MRF1511NT1 - 8W 175MHz 7.5V RF LDMOS | NXP Semiconductors
料号： MRF1511NT1 ✓ 量产中| 数量 | 单价 | 小计 |
|---|---|---|
| 1 | $18.5 | $18.50 |
| 10 | $16.4 | $164.00 |
| 100 | $13.95 | $1,395.00 |
| 500 | $11.8 | $5,900.00 |
| 1,000 | $10.25 | $10,250.00 |
MRF1511NT1 概述
A radio-frequency power MOSFET is a discrete transistor optimized to deliver useful RF output power into a load (typically an antenna through an impedance-matching network) rather than to operate as a low-level analog switch. LDMOS in particular combines a lateral channel with a lightly-doped drain extension that supports high breakdown voltage and high drain efficiency on a single die, making it the dominant technology for sub-GHz broadband RF amplification. The MRF1511NT1 sits at the low-power end of NXP's LDMOS family, intended for handheld or portable radios rather than base-station PAs.
Key features include a 7.5 V nominal drain supply, 13 dB typical power gain at 175 MHz, broadband response from VHF through 175 MHz, a high-gain lateral structure that simplifies driver-stage design, and a rugged surface-mount ceramic carrier (PLD-1.5) suited to reflow assembly. The device's lateral construction yields excellent thermal conductivity from die to package, and its broadband impedance profile allows the same device to cover multiple FM bands without re-matching.
Architecturally the part is a single N-channel enhancement-mode LDMOS die mounted on a ceramic flange-less carrier. The lateral drift region shifts electric field away from the gate oxide, raising the avalanche breakdown rating for 7.5 V operation and improving resistance to load-mismatch stress. Drain efficiency at 7.5 V is intrinsically limited by the low supply rail, so the part trades efficiency for the convenience of running directly from a single lithium-ion cell.
Typical applications include portable FM transmitters, low-power VHF amplifiers, two-way radio driver stages, RFID reader PAs at 134 kHz/13.56 MHz after matching, and broadband laboratory amplifiers. The 7.5 V rail is convenient for single-cell Li-ion (4.2 V max) plus a small boost converter. Thermal management requires attention because the 62.5 W absolute rating assumes a properly soldered thermal pad; in portable FM service the duty cycle is low, so smaller copper areas are usually sufficient.
Designers should confirm impedance-match network design at the target frequency and provide adequate input decoupling; the EN/Enable function of an LDMOS is normally handled by gate-bias switching rather than a dedicated EN pin on this part.
直接替换替代料： MRF1511NT1 ——相同封装，引脚兼容。需要 PCB 改动的不同封装料号已排除。
快速对比工具——选择替代料号进行并排对比：
MRF1511NT3
✅ 直接替换 ⚠️ 规格未核验📋 参考替代料（不在目录中）
MRF1508NT1
✅ 直接替换 ⚠️ 规格未核验📋 参考替代料（不在目录中）
MRF1507NT1
✅ 直接替换 ⚠️ 规格未核验📋 参考替代料（不在目录中）
MRF1535NT1
✅ 直接替换 ⚠️ 规格未核验📋 参考替代料（不在目录中）
MRF1511NT1 最大额定值与电气特性
| Manufacturer | NXP Semiconductors (formerly Freescale/Motorola) |
| Part Number | MRF1511NT1 |
| 晶体管类型 | N-Channel Enhancement-Mode Lateral MOSFET (LDMOS) |
| Configuration | Single, Common-Source |
| Nominal Drain Supply (VDD) | 7.5 V |
| Continuous Drain Current (ID) | 150 mA DC (per DigiKey listing) |
| Output Power (POUT) | 8 W at 175 MHz |
| Operating Frequency | Up to 175 MHz (broadband VHF) |
| Power Gain (Gp) | 13 dB typical |
| Maximum Power Dissipation (Absolute) | 62.5 W |
| 封装 / 外壳 | PLD-1.5 (PLD1.5N) ceramic, surface mount |
| 安装类型 | Surface Mount |
| Case Connection | SOURCE |
| Channel Material | Silicon, N-channel |
| Terminal Form | No-lead (SMD) |
| Package Shape | Rectangular |
| Application | Broadband commercial / industrial RF amplifier, portable FM |
MRF1511NT1 引脚配置
| 引脚 1 | GATE — RF input / gate bias |
| 引脚 2 | DRAIN — RF output / drain supply (7.5 V) |
| 引脚 3 | SOURCE — Source / case ground |
DC 安全工作区 (Lateral N-Channel LDMOS)
典型应用
MRF1511NT1 适用于 6 应用s: Portable FM Transmitter Power Stage, VHF Two-Way Radio Driver / Final PA, Industrial Broadband RF Amplifier, RFID Reader Power Amplifier, Amateur Radio VHF Amplifier, RF Test and Measurement Driver.
Portable FM Transmitter Power Stage
The MRF1511NT1 is purpose-built for portable 7.5 V FM equipment, where its 8 W output at 175 MHz and 13 dB typical gain let a single transistor drive the antenna chain after a simple driver stage. At a 7.5 V drain rail the device can run from a small boost converter fed by a single Li-ion cell (4.2 V max), eliminating the high-voltage rails of base-station PAs. Lateral-MOSFET ruggedness tolerates the VSWR mismatches that occur when a portable antenna is disconnected, an important practical benefit in handheld service. Use a broadband matching network covering 88-108 MHz (US FM) or 76-90 MHz (JP FM) so the same PCB serves multiple regions. Thermal management is straightforward at this power level: a 1 square-inch copper pad on the PLD-1.5 source land keeps junction rise below 40 C at 8 W CW.
推荐
VHF Two-Way Radio Driver / Final PA
In land-mobile-radio service the MRF1511NT1 covers the 136-174 MHz VHF band with 8 W POUT and 13 dB gain, suitable as either a driver or a low-power final in handheld radios. The high gain reduces the burden on upstream driver stages, often eliminating one BJT or smaller MOSFET entirely and shrinking BOM cost. Common-source configuration matches standard mobile-radio PCB layouts, and the PLD-1.5 source-on-case ceramic carrier provides the ruggedness required for vehicle or handheld MOTO use. Pair with a harmonic filter at the antenna port to meet FCC/ETSI spurious-emission limits. Bias the gate at the Class-AB point recommended in the datasheet to balance efficiency against linearity for FM voice service.
推荐
Industrial Broadband RF Amplifier
The lateral-MOSFET broadband response of the MRF1511NT1 makes it a strong fit for general-purpose industrial RF amplifiers operating up to 175 MHz, including plasma generators, induction-heating driver chains, and RF lighting ballasts. A single broadband match network can cover the entire 30-175 MHz HF/VHF span, allowing one amplifier PCB to serve multiple product variants. The 8 W output level is appropriate for pilot or low-power industrial service where higher-power tubes or larger modules would be uneconomical. With a 7.5 V supply the device integrates easily into 5 V / 12 V industrial bus systems through a small LDO or buck-boost stage. Use a directional coupler and VSWR foldback circuit to protect the panel against open or shorted industrial loads.
推荐
RFID Reader Power Amplifier
At 13.56 MHz and the lower UHF RFID bands up to 175 MHz, the MRF1511NT1's broadband response lets a single PA serve multi-standard reader designs (ISO 15693, ISO 18000-3, and UHF Gen2). The 13 dB gain simplifies the upstream signal-chain architecture and the 7.5 V supply aligns with standard reader-system rails. The PLD-1.5 ceramic carrier is mechanically compatible with reflow assembly, supporting cost-effective high-volume reader manufacturing. Decoupling at the bias injection points is critical because RFID readers are extremely sensitive to PA-generated harmonics that can desensitize the receiver. Select input/output match networks that target the specific operating band to maximize POUT and minimize harmonic content.
推荐
Amateur Radio VHF Amplifier
Amateur radio constructors use the MRF1511NT1 as an 8 W final stage on the 6 m (50-54 MHz) and 2 m (144-148 MHz) amateur bands, where the broadband lateral-MOSFET response minimizes the need for band-specific matching. The 7.5 V supply is convenient for portable or field-day operation from battery power, and the high gain lets a single device replace a two-stage BJT chain. Source-on-case PLD-1.5 mounting allows direct bolting to a small heatsink or PCB copper coin for stationary service, while still being compatible with portable QRP operation. The rugged LDMOS die tolerates the high VSWR that occasionally occurs with temporary antennas, an important safety margin for field operation.
推荐
RF Test and Measurement Driver
Laboratory RF test equipment, including signal-generator output stages and bench-top amplifier chains, can use the MRF1511NT1 as a stable 8 W driver up to 175 MHz. The predictable small-signal gain (13 dB typical) and broadband response simplify test-equipment calibration procedures, while the ceramic PLD-1.5 package provides repeatable thermal performance on the bench. Driving 50 ohm loads directly through a calibrated attenuator chain makes the device a useful reference PA for characterizing filters, antennas, and receiver front ends. Continuous-duty operation at 8 W requires careful heatsinking; lab use typically adds a small fan or a substantial copper coin under the PLD-1.5 land pattern.
推荐
推荐产品汇总
工程参考数据： MRF1511NT1 ——对比、设计指导和合规信息。
选型指南
与替代料对比
| 参数 | 本产品 | MRF1511NT3 | MRF1508NT1 | MRF1507NT1 | MRF1535NT1 |
|---|---|---|---|---|---|
| Package | PLD-1.5 (PLD1.5N) ceramic | PLD-1.5 (PLD1.5N) ceramic - same | PLD-1.5 (PLD1.5N) ceramic - same | PLD-1.5 (PLD1.5N) ceramic - same | PLD-1.5 (PLD1.5N) ceramic - same |
| Brand | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors |
| Output Power (POUT) | 8 W at 175 MHz | 8 W (same die) | ~8 W (within MRF1500-series envelope) | Lower (~5-6 W class) | Higher (~35 W class) |
| Operating Frequency | Up to 175 MHz | Up to 175 MHz | Up to 175 MHz | Up to 175 MHz | Up to 500 MHz |
| Drain Supply (VDD) | 7.5 V nominal | 7.5 V | 7.5 V | 7.5 V | 12.5 V |
| Continuous Drain Current | 150 mA DC | 150 mA DC | Similar class | Similar class | Higher (~3 A DC class) |
| Case Connection | SOURCE | SOURCE | SOURCE | SOURCE | SOURCE |
| Transistor Technology | N-channel LDMOS | N-channel LDMOS | N-channel LDMOS | N-channel LDMOS | N-channel LDMOS |
关键差异点
- Same PLD-1.5 package across the entire MRF1500-series family （对比 MRF1511NT3)
- Lowest supply voltage in the MRF1500-series at 7.5 V （对比 MRF1535NT1)
- 13 dB typical gain reduces driver-stage complexity （对比 MRF1507NT1)
设计说明
Estimated: at 8 W RF output with 7.5 V drain and typical 60% drain efficiency, internal dissipation is roughly 5.3 W. The PLD-1.5 ceramic carrier requires a continuous ground-plane copper coin under the source pad of at least 1 square inch (645 mm^2) and, for continuous CW service, a small clip-on heatsink. Verify junction temperature with a thermocouple on the source land during worst-case load-VSWR conditions to stay within NXP's recommended 200 C maximum.
Use a low-loss substrate such as Rogers RO4003C or equivalent for the matching-network traces if the device will operate above 100 MHz; FR-4 introduces several tenths of a dB insertion loss that directly reduces POUT at 175 MHz. Keep gate and drain traces as 50 ohm microstrip or stripline, place the gate-bias and drain-bias feedlines perpendicular to the RF path, and use 100 pF and 10 nF decoupling pairs on the drain bias injection point to suppress low-frequency RF feedback.
Do not assume the MRF1511NT1 has an enable pin - like most MRF-series RF power MOSFETs it has only Gate, Drain, and Source/Case. Output power is controlled by the RF drive level on the gate, while bias is set by a fixed gate-bias voltage, typically Vgs ~= 2-3 V at idle for Class-AB operation. Always include a gate-source resistor (typically 10 kohm to 100 kohm) to prevent unintended RF oscillation when the RF drive is removed. Finally, never operate the device without a proper 50 ohm load or equivalent matching network - open-drain operation instantly destroys the LDMOS die.
Estimated: place the input matching network within 5 mm of the gate lead and the output matching network within 5 mm of the drain lead to minimize parasitic inductance. Stitch the perimeter of the PLD-1.5 source land with grounded via fence (via pitch ~lambda/20 at the highest operating frequency) to provide a continuous RF return path. Keep digital control lines and supply traces well separated from the RF path; a single misplaced bypass capacitor on the gate bias line can introduce low-frequency oscillation that destroys the die.
合规信息
Compliance status for the MRF1511NT1 should be verified against the latest NXP product page or material declaration documents (NXP product folder at nxp.com). The MRF1500-series was originally released in the Motorola/Freescale era; lead-free and RoHS conversion status varies by date code. AEC-Q100 is not applicable to this RF power MOSFET.
