FDG6332C - 20V N&P-Channel PowerTrench MOSFET | onsemi SC-88
料号： FDG6332C ✓ 量产中| 数量 | 单价 | 小计 |
|---|---|---|
| 1 | $0.42 | $0.42 |
| 10 | $0.36 | $3.60 |
| 100 | $0.27 | $27.00 |
| 500 | $0.21 | $105.00 |
| 1,000 | $0.18 | $180.00 |
| 3,000 | $0.14 | $420.00 |
FDG6332C 概述
A MOSFET array is an integrated semiconductor device that places two or more discrete MOSFETs in a single chip-scale package, allowing complementary switching (high-side plus low-side, or N+P fetches in a half-bridge) without the board area of two separate SOT-23 or SOT-363 parts. MOSFET arrays occupy a place in the hierarchy: power MOSFET, power semiconductor, discrete semiconductor, and ultimately integrated circuit packaging. They are commonly used in load switching, level shifting, and DC-DC converter synchronous stages where board real estate is at a premium.
Key differentiating features of the FDG6332C include its monolithic dual-channel topology, ultra-small SC-88 outline (approximately 2.0 × 2.1 mm), 20 V VDS rating suitable for 5 V and 12 V buses, low RDS(on) for both polarities via PowerTrench cell design, and a logic-level gate threshold compatible with 1.8 V and 3.3 V microcontrollers. The complementary N+P channel arrangement allows a single part to perform synchronous-rectifier, inverter, or H-bridge functions in miniature footprints.
Architecturally, the FDG6332C uses a trench-gate structure that maximizes channel density per unit silicon area, reducing both on-resistance and gate charge. The N-channel and P-channel dies are independently bonded out to separate source pins, eliminating the need to parallel discrete parts and reducing parasitic source inductance that would otherwise degrade switching edge rates.
Typical applications include portable and battery-powered load switching (USB VBUS switches, lithium-ion protection circuits, OLED display drivers), low-voltage DC-DC synchronous buck converters in consumer and IoT devices, signal-level shifters between MCUs and higher-voltage loads, and small motor or relay drivers in white goods and personal electronics.
When designing with the FDG6332C, pay attention to gate-drive headroom and to PCB thermal copper area: 415 °C/W RθJA means continuous 300 mW is only attainable with substantial copper pours or with pulsed operation where average power remains low. Verify that the chosen gate drive can fully enhance both channels at the intended VGS.
This page synthesizes distributor pricing, package-matched equivalents, thermal estimates, and design notes that supplement the manufacturer datasheet.
直接替换替代料： FDG6332C ——相同封装，引脚兼容。需要 PCB 改动的不同封装料号已排除。
本系列中的变体
可与以下型号直接替换的同系列型号： FDG6332C （相同外形与封装尺寸） ——差异在于 Configuration, Manufacturer, Operating Temperature Range, Package.
快速对比工具——选择替代料号进行并排对比：
FDG6332C-F085
✅ 直接替换✓ 有现货
$0.17 / 个
查看数据手册 →FDG6332C-PG
✅ 直接替换📋 参考替代料（不在目录中）
FDG6320C
✅ 直接替换📋 参考替代料（不在目录中）
FDG6331C
✅ 直接替换📋 参考替代料（不在目录中）
SI3900DV
✅ 直接替换📋 参考替代料（不在目录中）
FDG6332C 最大额定值与电气特性
| Manufacturer | onsemi (formerly Fairchild Semiconductor) |
| Product Type | MOSFET Array (N-channel and P-channel, complementary) |
| Process Technology | PowerTrench |
| Drain-to-Source Voltage (VDS) | 20 V |
| N-Channel Continuous Drain Current (ID) | 700 mA |
| P-Channel Continuous Drain Current (ID) | 600 mA |
| Total Package Power Dissipation (PD) | 300 mW |
| Thermal Resistance, Junction-to-Ambient (RθJA) | 415 °C/W (still air, JEDEC PCB) |
| 封装 | SC-88 (SC-70-6), 6-pin |
| 安装类型 | Surface Mount |
| 工作温度范围 | -55 °C to +150 °C (TJ max) |
| RoHS 状态 | Compliant |
| MSL 等级 | 1 |
| Configuration | Dual independent MOSFETs (N + P) |
FDG6332C 引脚配置
| 引脚 1 | S1 — Source, N-channel MOSFET 1 |
| 引脚 2 | G1 — Gate, N-channel MOSFET 1 |
| 引脚 3 | D2 — Drain, P-channel MOSFET 2 |
| 引脚 4 | S2 — Source, P-channel MOSFET 2 |
| 引脚 5 | G2 — Gate, P-channel MOSFET 2 |
| 引脚 6 | D1 — Drain, N-channel MOSFET 1 |
FDG6332C 功率降额曲线
FDG6332C 功率降额曲线
典型应用
FDG6332C 适用于 6 应用s: USB VBUS Load Switch, Lithium-Ion Battery Protection (Charge/Discharge FET), Synchronous Buck DC-DC Converter (Low Power), OLED Display Power Switching, IoT Sensor Node Power Gating, Logic Level Shifter / Signal Switch.
USB VBUS Load Switch
The FDG6332C's N-channel 700 mA rating comfortably exceeds USB 2.0 high-power 500 mA, while the 20 V VDS gives ample margin above the 5 V VBUS rail. The P-channel section serves as a low-RDS(on) high-side disconnect switch, enabling software-controlled power gating for battery saving. PowerTrench cell geometry keeps conduction loss under 100 mW low at 500 mA load. Add an SMBJ5.0A TVS across VBUS for ESD, and use 100 kΩ gate pull-down resistors to guarantee off-state during MCU reset.
推荐
Lithium-Ion Battery Protection (Charge/Discharge FET)
The FDG6332C integrates complementary channels in a 2.0 × 2.1 mm SC-88 outline, replacing two discrete SOT-23 MOSFETs and freeing PCB real estate for the protection IC and sense resistors. The P-channel section handles low-side discharge switching up to 600 mA, while the N-channel section handles high-side charge-path control up to 700 mA. Verify that the package's 300 mW / 415 °C/W thermal envelope allows the chosen copper pour to keep Tj below 125 °C in continuous operation.
推荐
Synchronous Buck DC-DC Converter (Low Power)
In a 5 V to 3.3 V or 5 V to 1.8 V synchronous buck converter delivering up to 500 mA, the FDG6332C supplies both high-side and low-side switches in a single chip. The PowerTrench process keeps gate charge low, reducing switching losses at 500 kHz to 1 MHz switching frequencies typical of small point-of-load regulators. Pay close attention to dead-time control between the N-channel and P-channel gates to avoid cross-conduction; the onsemi datasheet's switching characteristics curves guide safe timing.
推荐
OLED Display Power Switching
Portable displays use the FDG6332C to switch the OLED panel's AVDD and ELVSS rails under GPIO control, eliminating the always-on quiescent current of linear supplies. The 20 V VDS rating covers typical OLED driver supplies up to 15 V, and the 700 mA / 600 mA current envelope handles inrush when the panel's decoupling caps charge. The SC-88 outline places the switch adjacent to the OLED connector, minimizing loop area and radiated emissions.
推荐
IoT Sensor Node Power Gating
Battery-powered IoT nodes such as wearables and wireless sensors use the FDG6332C to duty-cycle power to sensors, BLE radios, and environmental ICs, reducing average quiescent draw to single-digit microamps between measurements. The 700 mA N-channel supports inrush from sensor wake-up, while the complementary P-channel handles reverse-polarity-safe high-side disconnect. Pair with a nanopower MCU to maximize battery life on coin-cell or Li-Po chemistries.
推荐
Logic Level Shifter / Signal Switch
Beyond power switching, the FDG6332C's N-channel can serve as a low-resistance analog switch for 1.8 V to 3.3 V level shifting when driven from an MCU GPIO. With RDS(on) under 1 Ω typical at VGS = 4.5 V (per the PowerTrench process claim), the switch adds minimal distortion to high-speed signals. This is particularly useful for I2C level translation or UART muxing in mixed-voltage mixed-signal designs.
推荐
推荐产品汇总
工程参考数据： FDG6332C ——对比、设计指导和合规信息。
选型指南
与替代料对比
| 参数 | 本产品 | FDG6332C-F085 | FDG6332C-PG | FDG6320C | FDG6331C | SI3900DV |
|---|---|---|---|---|---|---|
| Package | SC-88 (SC-70-6) | SC-88 (SC-70-6) - same | SC-88 (SC-70-6) - same | SC-88 (SC-70-6) - same | SC-88 (SC-70-6) - same | TSOP-6 (compatible land pattern) - same |
| Brand | onsemi | onsemi | onsemi | onsemi | onsemi | Vishay Intertechnology |
| Topology | Dual N + P channel | Dual N + P channel - same | Dual N + P channel - same | Dual N + P channel - same | Dual N + P channel - same | Dual N + P channel - same |
| VDS Max | 20 V | 20 V | 20 V | 20 V | 20 V | 20 V |
| Package Power Dissipation | 300 mW | 300 mW | 300 mW | 300 mW | 300 mW | 300 mW (TSOP-6) |
| Automotive Qualified (AEC-Q101) | No | Yes | No | No | No | No |
关键差异点
- Automotive-grade drop-in option exists in the same SC-88-6 footprint （对比 FDG6332C-F085)
- Complementary N+P topology in a single chip （对比 Discrete dual SOT-23 MOSFETs)
- Drop-in compatible with Vishay SI3900DV in similar TSOP-6 land pattern （对比 SI3900DV (Vishay))
设计说明
Estimated: the FDG6332C's RθJA of 415 °C/W (per the onsemi datasheet, still-air JEDEC PCB) combined with 300 mW maximum package dissipation yields a 124 °C junction-temperature rise above ambient. In continuous high-current switching, designers must place the SC-88 land pads on at least 100 mm² of copper pour or reduce switching duty cycle to keep Tj below 125 °C. Pulsed operation relaxes thermal constraints proportionally.
Use 100 kΩ gate pull-down resistors on both N-channel and P-channel gates to guarantee off-state during MCU reset or brownout. Place input bulk capacitance close to the source pins and route the high-current drain path on wide, short traces to minimize parasitic inductance. The SC-88-6 outline has limited copper area on pins 4 and 5, so stitch vias into an inner ground plane for the P-channel source return path.
Do not exceed 20 V VDS on either channel - inductive loads such as small DC motors can generate flyback transients above this rating during switch-off; add a flyback diode or TVS across the load. Ensure gate drive voltage fully enhances the P-channel: at VGS = -4.5 V the FDG6332C achieves datasheet RDS(on), but at -1.8 V typical of 1.8 V MCUs the device operates in linear mode and dissipates excessive power.
合规信息
RoHS and lead-free per onsemi product family standards. The FDG6332C is not AEC-Q100 qualified; the FDG6332C-F085 variant is AEC-Q101 qualified for automotive.
