MRF5S9101NR1 - 100W, 869-960MHz RF Power LDMOS | NXP Semiconductors
料号： MRF5S9101NR1 ✓ 量产中| 数量 | 单价 | 小计 |
|---|---|---|
| 1 | $89.5 | $89.50 |
| 10 | $82.1 | $821.00 |
| 100 | $74.25 | $7,425.00 |
| 500 | $67.8 | $33,900.00 |
| 1,000 | $61.4 | $61,400.00 |
MRF5S9101NR1 概述
A lateral N-channel enhancement-mode MOSFET (LDMOS) is a power transistor structure optimized for RF amplification at VHF/UHF frequencies. Unlike vertical MOSFETs, the LDMOS architecture places the source, channel, drain, and drift region laterally on the silicon die, enabling high breakdown voltage, low output capacitance, and excellent thermal stability. LDMOS belongs to the broader hierarchy RF power transistor → power MOSFET → discrete semiconductor, and is the dominant technology in cellular base station PA design from 700 MHz through 2.6 GHz.
The MRF5S9101NR1 features high gain (17.5 dB at 960 MHz), broadband performance across the 869–960 MHz cellular sub-bands, and a 26 V nominal drain supply with 68 V breakdown rating. It is rated for 100 W continuous-wave output power and is designed to withstand the high VSWR loads typical of base station antennas. The lead-free overmolded plastic package simplifies board-level integration and improves long-term reliability in outdoor base station environments.
Typical applications include GSM and GSM EDGE macro-cell base station power amplifiers, multicarrier amplifier (MCPA) lineups, and industrial/scientific RF generators in the 900 MHz band. It is also used in push-pull or Doherty amplifier configurations where its high gain simplifies driver-stage design and reduces overall BOM cost.
Designers should observe the 26 V maximum drain voltage and provide adequate heatsinking to keep junction temperature within the 200 °C limit. The TO-270 WB-4 flange-mount package requires through-board or chassis-mount heatsinking; thermal vias alone are insufficient for 100 W continuous dissipation.
直接替换替代料： MRF5S9101NR1 ——相同封装，引脚兼容。需要 PCB 改动的不同封装料号已排除。
本系列中的变体
可与以下型号直接替换的同系列型号： MRF5S9101NR1 （相同外形与封装尺寸） ——差异在于 Application, Mounting Type, Package / Case, Power Gain, Transistor Type.
快速对比工具——选择替代料号进行并排对比：
MRF5S9101NBR1
✅ 直接替换📋 参考替代料（不在目录中）
MRF5S9101NSR1
✅ 直接替换 ⚠️ 规格未核验📋 参考替代料（不在目录中）
MRFE6S9125NR1
✅ 直接替换📋 参考替代料（不在目录中）
MRF5S9101MR1
✅ 直接替换✓ 有现货
$49.95 / 个
查看数据手册 →MRF5S9101NR1 最大额定值与电气特性
| Manufacturer | NXP Semiconductors (formerly Freescale Semiconductor) |
| Part Number | MRF5S9101NR1 |
| 晶体管类型 | LDMOS, N-Channel Enhancement-Mode Lateral MOSFET |
| Application | GSM / GSM EDGE base station PAs, 869–960 MHz |
| Frequency Range | 869 MHz to 960 MHz |
| Test Frequency | 960 MHz |
| Output Power (P1dB) | 100 W (typ) |
| Power Gain | 17.5 dB (typ at 960 MHz, 26 V, 700 mA) |
| Drain Supply Voltage (Vdd) | 26 V (nominal), 28 V (max operating) |
| Drain Breakdown Voltage (Vdss) | 68 V |
| Quiescent Current (Idq) | 700 mA |
| Drain Current (Test) | 700 mA |
| Junction Temperature (Max) | 200 °C |
| 封装 / 外壳 | TO-270 WB-4 (CASE 1486-03), STYLE 1, plastic overmold |
| 安装类型 | Surface / Flange Mount (through-board thermal pad) |
| Lead-Free / RoHS | Lead-free (N suffix indicates lead-free transition) |
MRF5S9101NR1 引脚配置
| 引脚 1 | DRAIN — RF output / DC drain supply (internally connected) |
| 引脚 2 | GATE — RF input / DC gate bias |
| 引脚 3 | SOURCE — DC and RF ground (flange/thermal pad) |
安全工作区 - DC (estimated from MRF5S9101N family datasheet)
典型应用
MRF5S9101NR1 适用于 6 应用s: GSM 900 Macro-Cell Base Station PA, Multicarrier Amplifier (MCPA) for GSM/EDGE, Industrial / Scientific RF Generator (900 MHz), Doherty PA Carrier Amplifier, Push-Pull 900 MHz Power Amplifier, Repeater / Signal Booster PA Stage.
GSM 900 Macro-Cell Base Station PA
The MRF5S9101NR1's 100 W P1dB output and 17.5 dB gain at 869–960 MHz make it a primary candidate for GSM and GSM EDGE macro-cell base station final-stage PAs. Its 26 V drain bias matches standard cellular PA power architecture, while the 68 V Vdss breakdown provides ample margin for the transient overshoots typical in Doherty and multicarrier PA lineups. At 100 W CW, the lateral N-channel LDMOS structure delivers the ruggedness required for outdoor tower-mount installations subject to high antenna VSWR. Design tip: maintain a 6–8 dB back-off from P1dB to preserve GSM spectral mask compliance and ensure the heatsink keeps Tj below 150 °C at 50 °C ambient.
推荐
Multicarrier Amplifier (MCPA) for GSM/EDGE
Multicarrier amplifier lineups at 900 MHz rely on transistors with high linearity and broadband match, both of which the MRF5S9101NR1 delivers through its lateral N-channel LDMOS structure. The 17.5 dB gain at 960 MHz simplifies the driver chain in 4-carrier MCPA designs, reducing BOM cost and board area. Its TO-270 WB-4 plastic overmold package is rated for the continuous-duty thermal stress of MCPA operation, where multiple carriers share a single final-stage device. When designing MCPA lineups, bias the device in class AB around 700 mA Idq and use a DPD system (e.g., NXP's CML-based digital predistortion platform) to maintain ACPR below -65 dBc for 4-carrier EDGE signals.
推荐
Industrial / Scientific RF Generator (900 MHz)
Beyond cellular, the MRF5S9101NR1's 100 W CW capability at 869–960 MHz suits industrial RF generators for ISM-band applications such as dielectric heating, plasma generation, and RFID portal readers. The high 17.5 dB gain reduces the number of driver stages required to reach 100 W, simplifying the analog RF chain in industrial equipment. The TO-270 WB-4 flange-mount package can be bolted directly to a chassis or RF cavity heatsink, an advantage in industrial environments where forced-air cooling is preferred over PCB copper-area-only thermal management. Design tip: in continuous-duty industrial use, derate to 80 W and monitor Tj to extend service life well beyond the 100,000-hour MTTF target.
推荐
Doherty PA Carrier Amplifier
In a 900 MHz Doherty configuration, the MRF5S9101NR1 is commonly deployed as the carrier (main) amplifier, with the MRF5S9101NBR1 paired as the peaking amplifier. The matched gain (17.5 dB) and identical TO-270 WB-4 footprint allow the two transistors to share the same PCB layout and heatsink, simplifying mechanical design. The carrier amplifier operates in class AB around 700 mA quiescent current, while the peaking amplifier is biased in class C and turns on at the 6 dB back-off point, extending the linear efficiency of the composite amplifier. This pairing delivers ~40 % system efficiency at 8 dB back-off, critical for LTE/5G NR base stations seeking to reduce operational power cost.
推荐
Push-Pull 900 MHz Power Amplifier
The MRF5S9101NR1 can be deployed in a balanced push-pull configuration at 900 MHz using two transistors coupled through 90-degree quadrature hybrids. This doubles the available output power to ~200 W combined while cancelling even-order harmonics (2nd, 4th) and improving return loss. The matched gain (17.5 dB each) ensures symmetric drive, and the TO-270 WB-4 ceramic thermal pad allows both devices to share a common heatsink for thermal symmetry - critical to maintaining balance and preventing thermal-runaway mismatch. Push-pull topologies also relax the per-device power requirement, extending transistor lifetime at full operational duty cycle.
推荐
Repeater / Signal Booster PA Stage
In cellular repeaters and small-cell signal boosters operating in the 900 MHz band, the MRF5S9101NR1's 17.5 dB gain and 100 W output make it a strong candidate for the final PA stage when extended coverage or outdoor deployment is required. Its lateral LDMOS structure handles the high PAPR (peak-to-average power ratio) of multicarrier LTE signals that share the 900 MHz spectrum with GSM. The TO-270 WB-4 plastic overmold package is suitable for the compact, thermally-constrained enclosures typical of remote-radio-head (RRH) and booster designs. Design tip: integrate an isolator/circulator at the output to protect the transistor from antenna mismatch faults - the 68 V Vdss rating provides robustness but does not substitute for proper output protection.
推荐
推荐产品汇总
工程参考数据： MRF5S9101NR1 ——对比、设计指导和合规信息。
选型指南
与替代料对比
| 参数 | 本产品 | MRF5S9101NBR1 | MRF5S9101NSR1 | MRFE6S9125NR1 | MRF5S9101MR1 |
|---|---|---|---|---|---|
| Brand | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors |
| Package | TO-270 WB-4 (CASE 1486-03) | TO-270 WB-4 (CASE 1486-03) - same | TO-270 WB-4 (CASE 1486-03) - same | TO-270 WB-4 family (same footprint class) | TO-270 WB-4 (CASE 1486-03) - same |
| Output Power (P1dB) | 100 W | 100 W | 100 W | 125 W | 100 W |
| Frequency Range | 869–960 MHz | 869–960 MHz | 869–960 MHz | up to 1000 MHz | 869–960 MHz |
| Drain Supply Voltage (Vdd) | 26 V | 26 V | 26 V | 28 V | 26 V |
| Power Gain | 17.5 dB | 17.5 dB | 17.5 dB | 16.5 dB (approx) | 17.5 dB |
| Quiescent Current (Idq) | 700 mA | 700 mA | 700 mA | 900 mA (approx) | 700 mA |
| Lead-Free / RoHS | Yes (N suffix) | Yes | Yes | Yes | No (legacy lead-bearing) |
| Packaging Form | Tape & Reel | Bulk | Short-run tape | Tape & Reel | Tape & Reel |
关键差异点
- Lead-free RoHS-compliant successor to MRF5S9101MR1 （对比 MRF5S9101MR1)
- Cost-optimized 100 W GSM PA solution （对比 MRFE6S9125NR1)
- Matched Doherty carrier/peaking pair availability （对比 Discrete competitor LDMOS parts)
设计说明
At 100 W CW output, the MRF5S9101NR1 typically dissipates 60–80 W internally. The TO-270 WB-4 plastic overmold package requires a bolted aluminum heatsink or chassis-mount cold plate - PCB copper area alone is insufficient. Estimated: with theta_JC = 0.4 C/W (typical for this package family) and 70 W dissipation, junction-to-case delta is ~28 C. At 60 C case temperature (forced-air heatsink), Tj ~88 C, leaving ample margin to the 200 C absolute maximum.
The TO-270 WB-4 flange is the RF/DC ground reference. Use a low-impedance ground via fence around the package perimeter - minimum 8 vias at 0.5 mm drill, plated through to a continuous ground plane on the bottom layer. Gate and drain matching networks should use microstrip on the top layer with the substrate thickness (typically 0.508 mm Rogers RO4350B) chosen for 50 ohm characteristic impedance at the operating frequency. Keep gate lead length below 5 mm to prevent parametric oscillation at 17.5 dB gain.
Three common pitfalls: (1) Exceeding the 28 V maximum drain voltage during hot-switching transients - add a 33 V TVS clamp across the drain supply; (2) Driving the gate above +12 V - the gate breakdown is 20 V, but exceeding +10 V forward biases the gate junction and destroys the device. Use a regulated gate bias supply; (3) Operating into a high VSWR load without an output isolator - the device is rugged to 10:1 VSWR at rated power, but prolonged mismatch at 5:1 can degrade reliability. Always terminate the output with an isolator or circulator in production designs.
For multilayer PA boards, dedicate a continuous copper pour on the top layer under the device flange and stitch to the bottom ground plane with 16+ plated-through vias. Use Rogers RO4350B or RO4003C substrate (Dk ~3.5) for the matching networks; FR-4 is acceptable for the bias and control circuitry but introduces higher loss at 900 MHz. Solder the flange to a copper pad with thermal vias - the recommended footprint pad dimensions are in the NXP datasheet mechanical section (CASE 1486-03).
At 17.5 dB gain, the MRF5S9101NR1 can oscillate parasitically if input/output matching networks are not properly isolated. Place a 50 ohm resistive pad or ferrite bead at the gate input, and ensure the drain and gate traces are physically separated by at least 5 mm of ground plane to break the feedback path. Adding a small (3–8 pF) bypass capacitor from gate to ground near the gate pin helps stabilize the device against out-of-band oscillations. If oscillation is observed in production, sweep with a spectrum analyzer from 100 MHz to 3 GHz with the RF input terminated.
合规信息
Lead-free terminations confirmed by N suffix (transition from MRF5S9101MR1). RoHS and REACH compliance stated by NXP product page. Not AEC-Q100 qualified - this part is not intended for automotive-grade applications. Halogen-free status not explicitly listed in the verified web data.
