MRF7S19170HSR3 - 50W 1.99GHz LDMOS RF Power Transistor | NXP
料号： MRF7S19170HSR3 ✓ 量产中| 数量 | 单价 | 小计 |
|---|---|---|
| 1 | $145 | $145.00 |
| 10 | $132.5 | $1,325.00 |
| 100 | $118.75 | $11,875.00 |
| 250 | $108.2 | $27,050.00 |
| 500 | $99.4 | $49,700.00 |
MRF7S19170HSR3 概述
An RF power MOSFET (LDMOS) is a laterally-diffused metal-oxide-semiconductor transistor optimized for high-power, high-frequency amplification in the 0.5-3 GHz range. Within the broader RF semiconductor hierarchy, it sits between small-signal RF MOSFETs and traveling-wave tube or GaN power amplifiers, providing the dominant cellular base station transistor technology through the 4G LTE era. LDMOS parts like the MRF7S19170HSR3 are favored over bipolar transistors for their high gain, single-polarity biasing, and inherent ruggedness into high VSWR loads.
Key features include 17.2 dB typical power gain, 50 W average output power (peak envelope power > 200 W typical for W-CDMA), 65 V drain-source breakdown rating, integrated ESD protection, and an internally matched input that simplifies PCB-level matching networks. The NI-880S package provides a low thermal-resistance path to the system heatsink, critical for continuous-wave base station duty cycles where junction-to-case temperature drives long-term reliability.
The MRF7S19170HSR3 uses NXP's HV7 LDMOS process, which places source, body, and drain laterally on the silicon die. This layout minimizes parasitic capacitance, raises breakdown voltage, and supports the high peak-to-average ratios required by multicarrier W-CDMA signals. The die is then packaged in a metal-ceramic NI-880S flange for direct mounting to a copper or aluminum spreader.
Typical applications include CDMA2000, W-CDMA, and multi-carrier GSM edge base station power amplifiers, Doherty final-stage driver positions, and broadband 1.9 GHz industrial/scientific RF amplifiers. The 1.93-1.99 GHz band covers US PCS and most global UMTS band allocations, making this part a workhorse for legacy 3G infrastructure retrofits and replacements.
When designing with this part, pay careful attention to lead-free solder reflow profiles (the device's Ni-Au lead finish demands a controlled peak temperature around 250-260 C), provide adequate via fencing around the RF input/output traces, and ensure the bolt-down flange is torqued to the heatsink spec so thermal resistance remains within the datasheet maximum.
This page synthesizes NXP distributor stock, parametric-equivalent RF LDMOS candidates, and practical Doherty PA design notes not consolidated in the original Freescale/NXP datasheet alone.
直接替换替代料： MRF7S19170HSR3 ——相同封装，引脚兼容。需要 PCB 改动的不同封装料号已排除。
本系列中的变体
可与以下型号直接替换的同系列型号： MRF7S19170HSR3 （相同外形与封装尺寸） ——差异在于 Frequency Band, Manufacturer, Mounting Style, Package / Case, Power Gain (typ).
快速对比工具——选择替代料号进行并排对比：
MRF7S19170HR3
✅ 直接替换📋 参考替代料（不在目录中）
MRF7S19080HSR3
✅ 直接替换📋 参考替代料（不在目录中）
MRF7S19170HSR3 最大额定值与电气特性
| Manufacturer | NXP Semiconductors (formerly Freescale) |
| Part Status (Rochester) | Active - Rochester Electronics LLC authorized stock |
| 晶体管类型 | LDMOS (N-Channel Enhancement-Mode Lateral MOSFET) |
| Technology | HV7 LDMOS |
| Frequency Band | 1930-1990 MHz (US PCS / UMTS Band 1 / DCS-1900) |
| Test Frequency | 1.99 GHz |
| Drain-Source Voltage (Max) | 65 V |
| Operating Drain Voltage | 28 V (typical) |
| Test Drain Current | 1.4 A |
| Output Power (Avg) | 50 W (W-CDMA) |
| Power Gain (typ) | 17.2 dB |
| 封装 / 外壳 | NI-880S (ceramic flange, bolt-down) |
| 安装类型 | Chassis / Heatsink Mount (flange) |
| Operating Mode | Class AB / Class C |
| Modulation Supported | CDMA, W-CDMA, multi-carrier GSM, EDGE |
| Lead Finish | Ni-Au (lead-free compatible) |
| RoHS 状态 | Compliant (per NXP product page) |
MRF7S19170HSR3 ni-880s (ceramic flange, bolt-down) 引脚配置指南
MRF7S19170HSR3（ni-880s (ceramic flange, bolt-down) 封装）的引脚配置。 该功率器件具有栅极、漏极和源极端子。对于无极性封装，请参阅制造商数据手册以了解确切的引脚 1 方向和封装尺寸细节。常见应用包括电源设计、电机驱动和负载开关。
暂无详细引脚数据： MRF7S19170HSR3.
请参阅 数据手册 以查看完整引脚配置。
DC 安全工作区 (estimated envelope for 65 V drain breakdown)
典型应用
MRF7S19170HSR3 适用于 6 应用s: W-CDMA / CDMA2000 Base Station Power Amplifier Final Stage, Doherty Final Stage (Peaking Path), Multi-Carrier GSM / EDGE Power Amplifier, Industrial / Scientific 1.9 GHz RF Amplifier, Broadband Driver for Higher-Power LDMOS Final Stage, Legacy 3G Network Refurbishment / Replacement.
W-CDMA / CDMA2000 Base Station Power Amplifier Final Stage
The MRF7S19170HSR3 is the canonical final-stage LDMOS for 1.93-1.99 GHz macro-cell base station power amplifier modules. The 50 W average W-CDMA rating, 17.2 dB gain, and 65 V drain breakdown provide the headroom needed for peak-to-average ratios above 6 dB on multi-carrier 3G signals. Placed between a driver-stage LDMOS and a 30 dB coupler/directional detector, it dissipates up to 90 W at 28 V under CW drive, so the NI-880S flange must be bolted to a copper spreader with thermal compound and torqued to the datasheet spec. Unlike GaN at this band, the HV7 LDMOS gives lower quiescent bias drift and proven long-term reliability in continuous 24/7 base station duty.
推荐
Doherty Final Stage (Peaking Path)
The MRF7S19170HSR3 is widely used as the peaking amplifier in 1.93-1.99 GHz Doherty PAs that target 50-60 W average output with high back-off efficiency. Its 17.2 dB gain matches the carrier-stage gain when biased Class C, preserving Doherty load-modulation symmetry. Engineers typically bias the peaking device at 1.0-1.2 A quiescent, well below the 1.4 A test condition, to keep the carrier-to-peaking phase offset within +/- 5 degrees across the 60 MHz bandwidth. The NI-880S flange enables independent heatsink mounting for the peaking path, critical because the peaking transistor runs hotter than the carrier under typical signal statistics.
推荐
Multi-Carrier GSM / EDGE Power Amplifier
For multi-carrier GSM and 8-PSK EDGE base stations at 1.93-1.99 GHz, the MRF7S19170HSR3 supports up to 8 carriers with 50 W total average output while maintaining ACPR below -38 dBc at the antenna interface. The HV7 LDMOS linearity characteristic makes it a strong fit for the constant-envelope portions of GSM bursts, and external digital predistortion (DPD) further extends efficiency. Pair with a circulator or isolator at the output to protect against high VSWR from antenna feedline faults, since the device's ruggedness rating was specifically characterized for VSWR 5:1 at all phase angles.
推荐
Industrial / Scientific 1.9 GHz RF Amplifier
Outside cellular, the MRF7S19170HSR3 serves in industrial heating, plasma generation, and scientific particle accelerator RF sources at 1.93-1.99 GHz. Its 50 W CW capability and 65 V drain breakdown provide the voltage swing headroom required for Class C bias with high harmonic content. The bolt-down NI-880S flange simplifies integration into vacuum chamber RF feedthroughs where the flange is also the vacuum seal. Engineers should derate to 30-35 W average in continuous CW service to keep junction temperature below 200 C for 100,000-hour MTBF targets in industrial duty cycles.
推荐
Broadband Driver for Higher-Power LDMOS Final Stage
When designing a 100 W+ combined PA at 1.93-1.99 GHz, two MRF7S19170HSR3 devices can be used as a balanced driver pair feeding a higher-power final stage such as the MRF7S21190HSR3 or PTVA127002NB. The 17.2 dB gain gives the driver pair approximately 33 dB cascaded gain, which simplifies the gain budget when the final stage operates at 13-15 dB. The matched input simplifies the inter-stage 90-degree hybrid combiner design and reduces the need for tuning on the production line.
推荐
Legacy 3G Network Refurbishment / Replacement
Operators still maintaining 3G UMTS or CDMA2000 networks use the MRF7S19170HSR3 as a like-for-like replacement for original Freescale-built macro-cell PAs shipped between 2008 and 2018. Its identical die and matched internal I/O network mean no board respin is required - swap the original MRF7S19170H family device directly onto the existing heatsink and re-torque. Rochester Electronics maintains authorized long-term stock specifically for this refurbishment market, guaranteeing supply through 2030 and beyond for operators sunsetting 3G more slowly than initially planned.
推荐
推荐产品汇总
工程参考数据： MRF7S19170HSR3 ——对比、设计指导和合规信息。
选型指南
与替代料对比
| 参数 | 本产品 | MRF7S19170HR3 | MRF7S19080HSR3 |
|---|---|---|---|
| Brand | NXP Semiconductors (formerly Freescale) | NXP Semiconductors | NXP Semiconductors |
| Package | NI-880S bolt-down ceramic flange | NI-880S ear-mount ceramic (variant) | NI-880S bolt-down ceramic (same) |
| Frequency Range | 1930-1990 MHz | 1930-1990 MHz (same) | 1930-1990 MHz (same) |
| Output Power (Avg, W-CDMA) | 50 W | 50 W | 20-30 W (-50%) |
| Power Gain | 17.2 dB | 17.2 dB | 17.0 dB |
| Drain-Source Voltage (Max) | 65 V | 65 V | 65 V |
| Operating Drain Voltage | 28 V | 28 V | 28 V |
| Test Drain Current | 1.4 A | 1.4 A | 0.9 A |
| Mounting Style | Bolt-down flange | Ear-mount | Bolt-down flange |
| RoHS Compliance | Yes | Yes | Yes |
关键差异点
- Industry-standard 50 W 1.93-1.99 MHz LDMOS with multi-decade NXP/Freescale supply continuity （对比 MRF7S19080HSR3)
- Bolt-down flange mounting simplifies heatsink assembly （对比 MRF7S19170HR3)
- Higher power class vs macro-cell driver parts without changing footprint （对比 MRF7S21170HSR3)
设计说明
The NI-880S bolt-down flange must be mounted to a copper or aluminum spreader with thermal compound (e.g. Wakefield Type 120 or ShinEtsu X-23-7920-5) at a torque of 0.5-0.7 N-m per the NXP datasheet. Estimated: at 50 W W-CDMA average output and 6 dB PAR, total DC input power is approximately 130 W (28 V x 4.6 A), giving around 80 W dissipation. Junction-to-flange thermal resistance is below 0.7 C/W, so the flange must hold below 65 C for the die to stay under 150 C at full duty.
Use Rogers RO4350B or RO4003C substrate with 0.508 mm or 0.813 mm thickness for the input and output matching networks. The gate and drain lead landings should be 50 ohm microstrip with via fences on both sides. Place 100 pF and 1 nF bypass capacitors within 2 mm of each lead for Vgs bias decoupling. Add a 10 uF / 35 V tantalum reservoir on the drain bias line within 5 mm of the lead.
Keep the input and output traces physically separated by at least 10 mm to maintain > 30 dB isolation; the device's 17.2 dB gain leaves no margin if layout isolation is poor. Use a copper ground plane continuous beneath the device with at least 4 plated vias per mm of edge to suppress parallel-plate waveguide modes above 2 GHz. A small (1-2 pF) gate-to-drain neutralization capacitor is optional but recommended for production yield above 95% in Doherty layouts.
Do not exceed 28 V + 0.5 V transient drain voltage; the 65 V breakdown leaves only ~2x margin for load-mismatch transients at the MRF7S19170HSR3's 50 W output level. Always include a gate clamp circuit (e.g. 10 V zener diode on the gate bias line) to prevent ESD damage during handling - LDMOS gates are fragile. Estimated: at 4.6 A quiescent operating current, an in-rush limiter on the 28 V rail must hold dI/dt below 5 A/ms to avoid secondary breakdown.
For Doherty applications, measure the phase offset between carrier and peaking paths with a vector network analyzer at 1930, 1960, and 1990 MHz - the offset must remain within +/- 5 degrees across the band. The MRF7S19170HSR3's S-parameters at the test bias (28 V, 1.4 A) are available in the NXP datasheet touchstone file; use them in your harmonic-balance design (Keysight ADS or AWR Microwave Office) to predict AM/AM and AM/PM before prototyping.
合规信息
RoHS compliant per NXP product page. Lead-free Ni-Au lead finish. Halogen-free status not explicitly stated on NXP MRF7S19170H datasheet; flag unknown. AEC-Q100 not applicable - this is a discrete RF power transistor, not an automotive IC.
