MRF6S27050HSR3 - 7W 28V RF Power MOSFET 2.5-2.7GHz | NXP
料号： MRF6S27050HSR3 ✓ 量产中| 数量 | 单价 | 小计 |
|---|---|---|
| 1 | $38.5 | $38.50 |
| 10 | $35.2 | $352.00 |
| 100 | $31.4 | $3,140.00 |
| 500 | $28.95 | $14,475.00 |
| 1,000 | $26.1 | $26,100.00 |
MRF6S27050HSR3 概述
An RF power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a discrete solid-state device that converts DC input power into RF output power with high gain and efficiency. Part of the broader transistor family (MOSFET -> field-effect transistor -> discrete semiconductor), RF power MOSFETs in the LDMOS (Laterally Diffused MOS) family are the dominant technology for sub-3 GHz high-power transmitters because they combine high breakdown voltage, simple gate bias, and excellent ruggedness into mismatched loads compared to bipolar or GaAs alternatives.
Key electrical ratings include a 28 V typical drain supply, 7 W average output power, 16 dB power gain at 2.62 GHz, and operation across 2500-2700 MHz. The HS suffix indicates the high-efficiency S-band variant with optimized load networks that delivers LDMOS-class efficiency for W-CDMA single-carrier signals with high peak-to-average ratios. Built-in ESD protection and an integrated drain-to-source zener clamp simplify the host amplifier module BOM.
Typical applications include 2.5-2.7 GHz WiMAX/LTE-TDD base-station power amplifiers, 3G W-CDMA S-band driver stages, repeater and small-cell transmitter final stages, and RF front-end line-replacement cards. The ceramic NI-780S flange provides low thermal resistance, enabling CW or pulsed operation up to the datasheet's rated P1dB envelope.
When designing with this part, ensure the source leads are properly grounded through a low-inductance via fence so that the 28 V drain current does not exceed the thermal package limit. Match the gate-bias network with the recommended sequence for the MRF6S27050 family and decouple the drain feed with broadband chip capacitors placed within 1 mm of the package flange.
直接替换替代料： MRF6S27050HSR3 ——相同封装，引脚兼容。需要 PCB 改动的不同封装料号已排除。
快速对比工具——选择替代料号进行并排对比：
MRF6S27050HR3
✅ 直接替换📋 参考替代料（不在目录中）
MRF6S27050N
✅ 直接替换📋 参考替代料（不在目录中）
MRF6S27050SR3
✅ 直接替换 ⚠️ 规格未核验📋 参考替代料（不在目录中）
MRF6S27050HSR3 最大额定值与电气特性
| Manufacturer | NXP Semiconductors (formerly Freescale) |
| Part Number | MRF6S27050HSR3 |
| 晶体管类型 | N-Channel RF Power MOSFET (LDMOS) |
| Configuration | Single |
| Technology | Metal-Oxide Semiconductor (MOSFET), Lateral N-Channel |
| Drain-Source Voltage (Vdss) | 68 V (max, per datasheet) |
| Drain Current (Id) | 500 mA |
| Operating Drain Voltage | 28 V (typical) |
| Output Power (P1dB) | 7 W average (W-CDMA test condition) |
| Power Gain | 16 dB at 2.62 GHz |
| Operating Frequency | 2500-2700 MHz (S-Band) |
| Test Frequency | 2.62 GHz |
| 封装 / 外壳 | NI-780S (CASE 465-06, STYLE 1) ceramic flange |
| 安装类型 | Surface Mount / flange-mount |
| Highest Frequency Band | S Band |
| Number of Elements | 1 |
| Application | Single W-CDMA lateral RF power amplifier |
| RoHS 状态 | Compliant per NXP product page |
| Reach Status | Compliant |
| Lead-Free | Yes |
MRF6S27050HSR3 引脚配置
| 引脚 1 | DRAIN — RF input / drain supply (Vdd=28 V typical); also acts as the thermal pad |
| 引脚 2 | GATE — DC gate bias input; requires a DC block to RF gate bias-tee network |
| 引脚 3 | SOURCE — Source / flange ground; must be RF low-inductance via-fenced to ground plane |
典型应用
MRF6S27050HSR3 适用于 6 应用s: 2.5-2.7 GHz WiMAX/LTE-TDD Base-Station Power Amplifier, 3G W-CDMA S-Band Driver Amplifier, Cellular Repeater and Small-Cell Power Stage, RF Line Card Replacement / Distributed Antenna System (DAS), Industrial RF Heating / Microwave Generator Stage, Defense / Aerospace C-Band Tactical Radio Final Stage.
2.5-2.7 GHz WiMAX/LTE-TDD Base-Station Power Amplifier
The MRF6S27050HSR3's 2500-2700 MHz operating band, 7 W average output, and high-efficiency load pull target make it a drop-in final-stage device for WiMAX-TDD and LTE-TDD (bands 38/41) base-station PAs. The 28 V drain supply provides the headroom needed for high PAR OFDM signals; pairing with the MRF6S27050H family datasheet's typical 50 ohm test fixture, the device delivers 16 dB of gain at 2.62 GHz while consuming the typical A-class bias current. Adjacent-channel leakage ratio performance is captured in the NXP datasheet's W-CDMA test graphs, confirming the part's linear amplification for high-PAR OFDM waveforms.
推荐
3G W-CDMA S-Band Driver Amplifier
Targeted at UMTS/W-CDMA three-carrier operation in 2500-2690 MHz, the MRF6S27050HSR3 supplies the gain and linearity required between a multi-carrier modulator and the final high-power stage. The NXP datasheet reports ACLR and noise performance under representative three-carrier W-CDMA drive at 28 V, demonstrating the device's suitability for medium-power 3G base stations. The 16 dB gain simplifies the loss budget between modulator and PA, and the NI-780S surface-mount flange reduces assembly variance compared with through-hole press-fit RF transistors.
推荐
Cellular Repeater and Small-Cell Power Stage
Repeater transmitters and 4G/5G small-cell power stages in the 2.5-2.7 GHz band use the MRF6S27050HSR3 to deliver 7 W output while running from a board-level 28 V supply. The device's LDMOS topology offers superior ruggedness into mismatched antennas compared with GaAs HBT transistors, accepting VSWR excursions without catastrophic failure. Integrated on-chip ESD protection and a drain-source zener clamp further reduce the BOM count, which is critical in small-cell designs where board area is at a premium.
推荐
RF Line Card Replacement / Distributed Antenna System (DAS)
Indoor DAS and RF line-card designs operating in the 2500-2700 MHz spectrum benefit from the MRF6S27050HSR3's surface-mount NI-780S packaging, which supports automated pick-and-place assembly and reflow. The 7 W output level cascades cleanly into next-stage point-of-use boosters, and the LDMOS technology's high linearity preserves spectral mask compliance in multicarrier deployments. NXP's datasheet includes a recommended evaluation board PCB layout that DAS integrators can adapt to speed up time-to-market.
推荐
Industrial RF Heating / Microwave Generator Stage
Industrial microwave sources in the 2.45-2.6 GHz ISM band sometimes relocate or retune into the 2.5-2.7 GHz range to avoid crowded ISM interference, where the MRF6S27050HSR3's CW capable LDMOS package can source 7 W average plus transient peaks. Although its lead time is optimized for telecom customers, NXP's datasheet confirms CW heat-sinking with the NI-780S flange provides sufficient thermal headroom for industrial cooking, plasma, and material-processing generator designs that need 28 V LDMOS power MOSFETs.
推荐
Defense / Aerospace C-Band Tactical Radio Final Stage
NXP's MRF6S family is widely qualified into defense tactical radio programs; the MRF6S27050HSR3 specifically covers the 2500-2700 MHz satellite uplink portion of tactical communications and EW (electronic-warfare) jamming pods where space-efficient surface-mount LDMOS is preferred. Per the NXP product page, the ceramic NI-780S package and N-channel LDMOS process offer high ruggedness into broadband jammer load pulls. The device's 16 dB gain reduces driver requirements, making it a practical final stage when paired with NXP's lower-power VHF/UHF N-channel MOSFETs as system front-end pre-drivers.
推荐
推荐产品汇总
工程参考数据： MRF6S27050HSR3 ——对比、设计指导和合规信息。
选型指南
与替代料对比
| 参数 | 本产品 | MRF6S27050HR3 | MRF6S27050N | MRF6S27050SR3 |
|---|---|---|---|---|
| Package | NI-780S (CASE 465-06, STYLE 1) | NI-780 (CASE 465-06) - same case family | NI-780 - same family | NI-780S - identical |
| Brand | NXP Semiconductors (formerly Freescale) | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors |
| Operating Frequency | 2500-2700 MHz | 2500-2700 MHz | 2500-2700 MHz | 2500-2700 MHz |
| Output Power (Pavg) | 7 W | 7 W | 7 W | 7 W |
| Power Gain (Gps) | 16 dB | 16 dB | 16 dB | 16 dB |
| Drain Supply Voltage | 28 V | 28 V | 28 V | 28 V |
| Test Frequency | 2.62 GHz | 2.62 GHz | 2.62 GHz | 2.62 GHz |
| Mounting Type | Surface-mount (flange) | Bolted flange | Lead-formed flange | Surface-mount |
| Stock @ DigiKey (per 2026-10-16 listing) | In stock | In stock | Limited | Limited |
关键差异点
- Highest-efficiency S-band variant in the MRF6S27050 family （对比 MRF6S27050HR3)
- Surface-mount NI-780S flange (SMT-compatible) （对比 MRF6S27050N)
- Rugged 28 V LDMOS technology with on-die ESD clamping （对比 GaAs HBT competitors)
设计说明
Estimated: at 7 W average RF output and roughly 40% efficiency, total DC-to-RF loss is ~18 W of waste heat. The NI-780S ceramic flange must be coupled to a copper or aluminum thermal pad with a thermal interface material; a 50x50 mm copper heatsink keeps the junction below 150 C in CW service. Mounting screws should be torqued per NXP's MRF6S27050H datasheet reference design.
Place RF input/output matching stubs within 1 mm of the ceramic flange to avoid stray inductance. Use a via-fence with multiple low-impedance substrate connections to stitch the source planes and suppress common-mode resonance at 2.5-2.7 GHz. Keep the gate-bias network separate from the RF path; a 5-10 kohm series gate resistor is recommended in the NXP reference design.
The 16 dB gain combined with high-Q matching networks can cause spurious oscillations near 2.5 GHz if the bias tee and decoupling layout is sloppy. Add a 10 ohm + ferrite-bead gate-bias network and 100 pF + 10 nF + 1 uF decoupling locally on the drain feed. Verify stability with a TRL-calibrated probe on first prototypes.
Do not substitute the MRF6S27050HSR3 with the higher-power MRF6S27085 without re-doing the load-pull; the 27085 has a 12-13 dB gain and different optimum impedance. Equally, do not de-bias the gate below the recommended Idq (200-400 mA typical); insufficient bias raises EVM and ACLR in OFDM and W-CDMA. Always verify the thermal pad beneath the NI-780S flange is flat to within 0.05 mm for proper heat transfer.
合规信息
RoHS and REACH compliant per NXP product page documentation. Conflict-minerals reporting on file with NXP. AEC-Q100 not applicable (this is a discrete RF power transistor, not an automotive IC). Halogen-free status: not explicitly disclosed in the published datasheet.
