MRF426 - 25W NPN RF Power Transistor | MACOM | 1.5-30MHz
料号： MRF426 ✓ 量产中| 数量 | 单价 | 小计 |
|---|---|---|
| 1 | $50.3971 | $50.40 |
| 10 | $0 | $0.00 |
| 100 | $0 | $0.00 |
| 500 | $0 | $0.00 |
| 1,000 | $0 | $0.00 |
MRF426 概述
An RF bipolar power transistor is a semiconductor device optimized to amplify or generate high-frequency RF power. Unlike a general-purpose transistor, its junction layout, package construction, thermal path, and RF impedance are tailored for RF operation. Within the power-semiconductor hierarchy, the MRF426 is a silicon NPN RF power transistor intended for transmitter or amplifier stages operating in the shortwave and HF bands.
Key features include a 35 V collector-emitter voltage rating, 3 A collector current capability, 25 W PEP output power, 22 dB minimum gain, and 35% efficiency. The characterized frequency range extends from 2 MHz minimum to 30 MHz maximum in the manufacturer product specifications, while the device is described for 1.5–30 MHz HF/SSB applications. Intermodulation distortion is specified at 30 dB maximum at 25 W PEP under the characterized test condition.
The MRF426 uses a ceramic flange package with a chassis-mount configuration. Its construction supports RF power handling while requiring careful thermal design at the flange and PCB interface. The device is a bipolar NPN transistor, and its datasheet identifies it as 100% tested for the stated RF performance. S-parameter information is available through the manufacturer technical resources.
Typical applications include HF radio transmitters, single-sideband transmitters, linear RF amplifiers, driver stages, and output stages in communication equipment operating within the 1.5–30 MHz range. It is most appropriate where the design requires a dedicated RF power transistor rather than a low-frequency switching transistor.
For reliable operation, the RF amplifier layout should provide controlled impedance, short return paths, adequate input and output matching, and a low-inductance thermal connection to the flange. Biasing and drive must remain within the manufacturer’s absolute maximum and characterized conditions. Verify package pinout, thermal requirements, and operating limits against the current MACOM datasheet before finalizing a new design.
This page consolidates manufacturer specifications, distributor references, verified equivalent-part information, and application-oriented design guidance for engineers evaluating the MRF426 in HF/SSB RF power systems.
直接替换替代料： MRF426 ——相同封装，引脚兼容。需要 PCB 改动的不同封装料号已排除。
快速对比工具——选择替代料号进行并排对比：
HG426
✅ 直接替换📋 参考替代料（不在目录中）
MRF426 最大额定值与电气特性
| 晶体管类型 | NPN bipolar silicon RF power transistor |
| Minimum Frequency | 2 MHz |
| Maximum Frequency | 30 MHz |
| Application Frequency Range | 1.5 MHz to 30 MHz |
| Bias Voltage | 28 V |
| Output Power | 25 W PEP |
| Minimum Gain | 22 dB |
| 效率 | 35% |
| Collector-Emitter Voltage | 35 V |
| Collector Current | 3 A |
| Intermodulation Distortion | 30 dB maximum at 25 W PEP |
| 封装 | Ceramic flange mount, CASE211-07, STYLE 1 |
| Package Category | Ceramic flange mount |
| Technology | Bipolar silicon RF power transistor |
| Datasheet Test Status | 100% tested at specified conditions |
| Operating Class | Class A and Class B characterization |
| Manufacturer | MACOM Technology Solutions |
MRF426 ceramic flange mount 引脚配置指南
MRF426（ceramic flange mount 封装）的引脚配置。 该功率器件具有栅极、漏极和源极端子。对于无极性封装，请参阅制造商数据手册以了解确切的引脚 1 方向和封装尺寸细节。常见应用包括电源设计、电机驱动和负载开关。
暂无详细引脚数据： MRF426.
请参阅 数据手册 以查看完整引脚配置。
典型应用
MRF426 适用于 6 应用s: HF SSB Transmitter Power Stage, HF Linear RF Amplifier, Shortwave Radio Driver Stage, HF Communication Equipment RF Output Stage, Industrial RF Power Amplifier, High-Power HF Signal Generator.
HF SSB Transmitter Power Stage
The MRF426 fits an HF single-sideband transmitter output or driver stage because MACOM specifies it for 1.5–30 MHz HF/SSB equipment with 25 W PEP capability, 22 dB minimum gain, and 35% efficiency at 28 V and 30 MHz. Place the transistor in a properly matched RF amplifier with a controlled 50-ohm interface and class-A or class-B bias as appropriate. The main design consideration is heat: the ceramic flange must be coupled to a low-inductance thermal spreader while the output network controls harmonic and unwanted-sideband energy.
推荐
HF Linear RF Amplifier
Use the MRF426 as the active device in an HF linear amplifier when the operating frequency falls between 1.5 MHz and 30 MHz. Its 25 W PEP rating and 22 dB minimum gain provide a useful starting point for a multi-stage linear RF design, while the 35% efficiency specification identifies the expected efficiency point at 28 V and 30 MHz. Matching networks, DC feed networks, bias decoupling, and thermal stabilization should be tuned together because gain and linearity depend strongly on operating class and load impedance.
推荐
Shortwave Radio Driver Stage
The MRF426 is suitable for a shortwave transmitter driver stage where high RF gain and 25 W PEP capability are needed at 28 V. Its specified 22 dB minimum gain can reduce the required drive level compared with a lower-gain power device, while the 2–30 MHz manufacturer frequency specification supports shortwave equipment. The amplifier should include controlled impedance transmission lines or lumped matching elements, adequate input return loss, and thermal spacing from nearby RF components to preserve repeatability across temperature.
推荐
HF Communication Equipment RF Output Stage
The MRF426 can serve as an RF output device in HF communication equipment that operates from 1.5 MHz through 30 MHz. Its NPN silicon construction, 25 W PEP rating, and 28 V bias requirement suit conventional RF power stages where the system supplies controlled collector voltage and base drive. The design must account for intermodulation distortion, listed as 30 dB maximum at 25 W PEP under the characterized condition, and should include filtering or output-network design appropriate to the required emission and signal-integrity limits.
推荐
Industrial RF Power Amplifier
MRF426 may be used in industrial RF power amplifier assemblies operating in the HF range, provided the amplifier is designed around the device’s characterized 28 V supply and 1.5–30 MHz operating range. The 25 W PEP capability is useful where compact RF output power is needed without moving to a higher-frequency power transistor. Industrial equipment should add chassis shielding, interlocks, thermal monitoring, and output filtering; these protections are especially important because the transistor is a high-power discrete device operating at elevated dissipation.
推荐
High-Power HF Signal Generator
The MRF426 can be evaluated for the output stage of a high-power HF signal generator or test amplifier covering frequencies up to 30 MHz. Its minimum gain of 22 dB and 25 W PEP rating can help reduce the number of gain stages, while the manufacturer characterization at 28 V provides a defined starting point for bias and drive design. The output network should be calibrated for the desired load and frequency, and the assembly should include thermal monitoring because dissipated power can be significant even when the RF output specification is met.
推荐
推荐产品汇总
工程参考数据： MRF426 ——对比、设计指导和合规信息。
选型指南
与替代料对比
| 参数 | 本产品 | HG426 |
|---|---|---|
| Package | CASE211-07, STYLE 1 ceramic flange mount | CASE211-07 ceramic flange mount |
| Brand | MACOM Technology Solutions | HG Semiconductor Limited |
| Transistor Type | NPN bipolar silicon RF power transistor | NPN RF power transistor |
| Application Frequency Range | 1.5 MHz to 30 MHz | Up to 30 MHz |
| Bias Voltage | 28 V | 28 V |
| Output Power | 25 W PEP | 25 W |
关键差异点
- Defined HF/SSB RF power capability （对比 HG426)
- Manufacturer-specified linear-amplifier positioning （对比 HG426)
- Established manufacturer technical support （对比 HG426)
设计说明
Treat the ceramic flange as the primary thermal path. Couple it to a rigid, low-inductance chassis or heat spreader using the manufacturer-specified mounting method, and verify the interface with thermal analysis or temperature measurement. Do not rely on airflow alone: the MRF426 is a 25 W PEP RF power device, and the required heat rejection depends on bias, drive, load mismatch, ambient temperature, and carrier duty cycle.
Use a controlled-impedance RF layout and keep the transistor, DC feed, input matching, and output matching paths physically short. Minimize loop area in emitter and collector connections, keep high-current switching and sensitive input return paths separate, and provide a local RF ground connection. At 1.5–30 MHz, lead inductance and unintended capacitance can alter gain, stability, impedance matching, and harmonic behavior even when the nominal circuit values appear correct.
Design the bias network for the characterized 28 V condition and provide controlled base drive rather than relying on an overdriven source. Use a stable RF choke or feed arrangement, place bypass capacitors close to the device, and monitor collector current and temperature during tuning. Start with conservative drive and increase it only after checking output power, gain, efficiency, and intermodulation distortion.
Do not confuse PEP with continuous average power, and do not assume that a substitute has identical RF behavior solely because it has the same package. For the HG426, verify the complete datasheet, pin assignments, flange mounting details, thermal limits, gain, efficiency, and RF test conditions before production use. Confirm the operating frequency, load impedance, bias class, and output-network requirements for the intended RF system.
合规信息
The supplied verified sources do not provide explicit RoHS, REACH, lead-free, halogen-free, or conflict-minerals declarations for the MRF426. AEC-Q100 status is not applicable unless a specific automotive qualification is requested.
