MRF7S21080HR3 - 22W, 2110-2170 MHz RF Power LDMOS | NXP
料号： MRF7S21080HR3 ✓ 量产中| 数量 | 单价 | 小计 |
|---|---|---|
| 1 | $38.5 | $38.50 |
| 10 | $34.2 | $342.00 |
| 100 | $29.85 | $2,985.00 |
| 500 | $27.1 | $13,550.00 |
| 1,000 | $24.95 | $24,950.00 |
MRF7S21080HR3 概述
An LDMOS (Laterally Diffused MOSFET) transistor is a type of power MOSFET optimized for RF amplification in the UHF to 3 GHz range. RF power transistors sit in the hierarchy: RF power transistor -> RF power amplifier -> wireless infrastructure component -> discrete semiconductor. Compared to earlier bipolar RF power devices, LDMOS offers higher gain, better thermal stability, and superior ruggedness into load mismatches. The lateral structure gives low feedback capacitance, enabling broadband operation and stable performance across production variation.
Key features of the MRF7S21080HR3 include typical drain efficiency of 32% at 22 W average W-CDMA output, ACPR of -38 dBc at 5 MHz offset, and integrated ESD protection. The device operates from a single 28 V rail and supports both Class AB and Class C bias topologies. Lateral MOSFET construction provides inherent thermal stability and gain linearity, allowing designers to push output power or back off for line-of-sight multicarrier linearity without device failure.
In a typical base-station PA, the MRF7S21080HR3 is the final stage in a Doherty or class-AB lineup, preceded by driver-stage MRF7S21080HSR3 or smaller NXP RF MOSFETs. The ceramic NI-780 package provides low thermal resistance to the system heatsink, with the source leads grounded directly through the flange. Designers apply gate bias with a negative supply and sequence VDD and VGG to prevent partial turn-on that would damage the device.
Designed for cellular-infrastructure PAs covering 2110-2170 MHz (UMTS Band 1, AWS, LTE band), the MRF7S21080HR3 also supports TD-SCDMA and PCN/PCS applications. Its broadband response allows one part to cover multi-band radios when paired with appropriate matching networks, reducing SKU count in production. Choose this part when a robust 28 V, ~22 W LDMOS with proven production pedigree is needed for urban-macro or outdoor small-cell base-station RF chains.
When evaluating thermal design, ensure the heatsink keeps the case below the maximum rated junction temperature during continuous W-CDMA operation; modest de-rating (output back-off of 1-2 dB) preserves long-term reliability. Designers should also provide adequate input-side harmonic terminations to meet 3GPP spectral-emission masks in production units.
直接替换替代料： MRF7S21080HR3 ——相同封装，引脚兼容。需要 PCB 改动的不同封装料号已排除。
本系列中的变体
可与以下型号直接替换的同系列型号： MRF7S21080HR3 （相同外形与封装尺寸） ——差异在于 Mounting Type, Technology, Transistor Type, Power Gain, Configuration.
快速对比工具——选择替代料号进行并排对比：
MRF7S21080HSR3
✅ 直接替换✓ 有现货
$71.5 / 个
查看数据手册 →MRF7S21080HR5
✅ 直接替换📋 参考替代料（不在目录中）
MRF8S9100HR5
✅ 直接替换📋 参考替代料（不在目录中）
MRF8HP21080HR5
✅ 直接替换✓ 有现货
$88 / 个
查看数据手册 →AFT27S010N
✅ 直接替换 ⚠️ 规格未核验📋 参考替代料（不在目录中）
MRF7S21080HR3 最大额定值与电气特性
| 晶体管类型 | LDMOS, N-Channel Enhancement-Mode |
| Technology | RF Power Field Effect Transistor (lateral MOSFET) |
| Frequency Band | 2110 MHz to 2170 MHz |
| Test Frequency | 2.11 GHz to 2.17 GHz |
| Rated Drain Voltage | 65 V |
| Test Supply Voltage (VDD) | 28 V |
| Quiescent Current (IDQ) | 800 mA |
| Output Power (Avg, W-CDMA) | 22 W Avg. |
| Power Gain | 18 dB |
| Drain Efficiency (typical) | 32 % |
| ACPR @ 5 MHz Offset | -38 dBc in 3.84 MHz channel |
| Output Signal PAR | 6.5 dB at 0.01% CCDF |
| Input Signal PAR | 7.5 dB at 0.01% CCDF |
| Channel Bandwidth | 3.84 MHz |
| 封装 | NI-780S-4S2S (NI-780, 3-pin ceramic, flange mount) |
| 安装类型 | Surface Mount / Flange Mount |
| Application | CDMA / W-CDMA / LTE base-station power amplifiers |
MRF7S21080HR3 引脚配置
| 引脚 1 | Gate — RF input gate; requires negative-bias sequencing before VDD application |
| 引脚 2 | Drain — RF output drain; tied to 28 V supply through matching network |
| 引脚 3 | Source / Flange — RF and DC ground; provides primary thermal path to heatsink via flange |
安全工作区 (DC) - MRF7S21080HR3
典型应用
MRF7S21080HR3 适用于 7 应用s: W-CDMA / LTE Base-Station Power Amplifier (Band 1, AWS), CDMA / Multicarrier Base-Station PAs, Doherty Final Stage (Main / Carrier PA), TD-SCDMA and Multi-Standard Cellular Infrastructure PAs, Industrial RF Heating / Defence RF Amplifiers, Macro-Cell 4G LTE Network Roll-outs, Outdoor Small-Cell and Pico-Cell Base Stations.
W-CDMA / LTE Base-Station Power Amplifier (Band 1, AWS)
The MRF7S21080HR3 is the reference final-stage transistor for 28 V, 22 W average W-CDMA and LTE power amplifiers in cellular base stations. Its 18 dB power gain, 32% drain efficiency, and -38 dBc ACPR at 5 MHz offset are precisely tuned for 3GPP spectral mask compliance in the 2110-2170 MHz band. Compared to GaN alternatives, this LDMOS part retains the standard 28 V system rail used in legacy macro basestations, simplifying PSU and redundancy design. Placed between the inter-stage matching network and the duplexer, it accepts a small-signal drive from NXP driver-stage LDMOS (e.g., a 2 W class device) and delivers the rated 22 W to the antenna chain. Designers must respect the bias-sequencing requirement (VG before VD) to prevent partial turn-on and device damage during power-up transients.
推荐
CDMA / Multicarrier Base-Station PAs
Designed into the original Freescale CDMA reference designs, the MRF7S21080HR3's 28 V rail and 800 mA quiescent bias deliver the linearity headroom required for multi-carrier CDMA PAs feeding sector antennas. NXP rates the device for class-AB and class-C operation, allowing the same part to cover constant-envelope and linear applications. Typical drain efficiency of 32% at 22 W average reduces heatsink and cooling-system load versus older bipolar RF power transistors. The NI-780 ceramic flange provides the thermal mass for continuous multicarrier duty; proper mounting torque per the datasheet is essential to keep Tj below the rated limit over the 5+ year service life of an outdoor macro basestation.
推荐
Doherty Final Stage (Main / Carrier PA)
In a Doherty architecture, the MRF7S21080HR3 serves as the main (carrier) amplifier for 2110-2170 MHz boosters where average efficiency must be preserved at back-off power levels. Its 18 dB gain and stable LDMOS characteristics allow designers to reach 6 dB modulation PAR while maintaining acceptable back-off efficiency. The lateral MOSFET structure tolerates the impedance swings inherent to Doherty load modulation, where the carrier device sees its load rotate between the optimum and high-impedance points. Compared to a balanced class-AB PA, a Doherty using this part offers an additional 4-6 points of efficiency at 8 dB back-off, materially reducing OPEX for high-traffic sectors. Quiescent current should be set per the NXP reference design (800 mA) to optimize gain and linearity over temperature.
推荐
TD-SCDMA and Multi-Standard Cellular Infrastructure PAs
Beyond 3GPP W-CDMA, the MRF7S21080HR3 is explicitly characterized for TD-SCDMA and PCN/cellular radio applications per the NXP datasheet. Class-C biasing can be applied for time-slot-based constant-envelope bursts used in TD-SCDMA base stations, where it provides high DC-to-RF efficiency at moderate linearity. The 2110-2170 MHz tuning and the device's broad RF bandwidth also let one carrier-board design serve multi-standard radio units with software-configurable mode switching. The NI-780 package's flange-mount construction suits outdoor unit (ODU) and tower-top amplifier (TTA) installations where ambient temperature swings demand robust mechanical and thermal interfaces. Designers integrating multiple NXP parts benefit from a common 28 V supply rail across different frequency-band PAs, reducing inventory and qualification effort.
推荐
Industrial RF Heating / Defence RF Amplifiers
Although not its primary market, the MRF7S21080HR3's 22 W CW-class output, rugged LDMOS construction, and broadband response from a 28 V rail are attractive for industrial RF heating instrumentation, laboratory amplifiers, and auxiliary defence RF subsystems. The lateral MOSFET design tolerates VSWR mismatches that would destroy less rugged bipolar or GaN HEMT devices, making it a robust choice for laboratory tests and field-deployable equipment where antenna mismatch cannot be fully controlled. Designers must still apply adequate harmonic filtering and thermal management; case-temperature monitoring is recommended for unattended industrial duty cycles. Compared to purpose-built industrial RF generators, this part offers a lower-volume-cost-per-watt path for low-rate defense and OEM heater applications.
推荐
Macro-Cell 4G LTE Network Roll-outs
Globally deployed 4G LTE networks are still expanding, especially in emerging markets where MRF7S21080HR3-class 28 V, 22 W LDMOS remains a cost-effective workhorse for the macro-cell transmitter chain. Designers targeting LTE Band 1 / AWS can drop this part into proven NXP reference designs to speed time-to-certification and reuse existing regulatory approvals. The mature NXP/Freescale supply chain offers stable lead-times for production volumes, helping operators meet multi-year rollout commitments. Engineering teams familiar with 28 V LDMOS device characterization will appreciate the part's predictable S-parameters and bias behavior, which shortens PA tuning cycles during lab bring-up. For brownfield LTE expansions where service life of 10+ years is expected, qualified established LDMOS devices remain a low-risk choice over newer GaN alternatives that may still have evolving long-term reliability data.
推荐
Outdoor Small-Cell and Pico-Cell Base Stations
MRF7S21080HR3's compact NI-780 ceramic package suits thermally constrained outdoor small-cell and high-power pico-cell radio heads where PCB area and heatsink volume are at a premium. At 22 W average W-CDMA output, a single part covers typical 2x2 MIMO sector PAs in urban small-cell deployments without the cost of a higher-output GaN chain. The 28 V rail simplifies compliance with Class-II ODU power-distribution architectures and PoE-fed small-cell head-ends that have a local 28 V conversion stage. Ruggedness against load mismatch and ESD events makes it deployable in street-furniture-mounted radios exposed to electrical interference from urban infrastructure. Choose this part where thermally conservative LDMOS design and proven production pedigree outweigh the multi-MHz bandwidth advantages of newer Airfast/AFT devices.
推荐
推荐产品汇总
工程参考数据： MRF7S21080HR3 ——对比、设计指导和合规信息。
选型指南
与替代料对比
| 参数 | 本产品 | MRF7S21080HSR3 | MRF7S21080HR5 | MRF8S9100HR5 | MRF8HP21080HR5 | AFT27S010N |
|---|---|---|---|---|---|---|
| Package | NI-780S-4S2S | NI-780S-4S2S (same) | NI-780S-4S2S (same) | NI-780S-4S2S (same) | NI-780S-4S2S (same) | NI-780 family equivalent |
| Brand | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors |
| Supply Voltage (VDD) | 28 V | 28 V (same) | 28 V (same) | 28 V (same band) | 50 V (~80% higher) | 28 V (same) |
| Frequency Band | 2110-2170 MHz | 2110-2170 MHz (same) | 2110-2170 MHz (same) | 728-960 MHz (lower band) | 2110-2170 MHz (same) | 728-960 MHz |
| Output Power (Avg) | 22 W | 22 W (same) | 22 W (same) | 100 W (higher) | 80 W (higher) | 10 W (lower) |
| Power Gain | 18 dB | 18 dB (same) | 18 dB (same) | 20 dB | 20 dB | 17 dB |
关键差异点
- Mature 28 V LDMOS reference design with -38 dBc ACPR （对比 MRF8HP21080HR5 (50 V class))
- Lower output power class enables cheaper BOM and smaller heatsink （对比 MRF8S9100HR5 (100 W avg))
- Proven production pedigree across global 4G LTE networks （对比 AFT27S010N (newer Airfast))
设计说明
The MRF7S21080HR3 NI-780 ceramic package relies on its metal flange as the primary thermal path to the heatsink. Apply the manufacturer-recommended mounting torque using a uniform thermal interface material (TIM, e.g. 0.05 mm indium or ShinEtsu X-23-7922-5 grease with 0.05 mm preform). Estimated: at 22 W average output with 32% drain efficiency the device dissipates ~46 W DC-input minus RF-output. Keep case temperature below the datasheet limit; design heatsink for Tj max minus a 25 C margin to ensure MTTF target across the 5+ year field duty of a macro basestation. Add a thermal sensor or NTC to the heatsink for runtime derating if forced-air cooling fails.
RF trace impedance must be controlled to 50 ohm on both gate (input) and drain (output) microstrip paths; keep the impedance transitions short to minimize parasitic feedback that could destabilize the LDMOS. Place the gate-bias decoupling network (typically 1 uF + 100 nF + 10 ohm resistor) within 3 mm of the gate lead. Ground the source flange with short bonds/ribbons to minimize common-source inductance, which directly degrades gain at 2110-2170 MHz and can cause parametric oscillation. Avoid routing any digital or switching-node signals over the RF layout area; the NI-780 case is also an RF ground, so keeping its perimeter via-fenced to the PCB main ground improves both stability and thermal conduction.
Implement a sequenced bias supply (negative gate supply applied first, 28 V drain supply ramped after) to prevent destructive partial turn-on of the MRF7S21080HR3. Use a dedicated gate-bias regulator with adjustable negative voltage from -5 V to 0 V and a 10 kohm gate resistor to isolate the bias from RF leakage. Add a gate-protection Zener clamp (typically 8-12 V) to shunt transient over-voltage during antenna mismatch events. Estimated: total DC draw at 22 W avg output is approximately (22/0.32) = 69 W DC, requiring a drain supply with at least 4 A average / 8 A peak capability per PA channel.
Common design errors with the MRF7S21080HR3 include: (1) applying VDD before VGG during power-up, which can drive the gate to zero bias and cause 4+ A drain surges that destroy the die; (2) omitting output harmonic terminations, leading to spurious emissions that fail 3GPP spectral mask; (3) underestimating heat dissipation in Doherty back-off operation, where the main amplifier may sit at higher average dissipation than Pout would suggest; (4) using too-low a supply-rail decoupling capacitance, which couples RF current into the DC bus and degrades ACPR. Always consult the NXP reference design appnote for the target frequency band before locking the schematic.
合规信息
Specific compliance statements for MRF7S21080HR3 were not explicitly present in the verified web data; most NXP NI-780 ceramic RF power devices meet RoHS but designers should request the latest material declaration from NXP for production sign-off. AEC-Q100 is not applicable - this is a non-automotive RF power transistor.
