STL60N3LLH5 - 30V, 6.3mOhm, 17A MOSFET | STMicroelectronics
料号： STL60N3LLH5 ✓ 量产中| 数量 | 单价 | 小计 |
|---|---|---|
| 1 | $0 | $0.00 |
| 10 | $0 | $0.00 |
| 100 | $0 | $0.00 |
| 500 | $0 | $0.00 |
| 1,000 | $0 | $0.00 |
STL60N3LLH5 概述
A power MOSFET is a voltage-controlled semiconductor used to switch or rectify current in electronic circuits. This N-channel device belongs to the hierarchy MOSFET, discrete semiconductor, and power-management component. Its low RDS(on) reduces voltage drop and heat generated during on-state conduction, while its surface-mount package supports automated assembly and compact PCB layouts.
The supplied manufacturer datasheet identifies an N-channel 30 V device with 0.0063 ohm RDS(on), 17 A nominal current capability, and STripFET V technology optimized for very low on-resistance and a strong RDS(on)-Qg figure of merit. These characteristics suit low-voltage DC power conversion, load switching, motor-control stages, and synchronous power-conversion circuits where every conduction-loss reduction improves efficiency.
The STL60N3LLH5 combines low on-state resistance with a low-profile PowerFLAT package measuring 5x6 mm. Its small land pattern can reduce board area compared with larger molded packages, provided that copper area and thermal vias are adequate. Because MOSFET performance depends strongly on switching frequency, gate-drive voltage, duty cycle, and cooling, the electrical limits and thermal conditions must be evaluated together rather than treated as independent ratings.
Typical uses include laptop and desktop power conversion, USB power switches, portable equipment, industrial control boards, and compact motor or actuator drivers. The device is especially relevant to 30 V or lower systems where the switching element must conduct frequent current transitions without introducing substantial conduction loss. A low-voltage DC/DC stage can use it on the high side of a synchronous buck converter, while a load-switch application benefits directly from its low RDS(on).
PCB design should use short, wide copper paths for drain and source, a Kelvin-style source connection when measuring current accurately, and an unobstructed gate trace with a nearby gate resistor. Input and output decoupling should be placed close to the associated circuit nodes. Thermal management remains critical because conduction loss scales with RDS(on), current, and duty cycle; a low package resistance does not eliminate the need to spread heat through the PCB.
This product record combines the verified manufacturer datasheet, distributor listings, and component-search results. It highlights the STL60N3LLH5's core switching characteristics while separating verified ratings from information that still requires confirmation from the manufacturer datasheet before a production release.
直接替换替代料： STL60N3LLH5 ——相同封装，引脚兼容。需要 PCB 改动的不同封装料号已排除。
快速对比工具——选择替代料号进行并排对比：
STL60NH3LL
✅ 直接替换📋 参考替代料（不在目录中）
STL65N3LLH5
✅ 直接替换📋 参考替代料（不在目录中）
STB70NF3LLT4
✅ 直接替换📋 参考替代料（不在目录中）
STSJ50NH3LL
✅ 直接替换📋 参考替代料（不在目录中）
STL60N3LLH5 最大额定值与电气特性
| Channel Type | N-channel |
| Drain-Source Voltage | 30 V |
| Continuous Drain Current | 17 A |
| On-State Resistance | 0.0063 ohm |
| Technology | STripFET V Power MOSFET |
| 封装 | PowerFLAT 5x6 mm |
| 安装类型 | Surface mount |
| Package Footprint | 5x6 mm PowerFLAT |
| Product Type | Power MOSFET |
| Primary Switching Function | High-frequency switching and rectification |
| RDS(on) x Qg Figure of Merit | Industry benchmark; exact value not provided |
| Gate Drive Power Loss | Low; exact value not provided |
| Avalanche Ruggedness | High; exact rating not provided |
STL60N3LLH5 5x6 mm powerflat 引脚配置指南
STL60N3LLH5（5x6 mm powerflat 封装）的引脚配置。 该功率器件具有栅极、漏极和源极端子。对于无极性封装，请参阅制造商数据手册以了解确切的引脚 1 方向和封装尺寸细节。常见应用包括电源设计、电机驱动和负载开关。
暂无详细引脚数据： STL60N3LLH5.
请参阅 数据手册 以查看完整引脚配置。
典型应用
STL60N3LLH5 适用于 6 应用s: Low-Voltage DC-DC Converter, USB Power Load Switch, Battery-Powered Portable Equipment, Industrial Control Power Stage, Motor and Actuator Driver, High-Density Power-Supply Board.
Low-Voltage DC-DC Converter
The STL60N3LLH5 fits a 30 V-class switching stage because its verified 0.0063 ohm RDS(on) helps reduce conduction loss when the MOSFET carries load current. The device can be used as a high-side or low-side element in a synchronous buck, boost-related, or other low-voltage power-conversion topology. Layout should keep drain and source paths short and wide, with the gate driven by a voltage-compatible low-side driver. Check switching transients, gate charge, SOA, and thermal conditions in the final design.
推荐
USB Power Load Switch
Use the STL60N3LLH5 where a compact MOSFET must switch a nominal low-voltage power rail with low on-state loss. Its 30 V rating provides the stated voltage class, while the 0.0063 ohm RDS(on) specification supports efficient conduction compared with a higher-resistance switch. The design must verify input transients, inrush behavior, SOA during hot-plug or fault conditions, and the thermal rise of the PowerFLAT 5x6 mm package. Gate control should prevent unwanted turn-on during startup.
推荐
Battery-Powered Portable Equipment
The STL60N3LLH5 is appropriate for battery-powered systems operating below the device's verified 30 V class when low conduction loss and small footprint are priorities. It can serve as a regulator switch, battery disconnect element, or auxiliary rail switch. The MOSFET's power rating must be evaluated against battery chemistry, peak load current, wiring resistance, and thermal conditions. Because battery systems can experience abrupt load changes, include gate protection, controlled rise time, and an appropriate current-limit strategy.
推荐
Industrial Control Power Stage
The STL60N3LLH5 can be considered for compact industrial control boards that switch 30 V or lower power domains. Its low RDS(on) specification is useful when the MOSFET is placed in a frequently conducting path, and PowerFLAT 5x6 mm construction supports compact layouts. Industrial equipment may have slower current ramps than telecom converters but stricter temperature and fault requirements, so verify the full SOA curve, avalanche behavior, thermal resistance, and production tolerances before release.
推荐
Motor and Actuator Driver
The STL60N3LLH5 may be used in low-voltage motor or actuator drive stages when the supply and switching transients remain inside the device's stated limits. Its low on-state resistance can improve efficiency in the conducting interval, while its surface-mount package helps reduce board size. Motor systems require careful attention to inductive spikes, freewheel paths, shoot-through timing, gate-driver voltage, and repetitive avalanche exposure. Use the manufacturer's complete electrical and SOA information rather than relying only on nominal current and RDS(on).
推荐
High-Density Power-Supply Board
The STL60N3LLH5 is relevant to high-density power boards that need a compact 30 V switching transistor with low conduction resistance. Its 5x6 mm PowerFLAT package allows placement near the switching node, but the benefit depends on excellent PCB layout and heat spreading. Use wide copper pours and multiple thermal vias where permitted, keep sensitive control traces away from high-dV/dt paths, and confirm that the exposed thermal interface follows the manufacturer's soldering and assembly recommendations.
推荐
推荐产品汇总
工程参考数据： STL60N3LLH5 ——对比、设计指导和合规信息。
选型指南
与替代料对比
| 参数 | 本产品 | STL60NH3LL | STL65N3LLH5 | STB70NF3LLT4 | STSJ50NH3LL |
|---|---|---|---|---|---|
| Brand | STMicroelectronics | STMicroelectronics | STMicroelectronics | STMicroelectronics | Infineon Technologies |
| Package | PowerFLAT 5x6 mm | PowerFLAT 5x6 mm - package identity requires confirmation | PowerFLAT 5x6 mm - package identity requires confirmation | PowerFLAT 5x6 mm - package identity requires confirmation | PowerFLAT 5x6 mm - package identity requires confirmation |
关键差异点
- Verified low on-state resistance （对比 STL60NH3LL)
- Compact 5x6 mm PowerFLAT construction （对比 STSJ50NH3LL)
- STripFET V technology positioning （对比 STSJ50NH3LL)
设计说明
Estimated conduction loss is P = I² × RDS(on) × duty cycle using the verified 0.0063 ohm RDS(on). At 10 A and 50% duty cycle, the calculated loss is approximately 3.15 W; this is an estimate, not a datasheet figure. Confirm the actual RDS(on) test condition, junction-temperature derating, package thermal resistance, and PCB copper area before using the estimate for thermal sizing.
Use short and wide drain and source copper paths to reduce parasitic resistance and inductance. Place the gate resistor and gate-driver return close to the MOSFET, and use a local return path that avoids sharing high-current source paths with sensitive control circuitry. The exact exposed-pad and land-pattern dimensions must be taken from the official STMicroelectronics package drawing.
Do not interpret the 30 V rating as permission to operate at 30 V without transient margin. Check inductive ringing, gate-driver overshoot, body-diode reverse recovery, startup overshoot, and the SOA at the intended current and duty cycle. Also verify that the selected driver can charge and discharge the actual gate charge without violating driver current or timing requirements.
合规信息
The verified excerpts identify the manufacturer, device technology, electrical headline ratings, package class, and distributor listings but do not explicitly state RoHS, REACH, AEC-Q100, lead-free, halogen-free, or conflict-minerals status. These fields remain unknown rather than being inferred.
