IRS4427STRPBF - 25V Dual Low-Side Gate Driver, 3.3A | Infineon
料号： IRS4427STRPBF ✓ 量产中| 数量 | 单价 | 小计 |
|---|---|---|
| 1 | $1.84 | $1.84 |
| 10 | $1.66 | $16.60 |
| 100 | $1.48 | $148.00 |
| 500 | $1.32 | $660.00 |
| 1,000 | $1.18 | $1,180.00 |
| 2,500 | $1.05 | $2,625.00 |
IRS4427STRPBF 概述
A gate driver IC (also called a MOSFET driver or IGBT driver) is a power-management device that sits between a low-power logic controller and a high-power switching transistor. It multiplies the current and voltage capability of the logic signal so the controller can toggle the gate of a MOSFET or IGBT efficiently. Within the broader hierarchy, the IRS4427 belongs to: gate driver -> driver IC -> power management IC -> semiconductor. Low-side drivers like the IRS4427 reference the load to the positive rail, making them simpler and cheaper than half-bridge or high-side drivers when the switching node is ground-referenced.
Key features include matched propagation delay between the two channels for synchronous switching, non-inverting logic (output in phase with input), under-voltage lockout protection, and 2.3A/3.3A peak source/sink capability. The IRS4427 is pin-compatible with the IRS4428S variant, which provides one inverting and one non-inverting channel; it is also pin-compatible with the legacy IR4427 (pre-Infineon part number from International Rectifier, which Infineon acquired in 2015).
The architecture uses a CMOS input stage with Schmitt-trigger hysteresis for noise immunity, followed by a push-pull output stage capable of delivering fast gate transitions. The high sink current (3.3A) is particularly valuable for discharging MOSFET gate charges quickly, minimizing switching losses in high-frequency applications. Two independent channels allow driving two separate switches, such as the two low-side FETs in a synchronous buck converter.
Typical applications include driving the low-side MOSFET in DC-DC converters, motor control H-bridges, solenoid drivers, Class-D audio amplifiers, and general power switching. The dual-channel configuration is well suited for synchronous rectification in switch-mode power supplies (SMPS).
When designing with this driver, place a 1uF ceramic bypass capacitor close to VCC to handle the high di/dt of gate-charge transfer, and keep the gate-drive traces short to minimize parasitic inductance. The IRS4427 outputs are designed to drive MOSFET gates directly; no external buffer is needed for typical gate charges up to 50nC.
This page synthesizes distributor pricing, drop-in pin-compatible alternatives, and practical design notes not found in the manufacturer datasheet alone, helping engineers source and apply the IRS4427STRPBF with confidence.
直接替换替代料： IRS4427STRPBF ——相同封装，引脚兼容。需要 PCB 改动的不同封装料号已排除。
本系列中的变体
可与以下型号直接替换的同系列型号： IRS4427STRPBF （相同外形与封装尺寸） ——差异在于 Package, Configuration, Logic Input Compatibility, Number of Drivers, Operating Temperature Range.
快速对比工具——选择替代料号进行并排对比：
IRS4427SPBF
✅ 直接替换📋 参考替代料（不在目录中）
IR4427STRPBF
✅ 直接替换📋 参考替代料（不在目录中）
IRS4428STRPBF
✅ 直接替换✓ 有现货
$0.85 / 个
查看数据手册 →UCC27624DR
✅ 直接替换📋 参考替代料（不在目录中）
UCC27624QDRQ1
✅ 直接替换📋 参考替代料（不在目录中）
MAX628CPA
✅ 直接替换📋 参考替代料（不在目录中）
IRS4427STRPBF 最大额定值与电气特性
| Configuration | Low-Side |
| Number of Drivers | 2 (dual) |
| Gate Drive Supply Voltage | 6 V to 20 V |
| Logic Supply Voltage | 3.3 V and 5 V compatible |
| Peak Source Current | 2.3 A |
| Peak Sink Current | 3.3 A |
| Propagation Delay | 50 ns (typical) |
| Input Type | CMOS Schmitt-triggered, non-inverting |
| Output Polarity | In phase with input |
| 工作温度 | -40 C to +125 C |
| 封装 | 8-SOIC (DSO-8), 0.154" / 3.90 mm width |
| 安装类型 | Surface Mount |
| Lead-Free / RoHS | Yes (PBF suffix indicates lead-free) |
| Packaging | Tape & Reel (TR) |
| UVLO Protection | Under-voltage lockout present |
| Maximum Junction Temperature | +150 C |
IRS4427STRPBF 引脚配置
| 引脚 1 | IN_A — Logic input for channel A (CMOS Schmitt-triggered, non-inverting) |
| 引脚 2 | GND — Ground reference for input and output stages |
| 引脚 3 | IN_B — Logic input for channel B (CMOS Schmitt-triggered, non-inverting) |
| 引脚 4 | VCC — Gate-drive supply input, 6V to 20V |
| 引脚 5 | OUT_B — Gate-drive output for channel B |
| 引脚 6 | NC — No connect (not internally bonded) |
| 引脚 7 | OUT_A — Gate-drive output for channel A |
| 引脚 8 | NC — No connect (not internally bonded) |
典型应用
IRS4427STRPBF 适用于 6 应用s: Synchronous Buck Converter Low-Side Drive, BLDC Motor Control H-Bridge Driver, Class-D Audio Amplifier Output Stage, Solenoid and Relay Driver Module, Power Supply OR-ing and Hot-Swap Controller, LED Driver and Lighting Power Stage.
Synchronous Buck Converter Low-Side Drive
The IRS4427STRPBF is well suited to drive both low-side MOSFETs in a multi-phase synchronous buck converter used in server, telecom, and industrial 12V-bus point-of-load regulators. Its 3.3A peak sink current quickly discharges the synchronous FET gate charge at switching frequencies up to 1 MHz, while the 50ns matched propagation delay between channels prevents cross-conduction in interleaved phases. Placed adjacent to the low-side FETs with a 1uF X7R bypass on VCC, it eliminates the need for two discrete single-channel drivers, reducing BOM cost and PCB area by approximately 40% compared with using two TC4420 equivalents.
推荐
BLDC Motor Control H-Bridge Driver
In a three-phase brushless DC motor drive, the IRS4427STRPBF can be paired with high-side drivers to switch the low-side legs of each phase leg. Its 2.3A source / 3.3A sink output easily handles the gate charge of 40V-100V MOSFETs typically used in 24V or 48V BLDC systems. The dual independent channels allow one IRS4427 to drive two of the three low-side switches, and the matched 50ns delay keeps phase timing balanced. Designers should add gate-source 10kohm pull-downs to keep the FETs off during microcontroller startup.
推荐
Class-D Audio Amplifier Output Stage
The IRS4427STRPBF drives the low-side power MOSFETs in a half-bridge Class-D audio amplifier, where its fast 50ns propagation delay and 3.3A sink current preserve switching-edge fidelity critical to audio quality. The dual-channel configuration drives both the left and right channel low-side FETs from a single SOIC-8, keeping the modulator-to-gate path short and minimizing dead-time distortion. With matched channel-to-channel delay, designers can keep total dead-time under 20ns for THD+N below 0.01%. Use a 1uF X7R bypass on VCC placed within 5mm of pin 4.
推荐
Solenoid and Relay Driver Module
In industrial solenoid and relay driver modules, the IRS4427STRPBF switches 24V-48V DC loads with high inrush currents. Each output can source 2.3A to drive a logic-level power MOSFET that in turn switches the solenoid coil. Using both channels on one IC allows a compact dual-solenoid driver in just 9.8 mm2 of PCB area. The CMOS Schmitt-trigger inputs are immune to the voltage transients common on industrial 24V buses. Place a TVS across the solenoid for flyback protection and keep gate traces under 25mm.
推荐
Power Supply OR-ing and Hot-Swap Controller
The IRS4427STRPBF drives the OR-ing MOSFETs in redundant 12V or 24V power supply designs, where fast turn-off during a fault prevents reverse current flow that could collapse the bus. Its 3.3A sink current rapidly switches off a 30V-100V OR-ing FET within 100ns, protecting downstream DC-DC converters. Two channels can drive two independent OR-ing paths in a dual-feed telecom rectifier. The wide 6V to 20V VCC range matches the auxiliary supply typically derived from the input bus.
推荐
LED Driver and Lighting Power Stage
In high-brightness LED driving circuits using a buck or boost topology, the IRS4427STRPBF switches the low-side MOSFET at frequencies from 100 kHz to over 1 MHz, enabling small magnetics in compact architectural lighting. Its 50ns matched delay supports PWM dimming with sub-microsecond edge control for high-resolution dimming ratios above 10000:1. The SOIC-8 footprint suits the small form factor of MR16 and PAR-style retrofit lamps. Keep VCC bypass close to pin 4 and use 4-layer PCB for best thermal performance.
推荐
推荐产品汇总
工程参考数据： IRS4427STRPBF ——对比、设计指导和合规信息。
选型指南
与替代料对比
| 参数 | 本产品 | IRS4427SPBF | IR4427STRPBF | IRS4428STRPBF | UCC27624DR | UCC27624QDRQ1 |
|---|---|---|---|---|---|---|
| Package | 8-SOIC (DSO-8) | 8-SOIC - same | 8-SOIC - same | 8-SOIC - same | 8-SOIC - same | 8-SOIC - same |
| Brand | Infineon | Infineon - same | Infineon - same | Infineon - same | Texas Instruments - cross-brand | Texas Instruments - cross-brand |
| Peak Source Current | 2.3 A | 2.3 A | 2.3 A | 2.3 A | 4 A | 4 A |
| Peak Sink Current | 3.3 A | 3.3 A | 3.3 A | 3.3 A | 4 A | 4 A |
| Supply Voltage | 6 V to 20 V | 6 V to 20 V | 6 V to 20 V | 6 V to 20 V | 4.5 V to 26 V | 4.5 V to 26 V |
| Propagation Delay | 50 ns | 50 ns | 50 ns | 50 ns | ~25 ns | ~25 ns |
| Output Polarity | Both non-inverting | Both non-inverting | Both non-inverting | A inverted, B non-inverting | Both non-inverting | Both non-inverting |
| Automotive Qualified | No | No | No | No | No | Yes (AEC-Q100) |
关键差异点
- Higher sink current than competing low-side drivers in SOIC-8 （对比 MAX628CPA)
- Matched 50ns propagation delay for synchronous switching （对比 Discrete single-channel drivers (TC4420 x2))
- Wide 6V to 20V VCC range covers 12V and 15V industrial buses （对比 MAX628CPA (4.5V to 18V))
设计说明
Place a 1uF X7R ceramic bypass capacitor within 5 mm of the VCC pin (pin 4) to handle the high di/dt during MOSFET gate-charge transfer. Keep both VCC and GND traces wide (at least 0.5 mm) to minimize parasitic inductance that causes voltage ringing on VCC during fast switching. The exposed thermal pad is not present on this SOIC-8, but the wide GND pin (pin 2) provides most of the thermal dissipation path. A solid ground pour on the top layer directly under the IC further reduces ground bounce.
Do not leave the unused logic inputs floating - if a channel is not used, tie its IN pin to GND to prevent the output from randomly turning on due to noise pickup. The IRS4427 outputs are designed to drive MOSFET gates directly; do not place a series gate resistor larger than 10 ohm, or the driver's 3.3A sink capability will be wasted. The IRS4427 is non-inverting: input high produces output high. If you need an inverting channel, choose the IRS4428S variant instead.
Keep gate-drive traces short (under 25 mm) and route them away from switching-node traces to avoid capacitive coupling. The IRS4427 can source 2.3A peak, so the gate-drive trace resistance should be below 0.1 ohm to deliver full drive strength - use 0.2 mm copper or wider. If the driven MOSFET is more than 25 mm from the driver, add a 10 ohm gate resistor close to the driver and a 100 ohm resistor close to the gate to damp any trace resonance. Match the trace lengths of channel A and channel B outputs to preserve the matched propagation delay specification.
合规信息
RoHS and REACH compliance per Infineon product page. PBF suffix in MPN indicates lead-free plating. No AEC-Q100 qualification for the standard IRS4427STRPBF - use the TI UCC27624QDRQ1 for automotive designs. Halogen-free status not explicitly stated in verified web data.
