MRF6S24140HSR5 - 28W 2.4GHz RF Power LDMOS | NXP Semiconductors
料号： MRF6S24140HSR5 ✓ 量产中| 数量 | 单价 | 小计 |
|---|---|---|
| 1 | $38.5 | $38.50 |
| 10 | $35.1 | $351.00 |
| 100 | $30.85 | $3,085.00 |
| 500 | $27.2 | $13,600.00 |
| 1,000 | $24.5 | $24,500.00 |
MRF6S24140HSR5 概述
An RF power LDMOS transistor is a specialized power MOSFET optimized for high-frequency amplification in the kilowatt-to-milliwatt range, where its lateral structure delivers high breakdown voltage, high gain, and good thermal performance. It belongs to the broader taxonomy of RF power transistors (RF MOSFETs), which are a subclass of discrete semiconductors used in the final stages of RF transmitters. LDMOS technology is the dominant choice for sub-3 GHz high-power applications because it offers an excellent trade-off between RF performance, ruggedness, and cost.
Key specifications include 28 V nominal drain voltage, a tested output power of 28 W CW, 15.2 dB typical power gain at 2.39 GHz, and 1.3 A typical quiescent drain current. The device is internally matched for the 2.4-2.5 GHz band, simplifying PCB integration by reducing the external matching network to a small number of components. The NI-880S ceramic package provides a low thermal resistance path from the die to the heatsink, enabling continuous-wave operation at full rated power.
The MRF6S24140HSR5 uses NXP's HV6 LDMOS technology, which provides high drain breakdown voltage for reliable operation at 28 V and strong RF performance compared with earlier HV5 and HV4 generations. This generation is widely accepted in WiMAX, point-to-point radio, and 2.4 GHz ISM applications where linearity and ruggedness are both critical.
Typical applications include 2.4 GHz WiMAX base-station final-stage power amplifiers, industrial RFID readers, point-to-multipoint radio links, and the RF power stage of commercial microwave ovens and other ISM-band equipment operating in the 2400-2500 MHz range. The wideband gain response also supports adjacent applications such as medical RF ablation and industrial heating.
When designing with this part, ensure the heatsink thermal resistance is sized to keep the die junction temperature below 200 °C at full CW power. Use NXP's recommended gate bias sequencing and drain decoupling layout from the datasheet reference design to preserve RF stability and broadband matching.
This page synthesizes distributor pricing, parametric drop-in alternatives, and practical design notes for the MRF6S24140HSR5 - information not collected in a single place in the NXP datasheet alone.
直接替换替代料： MRF6S24140HSR5 ——相同封装，引脚兼容。需要 PCB 改动的不同封装料号已排除。
快速对比工具——选择替代料号进行并排对比：
MRF6S24140HR5
✅ 直接替换📋 参考替代料（不在目录中）
MRF6S24250HSR5
✅ 直接替换📋 参考替代料（不在目录中）
MRF6S24190HSR5
✅ 直接替换📋 参考替代料（不在目录中）
MRF6S23100HSR5
✅ 直接替换📋 参考替代料（不在目录中）
MRF6S27015HSR5
✅ 直接替换📋 参考替代料（不在目录中）
MRF6S24140HSR5 最大额定值与电气特性
| 晶体管类型 | LDMOS RF Power MOSFET |
| Technology | HV6 (High-Voltage 6th Generation) LDMOS |
| Drain-Source Voltage Rating | 68 V (rated) |
| Nominal Drain Voltage (Operating) | 28 V |
| Test Frequency | 2.39 GHz |
| Output Power (CW) | 28 W |
| Power Gain (typ) | 15.2 dB |
| Drain Current (typ at rated Pout) | 1.3 A |
| 封装 | NI-880S (SOT-979 ceramic) |
| 安装类型 | Surface Mount / Flange Mount |
| Frequency Band | 2.4 GHz to 2.5 GHz ISM band |
| Operating Mode | CW (continuous wave) capable |
| Lead-Free | Yes (per NXP product family) |
| RoHS 状态 | Compliant |
MRF6S24140HSR5 ni-880s (sot-979 ceramic) 引脚配置指南
MRF6S24140HSR5（ni-880s (sot-979 ceramic) 封装）的引脚配置。 该功率器件具有栅极、漏极和源极端子。对于无极性封装，请参阅制造商数据手册以了解确切的引脚 1 方向和封装尺寸细节。常见应用包括电源设计、电机驱动和负载开关。
暂无详细引脚数据： MRF6S24140HSR5.
请参阅 数据手册 以查看完整引脚配置。
典型应用
MRF6S24140HSR5 适用于 6 应用s: 2.4 GHz WiMAX Base-Station Final-Stage PA, Industrial RFID Reader Transmitter, Point-to-Multipoint Radio Link Final Stage, Commercial Microwave Oven RF Generator, Medical RF Ablation 2.4 GHz Front-End, Industrial Heating & Plasma 2.4 GHz Source.
2.4 GHz WiMAX Base-Station Final-Stage PA
The MRF6S24140HSR5 is ideally suited as the final-stage power amplifier in 2.3-2.7 GHz WiMAX base-station transmitters. Its 28 W CW output at 2.39 GHz with 15.2 dB typical gain and 28 V bias lets the PA drive sector antennas for fixed-wireless last-mile coverage. Compared with lower-power LDMOS, this part delivers the linear headroom needed for OFDM modulation while keeping DC-RF efficiency reasonable. Internally matched for 2.4-2.5 GHz, it dramatically simplifies the output-matching network on the PCB. Engineers typically pair it with NXP's driver-stage MRF6S19060HSR5 or similar HV6 family drivers and use the NXP reference design for the bias-sequencing and harmonic-filter sections.
推荐
Industrial RFID Reader Transmitter
In 2.4 GHz industrial RFID reader transmitters, the MRF6S24140HSR5 supplies the high-CW RF power that interrogates tags over the required read range. Its 28 W output and 15.2 dB gain produce the link margin needed to read passive tags in warehouses, logistics tunnels, and dock-portal installations. LDMOS technology gives better ruggedness into mismatched reader antennas than bipolar alternatives, reducing field failures when readers are deployed near metal structures. The NI-880S ceramic package offers a low thermal-resistance path so the reader can run CW without a complex liquid-cooling system. Recommended companion parts include circulators/isolators and a harmonic-filter network specified by the reader system integrator.
推荐
Point-to-Multipoint Radio Link Final Stage
For 2.4 GHz point-to-multipoint and point-to-point radio links, the MRF6S24140HSR5 serves as the linear RF power amplifier at the subscriber or base-station head end. Its 15.2 dB gain and 28 W CW output translate directly into higher EIRP and longer link range at a given modulation scheme. Designers favor HV6 LDMOS for this role because it is more tolerant of antenna VSWR events than older silicon bipolar devices. The NI-880S package is flange-mountable to a chassis heatsink, which keeps the temperature rise low even at continuous duty cycles. Typical reference designs include a broadband matching PCB, a circulator for VSWR protection, and a feedback path for adaptive power control.
推荐
Commercial Microwave Oven RF Generator
In industrial and commercial 2.45 GHz microwave heating and oven systems, the MRF6S24140HSR5 is a strong candidate for the magnetron-driver RF stage. Its continuous-wave 28 W capability and high breakdown voltage (68 V rated) match the duty cycle and load conditions of magnetrons that demand high RF drive. LDMOS provides cleaner CW drive and better load-mismatch tolerance than vacuum-tube alternatives in modern solid-state oven designs. The ceramic NI-880S package simplifies integration into a sealed waveguide-coupled heating head. System integrators pair this PA with a dedicated microcontroller-managed closed-loop power control to regulate delivered microwave power to the load.
推荐
Medical RF Ablation 2.4 GHz Front-End
The MRF6S24140HSR5 can serve as the CW RF power source in 2.4 GHz medical ablation and diathermy equipment where precise, controllable RF power is delivered to tissue loads. Its 15.2 dB gain and 28 W output give clinicians enough headroom to tune delivered power between low and high set-points across a wide load range. LDMOS devices are routinely used in this role because of their linear response and tolerance to varying tissue impedance (VSWR). The NI-880S package is robust enough for the sterilization cycles typical of clinical hardware. Designers must add safety interlocks, redundant thermal shutdowns, and full IEC 60601 EMI filtering around this stage.
推荐
Industrial Heating & Plasma 2.4 GHz Source
In industrial plasma-generation and RF heating systems operating near 2.45 GHz, the MRF6S24140HSR5 acts as the CW RF power amplifier that excites the applicator. Its 28 W class output suits small-to-mid scale processes, while the NI-880S ceramic package allows direct flange mounting to a process-head heatsink. Compared with bipolar or GaN-on-SiC alternatives, this HV6 LDMOS offers a more favorable cost-per-watt for continuous industrial duty. The 68 V drain breakdown gives margin against load transients in plasma ignition events. A circulator/isolator is strongly recommended between the PA output and the plasma load to protect the device.
推荐
推荐产品汇总
工程参考数据： MRF6S24140HSR5 ——对比、设计指导和合规信息。
选型指南
与替代料对比
| 参数 | 本产品 | MRF6S24140HR5 | MRF6S24250HSR5 | MRF6S24190HSR5 | MRF6S23100HSR5 | MRF6S27015HSR5 |
|---|---|---|---|---|---|---|
| Package | NI-880S (SOT-979 ceramic) | NI-880 HR5 | NI-880S - same | NI-880S - same | NI-880S - same | NI-880S - same |
| Brand | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors |
| Technology | HV6 LDMOS | HV6 LDMOS | HV6 LDMOS | HV6 LDMOS | HV6 LDMOS | HV6 LDMOS |
| Nominal Drain Voltage | 28 V | 28 V | 28 V | 28 V | 32 V (typical) | 28 V |
| Output Power (CW) | 28 W at 2.39 GHz | 28 W | ~58 W (class) | ~50 W (class) | ~100 W pulsed | ~15 W |
| Test Frequency | 2.39 GHz | 2.39 GHz | 2.45 GHz | 2.45 GHz | 2.3 GHz | 2.7 GHz |
关键差异点
- Internally matched for 2.4-2.5 GHz ISM band （对比 MRF6S24140HR5)
- Higher output power headroom vs MRF6S27015HSR5 （对比 MRF6S27015HSR5)
- Lower power consumption vs MRF6S24250HSR5 （对比 MRF6S24250HSR5)
设计说明
At 28 V drain bias and 28 W CW output the MRF6S24140HSR5 dissipates significant heat in the NI-880S flange. Estimated: with PDISS ≈ (VDD · ID) − POUT ≈ (28 V · 1.3 A) − 28 W ≈ 8.4 W. Use a heatsink sized so that θSA ≤ (TJ_MAX − TA)/PDISS; for TJ_MAX = 200 °C and TA = 70 °C this implies θSA ≤ ~15 °C/W. Always verify with a thermal sensor at the flange during final characterization. Estimated: this thermal budget must be confirmed against the datasheet's thermal-resistance value once verified.
Place gate and drain bias feed networks directly at the device leads with minimum trace length; keep 50 Ω microstrip or stripline geometries short to preserve internal matching. Add a broadband harmonic filter at the output (typically a 2nd and 3rd harmonic stub) per the NXP reference design. Use a low-impedance ground connection from the NI-880S flange to the chassis; thermal compound or a soldered flange is required. Keep the PCB dielectric and copper thickness consistent with NXP's evaluation board to maintain the published input/output match.
Never operate the MRF6S24140HSR5 without proper drain sequencing - gate bias must be applied before, and removed after, the drain supply to prevent parametric shift. Avoid open-circuit or short-circuit RF load conditions; add a circulator/isolator between the PA output and the antenna or applicator. Do not exceed 68 V drain-source breakdown under any transient. Confirm that the gate bias supply has low noise; a noisy gate supply will modulate the carrier and degrade EVM/ACPR in OFDM systems like WiMAX.
合规信息
RoHS and REACH compliant per NXP product family documentation. AEC-Q100 is not applicable - this is an RF power discrete, not an automotive-grade IC. Lead-free reflow profile per JEDEC J-STD-020.
