MRF19085LR3 - 90W, 1930-1990 MHz RF Power LDMOS | NXP
料号： MRF19085LR3 ✓ 量产中| 数量 | 单价 | 小计 |
|---|---|---|
| 1 | $95 | $95.00 |
| 10 | $87.5 | $875.00 |
| 100 | $78 | $7,800.00 |
| 500 | $71.2 | $35,600.00 |
| 1,000 | $66.4 | $66,400.00 |
MRF19085LR3 概述
An RF power LDMOS transistor is a laterally-diffused MOSFET optimized for high-frequency, high-power amplification. Unlike small-signal MOSFETs, RF power LDMOS parts integrate a high breakdown drain region, low parasitic capacitances, and a thermally efficient ceramic/overmolded package to dissipate 100 W+ from a single die. They sit at the top of the RF amplifier hierarchy: RF amplifier -> power amplifier (PA) -> RF power transistor -> LDMOS. The MRF19085LR3 specifically targets the 1.93-1.99 GHz cellular band that became the foundation of 3G (UMTS/CDMA2000) base station PAs.
Key features include 90 W Pout capability, 13 dB power gain at 1.93-1.99 GHz, 26 V nominal VDD operation, 850 mA quiescent current recommendation, and inherent robustness for multicarrier amplifier applications including TDMA, CDMA, and W-CDMA. The lateral N-channel structure also provides excellent linearity and high breakdown voltage headroom for OFDM waveforms.
The device's lateral architecture uses an N-channel enhancement-mode LDMOS process with a drain-source breakdown of 65 V, providing comfortable headroom above the 26 V VDD rail. This makes it tolerant of VSWR mismatches typical at the antenna interface of base station PAs, where reflected power can momentarily double the drain voltage swing.
Typical applications include 3G/UMTS macro-cell base station power amplifiers, PCS/Cellular band repeaters, multicarrier driver stages, and TD-SCDMA infrastructure. The wide bandwidth also accommodates commercial 2-carrier N-CDMA test conditions with adjacent-channel power ratio (ACPR) optimized for cellular mask compliance.
When designing with the MRF19085LR3, the gate bias must be sequenced with the drain supply to prevent parametric shifts; IDQ should be set to 850 mA per the datasheet's N-CDMA test condition for optimal linearity. The exposed ceramic flange (NI-780H-2L) must be soldered to a copper heatsink with adequate thermal mass to keep Tj below 200 C at full Pout.
This page consolidates distributor pricing, NI-780H-2L drop-in alternatives, and practical PA design notes that go beyond the manufacturer datasheet to help cellular-infrastructure engineers make sourcing and substitution decisions quickly.
直接替换替代料： MRF19085LR3 ——相同封装，引脚兼容。需要 PCB 改动的不同封装料号已排除。
快速对比工具——选择替代料号进行并排对比：
MRF19085LSR3
✅ 直接替换📋 参考替代料（不在目录中）
MRF19045LR3
✅ 直接替换📋 参考替代料（不在目录中）
MRF19030LR3
✅ 直接替换 ⚠️ 规格未核验📋 参考替代料（不在目录中）
MRF6S19085LR3
✅ 直接替换 ⚠️ 规格未核验📋 参考替代料（不在目录中）
MRF6S19125HR3
✅ 直接替换 ⚠️ 规格未核验📋 参考替代料（不在目录中）
MRF19085LR3 最大额定值与电气特性
| 晶体管类型 | LDMOS, N-Channel, Enhancement-Mode |
| Technology | Lateral N-Channel RF Power MOSFET |
| Frequency Range | 1930 MHz to 1990 MHz |
| Drain-Source Voltage (VDS Rated) | 65 V |
| Operating Drain Voltage (VDD) | 26 V (typical test condition) |
| Quiescent Current (IDQ) | 850 mA |
| Output Power (Pout) - 2-Carrier N-CDMA | 18 W typical @ VDD=26 V, IDQ=850 mA |
| Power Gain | 13 dB |
| Maximum Power Dissipation | 273 W (per partstack listing) |
| 封装 / 外壳 | NI-780H-2L (CASE 465-06, STYLE 1), ceramic flange |
| 安装类型 | Surface Mount / Flange Mount (ceramic with metal flange) |
| Configuration | Single |
| Target Applications | PCN/PCS base station, TDMA, CDMA, multicarrier amplifier |
| RoHS 状态 | Compliant |
MRF19085LR3 引脚配置
| 引脚 1 | GATE — Gate bias input; set VGS to achieve IDQ = 850 mA at VDD = 26 V |
| 引脚 2 | DRAIN — RF output / DC drain bias (internally combined); connect to VDD = 26 V via bias-T or matching network |
| 引脚 3 | SOURCE / FLANGE — Source connection; tied to ceramic metal flange and system ground for thermal dissipation |
| 引脚 CASE | CASE / FLANGE — Ceramic body with metal flange; mounted to heatsink, acts as primary thermal path |
安全工作区 (DC) - MRF19085LR3
典型应用
MRF19085LR3 适用于 6 应用s: 3G/UMTS Macro-Cell Base Station Power Amplifier, PCS/Cellular Band Repeater and Booster PA, Multicarrier Driver Stage for Doherty Amplifiers, TDMA and CDMA Infrastructure Amplifier, Industrial RF Heating and Plasma Generator Driver, Test & Measurement Instrumentation PAs.
3G/UMTS Macro-Cell Base Station Power Amplifier
The MRF19085LR3 is designed for 1930-1990 MHz PCN/PCS base station power amplifier stages in 3G/UMTS cellular networks. With 18 W typical Pout under 2-carrier N-CDMA test conditions (VDD = 26 V, IDQ = 850 mA) and 13 dB gain, the lateral N-channel LDMOS process delivers the linearity required for W-CDMA and TD-SCDMA multicarrier signals. In a typical macro-cell PA, four MRF19085LR3 devices can be combined in a balanced Doherty configuration to reach 80-100 W average output power while meeting the 3GPP ACPR mask. Compared to GaN HEMT PAs of the same frequency, the MRF19085LR3 offers lower die cost and proven long-term reliability in Tier-1 OEM base station equipment.
推荐
PCS/Cellular Band Repeater and Booster PA
In 1930-1990 MHz cellular repeaters, picocells, and signal boosters, the MRF19085LR3 provides a compact driver/final-stage solution with its NI-780H-2L ceramic flange package. The 90 W pulsed Pout capability allows headroom for ALC-controlled output, while the lateral LDMOS architecture provides stable gain across the 60 MHz cellular window. Estimated: with 5 W input drive, the 13 dB gain yields 100 W saturated output, ideal for driving a 4-way splitter in an indoor DAS node. The 65 V drain breakdown also provides margin against antenna-port VSWR events common in repeater installations with unpredictable antenna placement.
推荐
Multicarrier Driver Stage for Doherty Amplifiers
The MRF19085LR3 operates as a driver or main PA in Doherty amplifier topologies used in 3G base stations for efficiency at backed-off output power. Per the NXP datasheet, the device is characterized for 2-carrier N-CDMA multicarrier operation with IDQ set at 850 mA - the bias point that optimizes the gate-source operating region for Doherty main/peak transistor switching. The NI-780H-2L ceramic flange provides low thermal resistance (~0.4 C/W junction-to-flange), enabling continuous CW drive at high duty cycles. Estimated: junction-to-ambient thermal resistance of 0.6-0.8 C/W with a proper bolted heatsink keeps Tj at 90-110 C under 2-carrier N-CDMA operation.
推荐
TDMA and CDMA Infrastructure Amplifier
Per the NXP datasheet MRF19085-2, the MRF19085LR3 is designed for TDMA and CDMA base station applications, providing the linearity envelope needed for IS-95 and GSM-EDGE infrastructure. The lateral N-channel LDMOS structure with 13 dB gain and 26 V VDD operation offers reliable performance in time-division and code-division multiple-access PA stages. In a CDMA2000 1xEV-DO Rev. A base station, the device delivers the necessary peak-to-average ratio (PAR) headroom of 5-6 dB while maintaining adjacent-channel leakage ratio (ACLR) below -45 dBc.
推荐
Industrial RF Heating and Plasma Generator Driver
Although primarily a cellular part, the MRF19085LR3's 90 W pulsed capability at 1930-1990 MHz can be repurposed for industrial RF heating, plasma generation, and dielectric drying equipment operating near the ISM-adjacent 2 GHz band. The 65 V drain breakdown provides VSWR robustness against mismatched industrial loads, and the NI-780H ceramic flange supports the high-duty-cycle operation typical of continuous-flow industrial processes. Estimated: at 80% duty cycle and 50 W average output, the device dissipates ~120 W of heat that must be removed via a water-cooled or large forced-air heatsink.
推荐
Test & Measurement Instrumentation PAs
The MRF19085LR3 serves as a broadband power amplifier stage in 1930-1990 MHz signal generators, amplifier test beds, and EMC measurement equipment. Its 13 dB gain and stable operation across the 60 MHz cellular window make it suitable for cellular handset and base station test fixtures requiring repeatable, well-characterized Pout levels. The lateral LDMOS device's known S-parameters, published in the datasheet, simplify PA designers' bench characterization and load-pull setups, while the rugged 65 V drain breakdown survives accidental open/short load conditions during test.
推荐
推荐产品汇总
工程参考数据： MRF19085LR3 ——对比、设计指导和合规信息。
选型指南
与替代料对比
| 参数 | 本产品 | MRF19085LSR3 | MRF19045LR3 | MRF19030LR3 | MRF6S19085LR3 | MRF6S19125HR3 |
|---|---|---|---|---|---|---|
| Brand | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors |
| Package | NI-780H-2L (CASE 465-06) | NI-780H-2L (CASE 465-06) - same | NI-780 family - same footprint | NI-780 family - same footprint | NI-780 family - same footprint | NI-780 family - same footprint |
| Output Power (Pout) | 90 W pulsed / 18 W 2-carrier N-CDMA | 90 W pulsed / 18 W 2-carrier N-CDMA | ~45 W pulsed (-50%) | ~30 W pulsed (-67%) | 90 W pulsed (same) | ~125 W pulsed (+39%) |
| Frequency Range | 1930 MHz to 1990 MHz | 1930 MHz to 1990 MHz | 1930 MHz to 1990 MHz | 1930 MHz to 1990 MHz | 1930 MHz to 1990 MHz | 1930 MHz to 1990 MHz |
| Operating Drain Voltage (VDD) | 26 V | 26 V | 26 V | 26 V | 28 V (typical) | 28 V (typical) |
关键差异点
- Same NI-780H-2L package across the MRF19085 family for drop-in scalability （对比 MRF19045LR3)
- Higher peak power in same family （对比 MRF19030LR3)
- Two-carrier N-CDMA test characterization is rare in this price tier （对比 MRF6S19125HR3)
- 65 V drain breakdown provides VSWR margin （对比 Lower-breakdown competing LDMOS)
设计说明
Estimated: at VDD = 26 V and 18 W Pout in 2-carrier N-CDMA mode, the MRF19085LR3 dissipates approximately 110-130 W of heat (DC input minus RF output). The NI-780H-2L ceramic flange with bolted copper heatsink should achieve junction-to-ambient thermal resistance of 0.6-0.8 C/W, keeping Tj below 130 C at 50 C ambient. Use a thin layer of high-quality thermal compound (such as Wakefield-Vette 120 or similar 3 W/m-K grade); do not exceed the datasheet maximum junction temperature of 200 C. Forced-air cooling is recommended for continuous CW drive above 60 W Pout.
The MRF19085LR3 NI-780H-2L package requires the ceramic flange to be screwed or clamped to the system chassis/heatsink, not soldered to the PCB. The PCB pads carry only the gate bias, drain bias/RF output, and matching network. Use Rogers RO4003C or RO4350B substrate (thickness 20-30 mils) for the input/output matching networks; FR-4 is unsuitable at 1.9 GHz due to high loss tangent (0.02 vs 0.002 for Rogers). Keep the gate and drain RF traces as 50-ohm microstrip lines as short as possible, and place bias-Ts (or RFCs with bypass caps) at the bias injection points.
Gate bias must be applied before drain voltage; failure to sequence VGS before VDD can cause parametric shifts or device damage. Set IDQ precisely to 850 mA as documented in the NXP datasheet MRF19085-2 - lower IDQ degrades linearity, higher IDQ reduces efficiency. Do not operate above VDD = 28 V even though the breakdown is 65 V; thermal runaway and reliability issues occur above the datasheet's recommended operating point. Always include an over-temperature shutdown and VSWR protection in production designs.
Use a star-ground topology with the source flange as the single ground reference; avoid ground loops between the input and output matching networks. Place 1000 pF and 10 nF ceramic bypass capacitors close to the drain and gate bias pins to suppress low-frequency oscillations. Keep the input and output matching networks physically separated by at least 5 mm to minimize feedback and instability. For Doherty amplifier layouts, ensure 90-degree and 50-ohm transmission line lengths are precisely tuned to the operating frequency.
合规信息
RoHS compliance and lead-free status per NXP product page and DigiKey listing. AEC-Q100 not applicable - this is an RF power transistor for cellular base station infrastructure, not an automotive-grade part. Halogen_free pricing environment not explicitly documented in the verified web data - set to unknown.
