low theta_JC enables the device to sink the additional dissipation that multi-carrier operation imposes. Per NXP Airfast datasheets, similar parts in this family are routinely used in 4+ carrier combiner designs.
推荐
Digital Video Broadcasting (DVB-T/H) Transmitter
The 720-960 MHz band overlaps with DVB-T/H sub-bands used in some regional digital video broadcast deployments, where the AFT09S282NR3's broadband flatness suits OFDM-modulated signals with high PAPR. Its 20 dB gain at 960 MHz allows simplified driver chains, while 70 V VDSs margin protects against line mismatch transients on long antenna feeders typical of broadcast installations. Mounting on the OM-780-2 flange to a copper heatsink addresses continuous-duty thermal load.
推荐
Doherty Main/Peaking Amplifier (Two-Way)
The AFT09S282NR3 is a textbook choice for a two-way Doherty amplifier at 900 MHz, where it serves as both the main amplifier (always on) and the peaking amplifier (turning on at the 6 dB back-off point). NXP's Airfast datasheet family notes that this generation delivers the gain and ruggedness required for the impedance-inverting network of a Doherty combiner. Designers typically use one part per amplifier leg, achieving >40% efficiency at 8 dB back-off.
推荐
Industrial RF Heating / Plasma Generator
Industrial RF heating applications operating near 900 MHz can leverage the AFT09S282NR3's continuous-wave capability and 80 W average output for plasma generation or dielectric heating of materials. The 70 V VDSs rating and rugged construction tolerate the load mismatches encountered when heating materials of varying dielectric constants, while the OM-780-2 package's thermal performance supports continuous industrial duty cycles with proper heatsinking.
推荐
Public Safety / Private LTE (Band 8) Repeater
Band 8 private LTE networks for utilities, mining, and public safety rely on 900 MHz repeaters where the AFT09S282NR3 functions as the final stage. Its 80 W average output extends the coverage radius of fixed repeaters in tunnels, large campuses, or rural backhaul, and the Airfast family's broadband flatness simplifies band-pass filtering. Continuous-duty operation in temperature-uncontrolled enclosures requires careful heatsinking to the OM-780-2 flange.
推荐
LDMOS Evaluation/Reference Design Platform
RF design teams building reference platforms for the 900 MHz cellular band often standardize on the AFT09S282NR3 as the baseline power device because of its thorough characterization, broad application note coverage, and easy-to-mount OM-780-2 package. The same evaluation board can be retuned across 720-960 MHz, allowing a single test fixture to validate multiple carrier-class designs. XAIPART's reference design catalog includes footprints tuned to this pinout.
推荐
推荐产品汇总
工程参考数据： AFT09S282NR3 ——对比、设计指导和合规信息。
选型指南
与替代料对比
| 参数 | 本产品 | AFT09S282NR3-REEL | AFT09MP055NR1 |
|---|---|---|---|
| Brand | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors |
| Package | OM-780-2 | OM-780-2 | OM-780-2 |
| Output Power (Avg.) | 80 W | 80 W (same die) | 55 W (-31%) |
| Drain Supply Voltage | 28 V | 28 V | 12.5 V |
| Frequency Range | 720-960 MHz | 720-960 MHz | 764-941 MHz |
| Technology | LDMOS | LDMOS | LDMOS |
| Pin Count | 3 | 3 | 3 |
关键差异点
- Pin-to-pin alternative with 28 V / 80 W in production-volume tape format （对比 AFT09S282NR3-REEL)
- 30% higher output power at 28 V in same footprint （对比 AFT09MP055NR1)
设计说明
Estimated: At full 80 W CW RF output with 50% DC-to-RF efficiency, the AFT09S282NR3 dissipates roughly 80 W of heat through the OM-780-2 ceramic flange. Per the NXP AFT09S282N datasheet the ceramic flange achieves a low theta_JC suitable for direct mounting to a copper or copper-molybdenum heatsink with a thin thermal interface material (TIM) layer. For continuous multi-carrier operation, target junction temperature below 200 degrees C by using at least 1 square inch of copper spreader and forced air if ambient exceeds 50 degrees C.
The OM-780-2 ceramic package has minimal lead inductance and is intended for mounting on a copper-clad PCB carrier that bolts to the system heatsink. Per NXP application notes for Airfast devices, the gate and drain leads should connect via microstrip transmission lines on a low-loss substrate (Rogers RO4350B or similar) with characteristic impedances matching the device's 50-ohm interface. Place DC blocking and bypass capacitors as close to the gate and drain leads as possible to suppress low-frequency oscillation modes.
Per the NXP datasheet, the absolute maximum drain-source voltage is 70 V. Inductive kickback from the output matching network during rapid load transients (antenna disconnection, lightning nearby) can briefly exceed VDSs and damage the device. Always include a drain transient suppressor (TVS diode or RC snubber network) sized for the matching network stored energy. Also ensure the gate bias is applied before the drain supply to avoid potentially destructive forward biasing of the gate-drain diode.
Estimated: For 900 MHz PCB layouts based on the OM-780-2 footprint, keep the drain bond-wire/lead transition as short as physically possible. Per NXP Airfast datasheet recommendations, the gate-side microstrip should be at least 2x substrate thickness away from the drain-side microstrip to prevent unwanted feedback that can destabilize the amplifier. Use multiple ground via fences around the RF traces tied to the package flange ground for repeatable performance.
合规信息
RoHS/REACH compliance status not explicitly stated in the verified web data excerpt; marked unknown pending manufacturer datasheet verification. The OM-780-2 ceramic package is by construction lead-free in plating. AEC-Q100 not applicable - this is an RF power transistor, not an automotive-grade IC.
